• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1830-1832
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• 1999

고에너지 이온주입(1)에 기인한 격자 손상 발생 및 열처리에 따라 이들의 회복이 어느정도 가능한지에 대하여 측정 및 분석방법을 통하여 조사하였다. 그리고 본 실험에서는 이온주입시 형성되는 빈자리 결함(Vacancy defect)과 격자간 결함(interstitial defect)의 재결할(recombination)을 이용 점결합(point defect)를 감소 시킬 수 있는 effective RTA조건을 설정하여 well 특성을 개선하고자 하였다. 8inch p-type Si(100)기판에 pad oxide 100A을 형성한 후 NMOS 형성하기 위해 vtn${\sim}$p-well과 PMOS 형성을 위해 vtp$\sim$n-well을 이온주입 하였다. Mev damage anneal은 RTA(2)(Rapid Thermal Anneal)로 $1000\sim1150C$ 온도에서 $15\sim60$초간 spilt 하여 실험후 suprem-4 simulation data를 이용하여 실제 SIMS측정 분석결과를 비교하였으며 이온주입에 의해 발생된 격자손상이 열처리후 damage 정도를 알아보기 위해 T.W(Therma-Wave)을 이용하였으며 열처리후 면저항값은 4-point probe를 사용하였다. 이온주입후 열처리 전,후에 따른 불순물 분포를 SIMS(Secondary ion Mass Spectrometry)를 이용하여 살펴보았다. SIMS 결과로는 열처리 온도 및 시간의 증가에 따라서 dopant확산 및 활성화는 큰차이는 보이지 않고 오히려 감소하는 경향을 볼 수 있으며 또한 접합깊이와 농도가 약간 낮아지는 것을 볼 수 있었다. 결점(defect)을 감소시키기 위해서 diffusivity가 빠른 임계온도영역($1150^{\circ}C$-60sec)에서 RTA를 실시하여 dopant확산을 억제하고 점결점(point defect)의 재결합(recombination)을 이용하여 전위 (dislocation)밀도를 감소시켜 이온주입 Damage 및 면저항을 감소 시켰다. 이와 같은 특성을 process simulation(3)(silvaco)을 통하여 비교검토 하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.1-8
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• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Restorative Dentistry and Endodontics
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• v.36 no.3
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• pp.238-242
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• 2011

Objectives: Palatogingival groove is a developmental anomaly that starts near the cingulum of the tooth and runs down the cementoenamel junction in apical direction, terminating at various depths along the roots. While frequently associated with periodontal pockets and bone loss, pulpal necrosis of these teeth may precipitate a combined endodontic-periodontal lesion. This case presents a case of a lateral incisor anatomically complicated with palatogingival groove. Methods: Two patients with lesion associated with the palatogingival groove were chosen for this report. Palatogingival grooves were treated with different restoration materials with endodontic treatment. Conclusions: Maxillary lateral incisor with a palatogingival groove may occur the periodontal disease with pulpal involvement. Elimination of groove may facilitate the periodontal re-attachment and prevent the recurrence.

• Journal of the Korean Institute of Gas
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• v.17 no.1
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• pp.19-25
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• 2013

The joining methods of steel structures of gas facilities, bridges, ships etc. by welding are composed mostly of T-type or cruciform fillet welding and full penetration or partial penetration according to the uses and the shape of the structures. In this study, it was examined the characteristics of fatigue crack according to penetration depth in relation to material thickness in the cruciform fillet welded joints. From the results, it was investigated the safe design stresses within the range of infinite life. When the LOP length is long the range of infinite life is small with root failure and when the LOP length is short the range of infinite life is large with teo failure. For the specimen of material thickness, 20mm welded by 3 pass compared with 10mm, 15mm welded by 2 pass, the fatigue strength and the range of infinite life was more improved by increasing of notch toughness from formation of micro-ferrite acicular structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.702-705
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• 2011

Poly-Si wafers with resistivity of 1 [${\Omega}$-cm[ and thickness of 50 [${\mu}m$] were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 [cm/sec], minority carrier diffusion length in the base region 50 [${\mu}m$], front surface recombination velocity 100 [cm/sec], sheet resistivity of emitter layer 100 [${\Omega}/{\Box}$], BSF thickness 0.5 [${\mu}m$], doping concentration $5{\times}10^{19}\;cm^{-3}$. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19.8 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.6
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• pp.1460-1464
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• 2010

In the paper, the breakdown voltage of Trench D-MOSFET have been analyzed by using MircoTec. The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. A Trench MOSFET is the most preferred power device for high voltage power applications. The oxide thickness and doping concentration in Trench MOSFET determines breakdown voltage and extensively influences on high voltage. We have investigated the breakdown voltage characteristics according to variation of doping concentration from $10^{15}cm^{-3}$ to $10^{17}cm^{-3}$ in this study. We have also investigated the breakdown voltage characteristics according to variation of oxide thickness and junction depth.

