• Journal of radiological science and technology
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• v.10 no.1
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• pp.75-83
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• 1987

The insulating oil used for X-ray tube housing were degraded by X-ray irrdiation, high temperature and high anode voltage for normal operation. This study was measured the conduction current-X-ray dose, heating degradation, time, temperature and electric field characteristics and the dependense of electrode materials and gap length in the X-ray irradiatied insulating oil under of D.C voltage. The obtained results can be summarized as following. 1. The conduction current of X-ray irradiated insulating oil is more about $2.5{\sim}3$ times as large as than that of non x-ray irradiated, and is become saturation phenomena after some degree. 2. The conduction current of many times heating x-ray irradiated insulating oil is more than that of a few times heating. 3. The higher temperature x-ray irradiated insulating oil is increased, the more conduction current, and that is increased about ten times as large as when it's temperatures is increased to $80^{\circ}C\;at\;30^{\circ}C$, twenty five times at $100^{\circ}C$. 4. The dependence of electrode materials is appeared at the low electric field, and the small gap length with Fe > Cu > Al. 5. The low electric field than 3000 v/cm is appeared Ohm's law region, and the high is become saturation region at the I-E characteristics. 6. The larger gap length is become, the more conduction current is increased at the same electric field.

• Polymer(Korea)
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• v.31 no.6
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• pp.526-531
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• 2007

This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of $1{\sim}2\;nm$ roughness can be prepared for both DGEBA and OG when the films were thick ($>\;1\;{\mu}$). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of $100\;V/100^{\circ}C$ was applied for $0{\sim}10000$ seconds indicating that the insulating properties of DGEBA and OG films were very reliable.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.73-82
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• 1989

We developed a photo-CVD equipment for the deposition of silicon based insulating materials. Silicon dioxide thin films were deposited at various process conditions especially low temperature range $50-250^{\circ}C$. Low pressure mercury lamp was used in the direct excitation of $SiH_4/N_2O$ mixture gas without mercury sensitization. AES and ESCA analysis showed that oxygen to silicon atomic ratio and binding state of Si-O bond was nearly 2.0 and $SiO_2$ type, respectively. The refractive indices were measured to be 1.39-1.44, indicating that films were in relatively low density.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.45-51
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• 2007

We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.29-35
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• 2004

Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

• Journal of Environmental Science International
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• v.5 no.5
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• pp.611-617
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• 1996

The effects of nutritional sources on growth of Pseudomonas sp. P2 were investigated in medium containing biphentyl as a carbon source. To determine characterization of Pseudomonas sp. P2, the incubation time was determined to 100 h of the log phase in the growth curve. The optimal compositions for the growth of Pseudomonas sp. P2 degrading polychlorinated biphenyls (PCBs) were 1000 mg/L $NH_4NO_3$, 1000mg/L KH_2PO_4$, 100mg/L MgSO_4$.$7H_2O$, 30mg/L $CaCl_2$.$2H_2O$, 200mg/L NaCl, and 10mg/L $FeSO_4$.$7H_2O$. Pseudomonas sp. P2 showed the degradability of 59.3%, 57.6%, 51.4%, and 48.7% at 500mg/L, 1000mg/L, 1500mg/L, and 2000mg/L of the PCBs within insulating oil after 100 h incubation under the optimum conditions, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1747-1752
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• 2012

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane (BTMSM) and oxygen mixed precursor by the chemical vapor deposition. The dielectric constant is measured by MIS(metal/insulator/Si) structure, but it could decrease the reliability because the uniformity is not assured. To research the dielectric constant of SiOC film, the range of low polarization was researched in SiOC film using the optical analysis and hardness, and then calculated the dielectric constant of SiOC film with amorphous structure of high degree. After annealing, the dielectric constant of SiOC film was decreased owing to the lowering of polarization, and FTIR spectra of the main bond was shifted to higher wave number. The main bond of 950~1200 cm-1 was composed of the Si-C and Si-O bonds. The intensity increases in Si-O bond infers the bonding strength became stronger than that of deposited film. Annealed SiOC film showed 2.06 in dielectric constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• Journal of the Earthquake Engineering Society of Korea
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• v.5 no.3
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• pp.19-27
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• 2001

In this seismic analyses of structures, it is well recognized that the effects of soil-structure interaction can not be ignored and seismic responses of a structure taking into account the stiffnesses of a foundation-soil system show the significant difference from those with a rigid base. However, current seismic analyses of apartment building structures were carried out with the rigid base ignoring the characteristics of the foundation and the properties of the underlying soil. In this study, seismic analyses of wall-slob type apartment buildings which have a particular structural type were carried out taking into account the soft soil layer comparing seismic response spectra of a flexible base with those of a rigid base and UBC-97. Low-rise or middle height wall-slab type apartment buildings built on the deep soft soil layer showed a rigid body motion with the reduced seismic responses due to the base isolation effect, indicating that it is considerably safe but uneconomical to utilize the design spectra of UB-97 for the seismic design of wall-slab type apartment buildings due to conservative design.