• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.1C
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• pp.34-37
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• 2012

The paper introduces the an necklace type UHF RFID tag for a live tree having high dielectric constant. When a general UHF RFID tag is used for the metal and the material with high dielectric constant, the electrical characteristics and impedance of antenna have been changed, and the tag is not recognized by an UHF RFID reader. The necklace type UHF RFID tag has been designed with consideration of the high dielectric constant of the tree material. The name tag for a live tree has been designed with the developed tag antenna. The performance of tag has been measured and the reading range is about 4~5m. The developed UHF RFID tag antenna can be applied to any high dielectric material for various industrial applications.

• Clinical and Experimental Pediatrics
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• v.49 no.8
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• pp.857-863
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• 2006

Purpose : To evaluate the immunogenicity of hepatitis B vaccine among very low birth weight infants(VLBWI) who were vaccinated at 0, 1, 6 months of chronological age and to determine the factors associated with antibody formations. Methods : A total of 243 VLBWI admitted to Seoul and Gangneung Asan Medical Center neonatal intensive care units from 1997 to 2004 were included. Of 243, 13 infants were born to HBs Ag positive mother. All infants were given DNA recombinant vaccine at 0, 1, and 6 months of chronological age. Infants born to HBs Ag positive mothers received hepatitis B immunoglobulin at birth and a total of 4 doses of vaccinations. An antibody level over 10 mIU/mL, tested at 3-4 months after last vaccination, was regarded as a positive seroconversion. Results : The seroconversion rates were 84.4 percent and 84.5 percent for VLBWI and extremely low birth weight infants(ELBWI), respectively. Of 28 seronegative infants who were given revaccinations, 60.7 percent seroconverted, resulting in 95.3 percent, 97.5 percent seroconversion rates for VLBWI and ELBWI, respectively. 76.9 percent of infants born to HBsAg positive mothers seroconverted and none became hepatitis B carriers. Factors such as gestational age, sex, various neonatal illness, and kinds of vaccinations did not influence the formation of the hepatits B antibody, however, the higher the weight at time of first vacciation yielded better seroconversion rate. Conclusion : Revaccination of seronegative VLBWI after 3 doses of hepatitis B vaccinaton is very effective. Therefore, testing the immune status after the hepatitis B vaccination, a practice not routinely done, is highly recommended.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.619-620
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• 2007

본 논문에서는 초고압 케이블용 중간접속재의 하나인 프리몰드형 직선접속재의 기본 설계를 바탕으로 당사에서 지난 2006년 네덜란드 KEMA에서 IEC 62067 규격에 맞는 접속재를 개발하여 신뢰성 인증을 받았다. 그 접속재에 저유전율을 갖는 실리콘 고무를 적용했을 때의 전계집중지역의 전계를 완화시키는 방안을 고안하였다. 프리몰드형 직선접속재의 소형화를 위해 고유전율 실리콘 고무와 저유전율 실리콘를 적용하였다. 실제 제품을 생산에 앞서 전계해석 시뮬레이션을 통해 프리몰드형 직선 접속재의 소형화 가능성을 예측해 본다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.140-141
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• 2007

반도체 소자의 공정에 있어서 device scaling으로 인한 고유전 게이트 산화막 (high-k dielectics thin film)의 공정 개발 확보 방안이 필요하다. 본 논문에서는 유도결합 플라즈마를 이용하여 고유전율 박막을 식각하였다. CF4, SF6 등의 가스에서 금속-F, 금속-S 결합의 낮은 휘발성으로 인하여 시료 표면에 잔류하여 낮은 식각률을 보이며 측벽 잔류물을 형성하였으며, HBr, Cl 기반 플라즈마에서 금속-Br, 금속-Cl 결합은 시료 표면으로부터 탈착이 용이하여 효과적인 식각이 이루어짐을 확인할 수 있었다.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.715-718
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• 2003

본 논문에서는 MOSFET source/drain 고체 확산 원으로써 도핑된 폴리 실리콘을 사용하였으며 확산 후 남은 폴리 실리콘은 elevated source/drain 역할을 하여 저항을 줄여 준다. 또한 제안 된 구조는 게이트 절연막 공정 이전에 확산 공정이 이루어 지기 때문에 후속 열처리에 취약한 고유전율 게이트 절연막 공정과 금속 게이트 공정에 적합한 공정으로 적합함을 보였다.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.355-357
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• 1995

Pt(80nm)/$SiO_2$(150nm)/Si 기판위에 $Ba_{0.7}Sr_{0.3}TiO_3$ 박막을 rf-magnetron Sputtering 방법을 이용하여 기판온도 590$^{\circ}C$에서 33nm 두께를 증착했을 때 비유전율은 268 이었다. 비유전율이 3.9인 $SiO_2$와 비교했을 때 유효 두께인 Tox는 0.45nm 이었다. 누설 전류 밀도는 1.5V 전압을 인가했을 때 $4.21\times10^{-7}A/cm^2$이었다.

• The Korea Swine Journal
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• v.16 no.2 s.174
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• pp.64-67
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• 1994

• The Korea Swine Journal
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• v.12 no.3 s.127
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• pp.68-71
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• 1990

• The Korea Swine Journal
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• v.13 no.6 s.142
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• pp.108-111
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• 1991

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.