• Management & Information Systems Review
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• v.36 no.1
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• pp.291-307
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• 2017

This study analyzes the effects of global diversification level on discretion accruals and firm value. In order to verify the hypothesis of this study, the sample of securities companies was selected from 2012 to 2015, and the final sample is 2,139 firm-year. The results of this paper are as follows : First, discretionary accruals increased as the diversification level increased. We conducted an additional analysis as to whether the increase in information asymmetry due to international diversification affects discretionary accruals. As a result, the increase of information asymmetry due to international diversification increased discretionary accruals. This analysis is consistent with EI Mehdi and Seboui(2001)'s study. Second, we analyze the impact of international diversification on corporate value. In previous studies, there was no consistent conclusion about the relationship between international diversification and firm value(Christophe and Pfeiffer, 2002; Denis and Vost, 2002; Bodnar and Wenintrop, 1997; Bodnar et al., 2003). Therefore, this study hypothesizes that the increase in discretionary accruals, which have been driven by international diversification, will have an impact on firm value. Aa a result of the analysis, we found that the increase in discretionary accruals due to diversification declines the firm value. This means that the increase in discretionary accruals due to diversification is utilized as and opportunistic means by taking individual gain of managers.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.9 no.6
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• pp.9-21
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• 2014

Source and use of investment money in the content business has been subject to closer attention, This study attempts to identify the information asymmetry problem in the performing art are, focusing on the Korean musical play. Despite the various discussions in the venture capital practice in the performing art area, there has been few studies analyzing the investors' perspective. While juggling with the 'artistic value' and 'rate of return', the investors are concerned about the 'transparency' of the performing art practice. When coupled with the subjective judgment of 'artistic value', the information asymmetry between the investor and the performing art manager becomes more delicate. In the performing art business, 'SPC(Special Purpose Company)' is considered a possible solution to organize the deal structure in this field. This study analyzes the role of SPC regarding the information asymmetry problem.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.3827-3833
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• 2011

This paper performed empirical tests of the validity of the pecking order theory which explains financing behavior of firms under information asymmetry. The results of regression analyses using the data of listed manufacturing companies in the Korean Stock Market from 1981 to 2010 have shown strong evidences supporting the pecking order theory. Especially regression coefficients of change of debt on funds deficit and control variables were found to be almost (+1) with statistically significance, which is interpreted as being consistent with the pecking order theory. Same results were found when I performed regression analyses by dividing the sample period into pre-currency crisis period, currency crisis period and post-currency crisis period and using 2 regression models. Change of tangible asset were found to function as collateral rather than reducing information asymmetry and as the firm size decreased, use of debt increased and as profitability increased use of debt decreased, which are consistent with the pecking order theory.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.04a
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• pp.609-611
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• 2012

논문에서는 로우듀티사이클 환경을 고려하여 목적지까지 데이터 전송의 신뢰성뿐만 아니라 낮은 데이터 지연도 보장하는 DIGF (Delay Improvement Greedy Forwarding) 기법을 제안한다. 초기에 제안된 그리디 포워텅 기법들은 무선링크가 갖는 비신뢰성 및 비대칭성의 문제점을 해결하기 위해 데이터 전송 성공률과 에너지 효율을 높이는 기법이 제안되었다. 하지만 많은 그리디 포워텅 기법들은 노드들이 데이터를 송수신하기 위해 대기하고 있는 수신대기상태로 인한 많은 에너지 소모를 고려하지 않아 네트워크 라이프타임을 감소시킨다. 이러한 문제점을 해결하고자 제안기법인 DIGF는 무선링크의 비신뢰성과 비대칭성을 고려할 뿐만 아니라 로우듀티사이클 환경을 고려한다. 또한 로우듀티사이클 환경을 고려할 때 발생되는 높은 수면지연성 (Sleep latency) 을 해결하기 위한 알고리즘을 제안하여 낮은 전송지연과 신뢰성 있는 데이터 전송을 보장한다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1311-1316
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• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1399-1404
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• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Korea Society of Computer and Information
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• v.25 no.11
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• pp.89-95
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• 2020

In this paper, we present Beamforming (BF) Training (BFT) for asymmetric links in IEEE 802.11ay. IEEE 802.11ay introduced BFT for asymmetric links that aims to increase the BFT success probability for Station (STA) with insufficient link budget to communicate with an Access Point (AP). BFT for asymmetric links utilizes directional BFT allocation to avoid the usage of quasi-omni pattern at the AP side, and thus to increase STA's BFT success rate. However, there are no publicly available simulation tools supporting IEEE 802.11ay. For these reasons, we present in this paper an implementation of BFT for asymmetric links in ns-3 with its novel techniques such as Training RX (TRN-R) subfield and BFT allocation. We then evaluate by simulation the performance of BFT for asymmetric links.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.