• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.257-264
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• 2007

In this paper, we have designed and fabricated a wide-band and high gain antenna which can integrate a standard of IEEE 802.1la$(5.15\sim5.25\;GHz,\;5.25\sim5.35\;GHz,\;5.725\sim5.825\;GHz)$. We inserted a parallel dual slot into a rectangular patch to have wide-band, and we offset an element of capacitance from the slot by using coaxial probe feeding method. We also designed a converter of $\lambda_g/4$ impedance with taper type line so that wide-band impedance can be matched easily. We finally designed structure with $2\times2$ array in order to improve the antenna gain, and the final fabricated antenna could have a good return loss(Return loss$\leq$-10 dB) and a high gain(over 13 dBi) at the range of $5.01\sim5.95\;GHz(B/W\doteqdot940\;MHz)$.

• Korean journal of communication and information
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• v.40
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• pp.192-220
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• 2007

This study explored the official memory of Korean War through the War Memorial. The object of this study was the War Memorial in Yong-san, Seoul. This study investigated the politics of how the War Memorial would appear and the official memory of what the War Memorial would communicate. In the process of foundation of the War Memorial one-sided decision was made by the President and the Army. The aim of the War Memorial is to educate next generation. Anti-communism is the most important ground for value judgement of exhibition. In this sense, the War Memorial concretize particular interpretations on Korean War. This is the official memory of Korean War made by the War Memorial.

• Corrosion Science and Technology
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• v.16 no.6
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• pp.317-327
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• 2017

The change in the oxidation behavior of three types of B-added ultrahigh strength martensitic steels containing Ti and Nb induced by applying constant cathodic current was investigated. In a 3% NaCl+0.3% $NH_4SCN$ solution, the overall polarization behavior of the three alloys was similar, and degradation of the oxide film was observed in the three alloys after applying constant cathodic current. A significant increase in the anodic current density was observed in the Nb-added alloy, while it was diminished in the Ti-added alloy. Both Ti and Nb alloying decreased the hydrogen overpotential by forming NbC and TiC particles. In addition, the thickest oxide film was formed on the Ti-added alloy, but the addition of Nb decreased the film thickness. Therefore, it was concluded that the remarkable increase in the anodic current density of Nb-added alloy induced by applying constant cathodic current density was attributed to the formation of the thinnest oxide film less protective to hydrogen absorption, and the addition of Ti effectively blocked the hydrogen absorption by forming TiC particles and a relatively thick oxide film.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.143-143
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• 2016

알루미늄 합금은 내구성과 내식성이 우수할 뿐만 아니라 다양한 표면개질을 통해 그 표면 특성을 더욱 향상시킬 수 있다. 특히 Al-Mg계 5083-H321 Al 합금의 경우 가공성 및 용접성이 우수하여 선체 재료로 널리 이용되는데, 이는 선체중량의 경량화가 가능하여 연료비 절감과 빠른 선속 등 다양한 이점을 지니기 때문이다. 그러나 선속의 고속화에 따라 선체에 가해지는 유체충격이 증가하고 정압 저하에 기인하여 캐비테이션-침식 손상이 증가할 뿐만 아니라 해수환경 특성 상염소이온의 존재로 부식이 가속화되는 등 침식 및 부식의 시너지효과로 손상은 크게 증가한다. 이에 대한 방지대책으로 다양한 표면개질 기법이 제안되고 있으나 강한 충격압이 동반된 캐비테이션 침식-부식 복합 손상 환경에서는 표면처리만으로는 불가능할 수 있다. 따라서 본 연구에서는 양극산화된 5083-H321을 대상으로 캐비테이션 환경 하에서 일정 전위를 인가하여 침식-부식 손상이 최소화되는 최적전위를 규명하고자 한다. 이를 위해 먼저 분극 실험을 통해 재료의 전기화학적 거동을 바탕으로 임의의 전위를 선정하고 해당 전위를 인가한 상태에서 캐비테이션 실험을 실시하였다. 이때 분극실험과 캐비테이션-전기화학 복합실험 모두 $25^{\circ}C$의 해수에서 실시하였으며, 전기화학적 분극실험은 유효면적이 $3.24cm^2$인 시편에 2 mV/s의 분극속도로 0 ~ -3 V 까지 인가하였고, Ag/AgCl 기준전극과 백금대극을 사용하였다. 캐비테이션-전기화학 복합 실험은 정전위를 인가한 상태에서 $30{\mu}m$의 진폭으로 20분간 실시하였으며, 혼팁과 시험편 사이의 거리는 1 mm로 일정하게 유지하였다. 실험 후 표면 손상의 정량적 분석을 위해 인가된 전위별 전류밀도를 비교하고, 무게감소량을 측정하였으며, 손상특성 분석을 위해 3D현미경과 주사전자현미경(SEM)을 통해 표면을 분석하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.917-922
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• 2010

