• 주택과사람들
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• s.112
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• pp.38-39
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• 1999

• 발명특허
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• v.20 no.10 s.236
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• pp.56-59
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• 1995

• 가정의 벗
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• v.34 no.10 s.398
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• pp.18-18
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• 2001

• 아름다운작은공간 미소공
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• v.27
• /
• pp.26-28
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• 2002

• 대한한약
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• s.8
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• pp.50-71
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• 2004

• Food Industry
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• s.74
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• pp.20-21
• /
• 1984

• KOREAN POULTRY JOURNAL
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• s.15
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• pp.42-45
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• 1971

• Journal of the Korean Society of Food Science and Nutrition
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• v.39 no.7
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• pp.999-1004
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• 2010

This study was carried out to investigate the quality characteristics of ginseng Jung Kwa obtained by treatments with different sugars. Ginseng Jung Kwa was made with four different sugars (sucrose, glucose, honey and fructose). Chemical characteristic was measured by ginsenosides content and rheological characteristics were measured by rheometer and color meter. Total ginsenoside and Rf contents on Ginseng Jung Kwa by sucrose were highest at 10.0, and 7.82 mg/g, respectively. On ginseng Jung Kwa by fructose, total ginsenoside content was the lowest, and hardness and adhesiveness were the highest, and by honey, stiffness, cohesiveness, gumminess, chewiness, and springiness were the highest, and fracture force did not appear as a significant difference by treatment of different sugars. Coefficient of variance on ginseng Jung Kwa by honey was the highest. On ginseng Jung Kwa by sucrose, color (lightness, redness and yellowness) all were the highest. Browning on Jung Kwa by fructose was the greatest. Sensory evaluation preference analysis (color, taste, texture, flavor and overall acceptability) on ginseng Jung Kwa were determined by 50 panelists (30~50's age) using 5-point scale. On ginseng Jung Kwa by honey, texture and overall acceptability were the best. Ginseng Jung Kwa by fructose was very sticking and adhering, so preference by sensory evaluation was inferior to others.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.240-244
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• 2013

Although forward osmosis desalination technology has drawn substantial attention as a next-generation desalination method, the energy efficiency of its draw solution treatment process should be improved for its commercialization. When ammonium bicarbonate is used as the draw solute, the system consists of forward-osmosis membrane modules, draw solution separation and recovery processes. Mixed gases of ammonia and carbon dioxide generated during the draws solution separation, need to be recovered to re-concentrate ammonium bicarbonate solution, for continuous operation as well as for the economic feasibility. The diluted ammonium bicarbonate solution has been proposed as the absorbent for the draw solution regeneration. In this study, experiments are conducted to investigate performance and features of the absorption corresponding to absorbent concentration. It is concluded that ammonium bicarbonate solution can be used to recover the generated ammonia and carbon dioxide. The results will be applied to design and operation of pilot-scale forward-osmosis desalination system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.