• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.401-406
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• 2015

The change of subthreshold swing for channel length of asymmetric double gate(DG) MOSFET has been analyzed. The subthreshold swing is the important factor to determine digital chracteristics of transistor and is degraded with reduction of channel. The subthreshold swing for channel length of the DGMOSFET developed to solve this problem is investigated for channel thickness, oxide thickness, top and bottom gate voltage and doping concentration. Especially the subthreshold swing for asymmetric DGMOSFET to be able to be fabricated with different top and bottom gate structure is investigated in detail for bottom gate voltage and bottom oxide thickness. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. As a result, subthreshold swing is sensitively changed according to top and bottom gate voltage, channel doping concentration and channel dimension.

• Journal of Korea Society of Industrial Information Systems
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• v.26 no.5
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• pp.11-19
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• 2021

In this paper, we proposed an asymmetric multi-core processor scheduling scheme which is based on the mileage of each core. We considered a big-LITTLE multi-core processor structure, which consists of low power consuming LITTLE cores with general performance and high power consuming big cores with high performance. If a task needs to be processed, the processor decides a core type (big or LITTLE) to handle the task, and then investigate the core with the shortest mileage among unoccupied cores. Then assigns the task to the core. We developed a mileage-based balancing algorithm for asymmetric multi-core assignment and showed that the proposed scheduling scheme is more cost-effective compared to the traditional scheme from a management perspective. Simulation is also conducted for the purpose of performance evaluation of our proposed algorithm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.726-732
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• 2019

In this study, we proposed an asymmetric differential inductor to improve the linearity of differential power amplifiers. Considering the phase error between differential signals of the differential amplifier, the location of the center tap of the differential inductor was modified to minimize the error. As a result, the center tap was positioned asymmetrically inside the differential inductor. With the asymmetric differential inductor, the AM-to-AM and AM-to-PM distortions of the amplifier were suppressed. To confirm the feasibility of the inductor, we designed a 2.4 GHz differential CMOS PA for IEEE 802.11n WLAN applications with a 64-quadrature amplitude modulation (QAM), 9.6 dB peak-to-average power ratio (PAPR), and a bandwidth of 20 MHz. The designed power amplifier was fabricated using the 180-nm RF CMOS process. The measured maximum linear output power was 17 dBm, whereas EVM was 5%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.748-751
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.755-758
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend very differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.22 no.6
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• pp.1231-1242
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• 2012

Traitor tracing schemes deter traitors from sharing their private keys by tracing at least one of the subscribers who were implicated in the construction of a pirate decoder. In general, it is assumed that the system manager in the scheme generates and distributes the subscribers' private key. But if the system manager knows the subscribers' private keys, he cannot convince a third party of a certain subscriber's piracy. To solve this problem, the system manager should not know the whole parts of subscribers' private keys and this leads to researches of asymmetric schemes. Moreover for the purpose of enhancing subscribers' privacy, there were two proposals of introducing anonymity onto asymmetric traitor tracing schemes, but one of them turned out to be a failure. In this paper, we point out that the other proposal also has flaws. We consider how to introduce anonymity to traitor tracing schemes, as a result, we suggest a new framework which is practical. We also construct a scheme by using an anonymous credential system and an asymmetric traitor tracing scheme. We prove the security of our scheme and consider the typical applications.

• Information Systems Review
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• v.22 no.4
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• pp.59-74
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• 2020

This paper investigates the asymmetric effect of social sentimental on an individual stock price return. For this purpose, four companies such as POSCO, Korean Electricity, AMORE PACIFIC, KIA Motors are chosen from KOSPI listed companies in terms of dataperspective. The main estimation results are as follows: the positive opinions affect only the stock prices return of three companies while the negative opinions affect all of the companies. It shows that positive or negative texts give asymmetric effect on stock price return and the effect of negative opinions is bigger than that of positive opinions. The results imply that investors are more sensitive to the negatives since they have the tendency of loss aversion. Also, it indicates that subjective opinion on SNS can be used as the proxy for the investment sentiment.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2010.11a
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• pp.129-131
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• 2010

분산 비디오 부호화(distributed video coding)는 분산 소스 부호화의 대표적인 응용분야로서 부호화 복잡도가 부호화기에서 복호화기로 이동되어 저전력 부호화 환경에 매우 적합하다. 본 논문에서는 분산 비디오 부호화의 성능 향상에 있어 가장 중요한 보조 정보의 효과적인 생성 방법을 제안한다. 우선 보조 정보 생성을 위한 키 프레임들 간의 블록 움직임 추정에 있어 기존 방법들이 대체적으로 가정하고 있는 선형적인 움직임 이동에 따른 잘못된 예측을 해결하기 위해 두 장 이상의 키 프레임을 사용하여 블록 움직임을 추정한 후, 선형 회귀(linear regression)를 이용하여 보조 정보 상의 블록 움직임 궤적을 추정한다. 이때 움직임 추정을 위한 키 프레임 번호를 증가하며 선입선출(FIFO)형 버퍼에 저장 및 삭제하여 동일한 보조정보에 해당하는 여러 움직임 벡터 필드와, 기존의 선형적인 움직임이 가정된 움직임 벡터 필드를 동시에 생성한다. 다음으로 보간(interpolation)하려는 보조 정보 프레임 내의 임의의 블록에 가장 가깝게 통과하는 움직임 벡터 필드를 선택하여 해당하는 블록의 최종 움직임 벡터로 선택한다. 실험결과 제안하는 보조 정보 생성 방법은 기존의 방법과 비교했을 때 비대칭성 움직임 벡터 사용만으로 평균 PSNR이 0.216dB 만큼 증가하는 것을 확인할 수 있었다.

• Journal of the Korean Data and Information Science Society
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• v.24 no.6
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• pp.1263-1274
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• 2013

VaR (value at risk), which represents the expectation of the worst loss that may occur over a period of time within a given level of confidence, is currently used by various financial institutions for the purpose of risk management. In the majority of previous studies, the probability of return has been modeled with normal distribution. Recently Chen et al. (2010) measured VaR with asymmetric Laplacian distribution. However, it is difficult to estimate the mode, the skewness, and the degree of variance that determine the shape of an asymmetric Laplacian distribution with limited data in the real-world market. In this paper, we show that the VaR estimated with (symmetric) Laplacian distribution model provides more accuracy than those with normal distribution model or asymmetric Laplacian distribution model with real world stock market data and with various statistical measures.