• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.11-18
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• 2022

Recently, as flexible electronic device-related technologies have received worldwide attention, the development of wiring and bonding technologies using liquid metals is required in order to improve problems such as formability in the manufacturing process of flexible devices and performance and durability in the bending state. In response to these needs, various studies are being conducted to use gallium and gallium-based alloys (eutectic Ga-In and eutectic Ga-In-Sn, etc.) liquid metals, with low viscosity and excellent electrical conductivity without toxicity, as low-temperature bonding materials. In this paper, the latest research trends of low-temperature bonding technology using gallium and gallium-based alloys are summarized and introduced. These technologies are expected to become important base technologies for practical use in the fields of manufacturing flexible electronic devices and low-temperature bonding in microelectronic packages in the future.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.1-16
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• 2023

Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.27-31
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• 2009

In this paper, the polymer adhesive bonding technology using wafer-level technology was investigated and warpage results were analyzed. Si and glass wafer was bonded after adhesive polymer layer and dam pattern for uniform state was patterned on glass wafer. In this study, warpage result decreased as the low of bonding temperature of Si wafer, bonding pressure and height of adhesive bonding layer. The availability of adhesive polymer bonding was confirmed by TC, HTC, Humidity soak test after dicing. The result is that defect has not found without reference to warpage.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.55-60
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• 2020

The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.

• Proceedings of the KWS Conference
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• 1997.05a
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• pp.176-179
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• 1997

• Proceedings of the KWS Conference
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• 1995.10a
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• pp.30-33
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• 1995

• Journal of Welding and Joining
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• v.22 no.6
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• pp.10-13
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• 2004

• Journal of Welding and Joining
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• v.27 no.2
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• pp.7-12
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• 2009

• Proceedings of the KWS Conference
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• 1999.05a
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• pp.126-129
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• 1999

• Journal of Welding and Joining
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• v.20 no.5
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• pp.36-41
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• 2002