• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.145-151
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• 2006

The molecular assembly of p-iodo-phenyl octadecyl ether (I-POE), p-iodo-phenyl docosyl ether (I-PDE) and a binary mixture of these two molecules on graphite has been studied using a scanning tunneling microscope. Each molecular system self-assembles on the graphite surface to form a stable monolayer with a head-to-tail configuration. For the binary system, the I-POE and I-PDE molecules do not mix on the surface, preferring instead to form isolated monolayer domains. Here, the I-POE molecules are preferentially adsorbed on the graphite surface, due to the effects of alkyl chain length and the functional group on the monolayer structure.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.512-517
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• 2006

A reliable linear translation system was constructed. The system has six piezo legs, attached to a main body, holding a hexagonal sapphire rod. The sapphire rod moves either forward or backward with the sequential motion of the piezo legs, driven by characteristic electric voltage waves. The translational system was tested in vertical direction. The speed of the sapphire rod was turned out to be constant during several mm travel. The slowest upward speed was measured to be ${\sim}1.7{\times}10^{-6}m/s$, yielding ${\sim}28.3nm/step$, while the slowest upward speed was ${\sim}3.7{\times}10^{-6}m/s$, with ${\sim}61.7nm/step$, due to gravitational force. The velocity increases linearly, as the amplitude of the voltage waves increases. The linear translation system will be used as a coarse approach part for a scanning tunneling microscope.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.7 s.94
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• pp.1731-1739
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• 1993

An application of Scanning Tunneling Microscopy(STM) is investigated for the measurement of 3-dimensional profiles of the macro-machined patterns of which critical dimensions lie in the range of submicrometers. Special emphasis of this investigation is given to extending the measuring ranges of STM upto the order of several micrometers while maintaining superb nanometer measuring resolution. This is accomplished by correcting hysteresis effects of piezoelectric actuators by using non-linear compensation models. Detailed aspects of design and control of a prototype measurement system are described with some actual measuring examples in which fine It patterns can successfully be traced with a resolution of 1 nanometer over a surface range of $4{\times}2$ micrometers.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.2
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• pp.29-33
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• 2002

Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.3
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• pp.111-119
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• 2006

The ultra-precision stage is demanded for some industrial fields such as semiconductor lithography, ultra-precision machining, and fabrication of nano structure. A new stage was developed for those applications in order to obtain nano meter resolution. This stage consists of symmetric double parallelogram mechanism using flexure hinges. The mechanical properties such as strength of the flexures and deformations along the applied force were analyzed using FEM. The stage is actuated by a piezoelectric actuator and its movement was measured by a ultra-precision linear encoder. In order to improve positioning performance, a PID controller was designed based on the identified second order transfer function. Experimental results showed that this stage could be positioned within below 5 nm resolution irrespective of hysteresis and creep by the controller.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.76-76
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• 2013

Scanning Tunneling Microscopy는 개인용컴퓨터가 보급되고, 저잡음 아날로그 칩들을 구할 수 있으며, 압전세라믹 기술이 발달하기 시작한 1981년 스위스 IBM Zurich 연구소에서 H. Rohrer와 G. Binnig 박사에 의하여 발명되었다. 이 발명 7~8년 이전 미국 표준연구원의 R. Young 박사도 비슷한 시도를 하였지만, 이 때는 제어할 수 있는 컴퓨터가 없었고, 조절 회로의 잡음 레벨도 컸으며, 역학적 진동도 커서 목적을 달성할 수 없었다. STM의 발명 후 32년이 지난 지금, 조절용 컴퓨터의 발전은 물론, 조절용 역되먹임 회로 또한 digital signal processor나 FPGA를 사용하는 형태로 변화하여 전기적 잡음도 현저히 감소하였다 [1,2]. 동시에 측정 에너지 해상도를 개선하기 위하여 세계적으로 여러 그룹이 장치를 1 K 이하에서 작동할 수 있게 제작하였고, 0.3 K에서 작동하는 상업용 제품도 등장하였다. 이 결과 에너지 해상도는 30 meV 에서 2~3 ${\mu}eV$ 감소하였고, 온도변화에 따른 측정 위치의 변화도 피할 수 있게 되었다. 터널링 검침의 화학적 성분을 흡착과 같은 방법으로 조절하여, 공간 해상도는 물론 에너지 해상도도 더욱 줄일 수 있게 되었고, 스핀에 민감한 터널링 제어도 가능하게 되었다. 이제는 금속, 반도체, 초전도체는 물론 분자, 거대분자, 나노 크기의 양자점등도 측정이 가능하게 되었다. 분자진동 측정이 가능하며, 분자의 성분 분석이 가능하게 되었고, 스핀의 전도와 관련된 제반 문제들을 연구할 수 있게 되었다. 지금부터 10년 동안에는 포논의 측정과 전자와 포논 exciton 등이 관여된 다체계 현상, 이들의 동역학적 현상이 측정 가능하게 되었다. 핵자기 공명도 시도되고 있으며 화학적 구명 및 원자들 사이의 결합도 측정 가능하게 될 것이다. 이제 STM은 초고 진공에서 작동하는 Atomic Force Microscopy와 함께 지금까지 고체물리학 실험 장치가 만들어 내지 못하던 새로운 결과를 도출해 낼 것으로 기대한다.

• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.339-343
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• 2006

전기발광소자는 바이폴라소자로서 전자와 정공의 주입, 이동 및 재결합에 의하여 발광한다. 소자에 사용되는 발광층의 대표 물질인 $Alq_3$를 한층(single layer)만 사용하고 정공의 주입을 도와주기위하여 폴리테트라플로로에틸렌(테플론)층을 얇게 증착하여 두께 변화에 따른 소자의 전기적 발광 특성을 측정하였다. 테플론은 좋은 부도체 폴리머로서 정공 터널링 전류가 두께 2 nm에서 가장 크게 증가하였으며 효율도 최대에 이르렀다. 주사전자현미경을 이용하여 실리콘 기판에 증착시킨 테플론 박막의 조직을 조사한 결과 두꺼워 질수록 라멜라(섬유조직)가 발달함을 알 수 있었다. 전자 주입을 도와주는 터널링층으로서 알루미늄산화막을 $Alq_3$ 위에 3 ${\AA}$ 증착한 결과 전류와 효율이 더 증가하였다.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.285-290
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• 2013

Epitaxial graphene on metal substrates provides excellent platforms to study its atomic and electronic structures, and can be grown either by surface segregation of carbon or by chemical vapor deposition. The growth behaviors of the two methods, however, have not been directly compared each other. Here, we studied domain structures of graphene grown by three different methods, surface segregation, post-annealing with adsorbed ethylene, and high-temperature dose of ethylene, using scanning tunneling microscopy. The first two methods resulted in graphene regions with areas of $100nm^2$, whereas the third method showed large area graphene (> $10^4nm^2$) with regular hexagonal Moire patterns, implying that high-temperature dose of ethylene is preferable for further studies on graphene such as additional growth of organic molecules.

• Journal of the Korean Chemical Society
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• v.63 no.5
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• pp.323-326
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• 2019

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.111-116
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• 2002

Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.