• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.73.1-76
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• 2000

The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment, development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature 25~10$0^{\circ}C$ and frequency 20~1[MHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.73-76
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• 2000

The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment,development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature 25∼100[$^{\circ}C$] and frequency 20∼ 1 [MHz]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.101-105
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• 2001

For high voltage XLPE power cables, semiconducting layers have been applied to prevent discharge at the interface between conductor and insulation, and/or insulation and external shielding layer. The semiconducting layers may be also effective to release electrical stress in the interface. The property of semiconducting layers are significantly related to the quality and reliability of power cables. Generally, these semiconducting layers are formed by extruding, the conductibility of the material is given by the carbon black mixed with base polymer. The life of power cables is depended on the smoothness of the interface between insulation and semiconducting layer. If the smoothness is no good, the life of power cables is shorter because the electrical stress and water tree is increased. The causes of no good smoothness are the void of the interface, the protrusions, the contaminants and impurities of the semiconducting layer. The selection and dispersion of the Carbon Black is the significant factor to determine the life of power cable in the manufacturing of semiconducting compound.

• Journal of Aerospace System Engineering
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• v.17 no.6
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• pp.35-45
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• 2023

In this paper, we analyze the influence of indirect lightning strikes based on the structure of shielded cables used in an aircraft and propose a cable structure to enhance shielding effectiveness. Cables in an aircraft account for the largest proportion among components and play a crucial role in connecting aircraft frames and electronic devices; thus, making them highly influential. In particular, indirect lightning strike noise can lead to malfunctions and cause damage in aircraft electronic equipment, making the utilization of shielded cables essential for mitigating damage caused by indirect lightning strike noise. We conducted an analysis of the impact of indirect lightning strikes on aircraft shielded cables considering factors, such as the presence of shielding layers, core, and insulation in the cable structure. Furthermore, we validated our findings through simulations and experiments by applying the internationally recognized standard for indirect lightning, RTCA DO-160G Sec. 22.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.200.1-200.1
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• 2015

Charge trap flash (CTF) 메모리 소자는 기존의 플로팅 게이트를 사용한 플래시 메모리 소자에 비해 쓰고 지우는 속도가 빠르고, 소비 전력이 적으며, 쓰고 지우는 동작에 의한 전계 스트레스에 잘 견뎌내는 장점을 가지고 있다. 그러나 CTF 메모리 소자에서도 메모리 셀의 크기가 작아짐에 따라 셀 사이의 간섭 효과를 무시할 수 없다. 인접 셀 간의 간섭현상은 측정 셀의 문턱전압을 예측할 수 없게 변화시켜 소자 동작의 신뢰성을 낮추고 성능을 저하시킨다. 본 논문에서는 셀 사이의 간섭을 줄이고 소자의 성능을 향상시키기 위해 charge trap 층에 금속 공간층을 삽입한 CTF메모리 소자의 전기적인 특성에 대해 연구하였다. 금속 공간층을 갖는 CTF 메모리 소자는 기존 CTF 메모리 소자의 트랩층 양 측면에 절연막과 금속 공간층을 증착시켜 게이트가 트랩층을 감싸는 구조를 갖는다. 인접 셀 사이에 발생하는 간섭 현상과 전계 분포를 분석하였다. 프로그램 동작 시CTF 메모리 소자 내에 형성되는 전계의 분포와 크기를 계산함으로 금속 공간층이 인접한 셀에서 형성된 전계를 차폐시켜 셀 간 간섭 현상을 최소화하는 것을 확인하였다. 이러한 결과는 인접 셀 간의 간섭현상을 최소화하면서 소자 동작의 신뢰성이 향상된 대용량 메모리 소자를 제작하는데 도움을 줄 수 있다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.6
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• pp.57-63
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• 2019

S-parameters were used to analyze the effect of the circuit according to the height of the EMI shield layers. Among the S-parameters, S11, S21, S22, and S31 were used as factors for determining the effect on the circuit function. Simulations were performed using shields made of Graphite and Ferrite, and the frequencies were run from 100 MHz to 1 GHz. As the height of the shield was increased, the value of S21 was getting closer to 0 dB. In addition, the SE value was confirmed to improve the shielding performance according to the thickness of the insulating layer only in a specific frequency band. Based on 800um with thickest silicon dioxide thickness, the FG structure averaged -1 dB in narrow frequency bands between 100 MHz and 300 MHz, showing better efficiency than GF with an average of -2 dB. Although GF structures do not show high efficiency, they exhibit average performance of -3 dB in frequency bands between 100 MHz and 1 GHz rather than FG structures that sway over a wide range. In other words, FG and GF structures have trade-off structures. Therefore, it should be noted that the appropriate structure is selected for use.

• Polymer(Korea)
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• v.24 no.2
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• pp.268-275
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• 2000

We investigated the effect of polymer sublayer on volumetric resistivity and tensile strength of carbon fiber (CF)/polyethylene composite films fabricated under high intensity electric fields. The dependence of volumetric resistivity and tensile strength of the films on the polymer sublayer thickness or mass part exhibited complex behavior according to CF content and CF layer density in the films. As the thickness of polymer sublayer increases, two groups of processes at thermo-mechanical forming stage would take effects in the properties of the films. The first group comprises the increase of polymer layer thickness having reduced CF content compared with central or upper part of the film and insufficient wetting of CF resulting in the loosened structure near upper film side. The second group, on the other hand, is the improvement of mobility of molten sublayer leading to better distribution of CF throughout the film thickness and the formation of more compact structure. The different degree of contribution of these two competing processes at varied CF content and CF layer density could explain complex dependence of the film properties on the polymer sublayer. These results are important to optimize the electrical and mechanical properties of highly conductive polymer films, which can be used as electromagnetic interference shielding materials.