In this paper, a new temperature-insensitive CMOS dual-mode current reference for low-voltage low-power mixed-mode circuits is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature(PTAT) current and a complementary to absolute temperature(CTAT) current. The temperature insensitivity was achieved by the mobility and the other which is inversely proportional to mobility. As the results, the temperature dependency of output currents was measured to be $0.38{\mu}A/^{\circ}C$ and $0.39{\mu}A/^{\circ}C$, respectively. And also, the power dissipation is 0.84mW on 2V voltage supply. These results are verified by the $0.18{\mu}m$ n-well CMOS parameter.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.9
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• pp.1867-1879
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• 1997

DREAM-S is a distributed main-memory database system for the real-time processing of shared operational datra in ATM switching systems. DREAM-S has a client-server architecture in which only the server has the diskstorage, and provides the T-Tree index structure for efficient accesses to the data. We propose a recovery technique for the T-Tree index structre in DREAM-S. Although main-memory database system offer efficient access performance, the database int he main-memory may be broken when system failure such as database transaction failure or power failure occurs. Therfore, a recovery technique that recovers the database (including index structures) is essential for fault tolerant ATM switching systems. Proposed recovery technique relieves the bottleneck of the server processors disk operations by maintaining the T-Tree index structure only in the main-memory. In addition, fast recovery is guaranteed even in large number of client systems since the T-Tree index structure(s) in each system can be recovered cncurrently.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.6
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• pp.25-29
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• 2017

This paper presents a hetero-integration of electrostatically actuated RF MEMS Switch and step up DC-DC converter on a redistribution layer using commercial PCB process. RF characteristics of Duroid with $56{\Omega}$ impedance GCPW transmission line and that of FR4 with $59{\Omega}$ impedance CPW transmission line were analyzed. From DC to 6GHz, RF characteristics of Duroid were better than that of FR4, insertion loss was 2.08dB lower, return loss was 3.91dB higher, and isolation was 3.33dB higher.

• Journal of Convergence for Information Technology
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• v.7 no.6
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• pp.201-207
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• 2017

Failure of the power apparatus causes many inconveniences and problems due to power outage in all places using power such as industry and home. The main causes of faults in the Power Apparatus are aging, natural disasters such as typhoons and earthquakes, and animals. At present, the long high temperature status is monitored only by the assumption that a fault occurs when the temperature of the power apparatus becomes higher. Therefore, it is difficult to cope with the failure of the power apparatus at the right time. In this paper, we propose a power apparatus monitoring system as an efficient countermeasure against general faults except for faults caused by sudden natural disasters. The proposed monitoring system monitors the power apparatus in real time by attaching a thermal sensor, collects the monitored data, and predicts the failure using the accumulated information through learning using the artificial neural network. Through the learning and experimentation of artificial neural network, it is shown that the proposed method is efficient.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.71-79
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• 2015

This paper proposes a new touch screen sensing method that improves the drawback of conventional single-line sensing methods for mutual capacitance touch screen panels (TSPs). It introduces a dual sensing and voltage shifting method, which reduces the ambient noise effectively and enhances the touch signal strength. The dual sensing scheme reduces the detection time by doubling the integration speed using both edges of excitation pulse signals. The voltage shifting method enhances the signal-to-noise ratio (SNR) by increasing the voltage range of integrations, and maximizing the ADC's input dynamic range. Simulation and experimental results using a commercial 23" large touch screen show an SNR performance of 43dB and a scan rate 2 times faster than conventional schemes - key properties suited for a large touch screen panels. We implemented the proposed method into a TSP controller chip using Magnachip's CMOS 0.18um process.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.123-129
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• 2016

In this paper, results of produced PCU(Power Control Unit) prototype was showed by suggesting and maintaining optimal operation status which let the three functional modules automatically operate with its necessity by prioritizing operation process. In order to validate effectiveness of the suggested method, we produced a test PCU and examined the results. PCU consists of S3R(Sequential Switching Shunt Regulator), BCR(Battery Charge Regulator), and BDR(Battery Discharge Regulator): converting photovoltaic power into constant voltage at linked bus voltage; storing dump power in the battery which is an auxiliary energy storage device; and supplying power charged in battery to the load. To maintain its high reliability and optimal condition of these three power conversion modules, each module operates in parallel and stable bus voltage is required to be retained at all-time due to the nature of power supply for satellite.