• Biomedical Science Letters
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• v.3 no.1
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• pp.43-47
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• 1997

The authors presented the human Thelaziasis case in Korea, with the review of the literatures. The patient was 60-year-old farmer who had lived in Chunchoun since birth. He complained lacrimation and foreign body sensation of the left eye. Total 10 worms, appeared to be slender milky-white nematodes, were extracted from the left upper conjuctival sac by authors. Micrograph morphological features are as follows： Three male worms are 8.83∼9.32 mm in length, 0.24∼0.25 mm in width, 259∼263 cuticular striations per mm, and showing cloaca with spicules. seven female worms are 11.91∼12.77 mm in length, 0.25∼0.26 mm in width, 259∼289 cuticular striations per mm, and vulva opening locating anterior to esophago-intestinal junction. From the above findings, these nematodes were confirmed as Thelazia callipaeda Railliet and Henry, 1910.

• Journal of Welding and Joining
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• v.17 no.1
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• pp.133-144
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• 1999

To fine seam annealer capacity of through thickness seam annealing in terms of through thickness microstructure change with increased toughness and elongation leaving heat trace on it, high strength steel pipes of ERW with different thickness were tested in different seam annealing temperature measured on the outer surface of pipes. Annealing temperature and microstructure of the weld seam were changed through applied seam annealing condition. Toughness and tensile test with hardness and microstructure analysis were done on the annealed weld seam to fine its characteristics as a primary step and annealing characteristics according to different seam annealing condition. Through a study of annealed ERW weld seam characteristics and seam annealing technology, amount of electric power should apply in decreased manner to arranged inductors of annealer in the order of 1st, 2nd, 3rd, so on for proper seam annealing. For example of 15.4mm thick and 610mm outside diameter pipe, applied power for proper seam annealing is 600 -650kw at 1st inductor, 450 - 500kw at 2nd inductor, 200-250 kw at 3rd inductor of annealer during 10 - 12M/minute moving speed of pipe. Also, the penetration depth of heat trace along the thickness direction of weld during seam annealing can be estimated through the equation 17mm/kv$\times$voltage(kv) with the microstructure and hardness analysis of thick weld seam as well as study of seam annealing and comparison of cooling condition to CCT diagram of low carbon high strength steel. From this result, the difference between the technological applicability of full annealing condition based on phase diagram and full penetration of heat trace based on CCT diagram along the thickness of weld seam is discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.24-24
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• 2015

최근 생체재료의 개발이 눈부시게 발전되고 생체적합성이 우수한 표면을 요구함에 따라 생체재료의 표면처리에 대한 연구가 활발히 진행되고 있다. Laser Deposition법은 항공기 부품제조 분야에 주로 사용되고 있으며 최근에 오하이오 주립대 타이타늄합금연구센터를 중심으로 표면처리에 관한 연구가 주로 이루어졌다. 특히 이를 이용하여 치과재료의 표면처리에 응용을 시도하였다. 치과에서 응용될 수 있는 경우는 주로 임플란트는 부분 또는 완전 무치악 환자의 보철수복에 사용되는 보철물의 제작등에 사용될 수 있으며 이중에서도 특히 생체용 임플란트의 표면처리응용으로 임플란트와 조직간의 접합성을 개선하는 표면처리법으로 연구되었다. 임플란트의 성공과 실패는 물성적인 측면에서 임플란트의 형태, 표면거칠기 및 표면처리방법, 초기하중 등에 의하여 좌우되며 임플란트 재료에 작용하는 응력차폐는 생체적합성을 좌우하는 큰 요인이 되고 있다. 이를 위하여 저 탄성계수합금을 설계하지만 하중을 버티는 강도가 낮아지는 단점이 있어 레이저증착법을 이용하여 임플란트재료인 Ti6Al4V합금에 탄성계수가 낮은 Ta, Nb등을 코팅하는 방법을 통하여 이를 해결하고자하는 시도가 이루어지고 있다. 이 방법은 최근의 3D 프린팅의 원리가 되고 있다. 따라서 발표에서는 Laser Deposition방법을 이용하여 치의학분야에서 응용되고 있는 예를 강연하고 응용 가능 분야에 대하여 토론 하고자한다. 또한 펨토레이저를 이용하여 생체합금의 표면처리는 생체활성화를 더욱 증진시키며 이를 위하여 많은 연구 수행되고 있다. 본 발표에서는 매식용 합금 표면에 펨토레이저를 이용하여 텍스춰링하여 세포가 잘 성장 할 수 있는 크기의 조절함으로써 기존의 표면처리와는 다른 효과를 얻을 수 있는 장점을 알아본다. 펨토레이저를 이용하면 여러 가지 형태의 텍스춰링이 가능하며 원형, 사각형등등 자유자제로 형태의 묘사가 가능하고 깊이 또한 쉽게 조절할 수 있는 장점이 있다. 지금까지는 표면 개질에 사용되는 레이저는 주로 Nd:YAG 레이저의 파장을 반으로 줄인 녹색레이저 (${\lambda}=532nm$)를 사용하거나, 자외선파장영역의 레이저를 사용하는 경우가 일반적으로 가장 보편화되었다. 이를 이용하여 제조된 Ti합금에 펨토 초(10-15 second) 펄스폭 대역을 갖는 레이저를 이용하여 나노크기의 미세 요철을 표면에 형성한 후, 나노튜브를 형성하여 그 표면특성의 변화를 알아보고 펨토레이저가 의료분야에 적용되고 있는 예를 살펴보고자 한다.