• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.5
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• pp.955-960
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• 2007

In this paper, the deviation of tunneling current for gate voltage has been investigated in double gate MOSFET developed to decrease the short channel effects. In device scaled to nano units, the tunneling current is very important current factor and rapidly increases,compared with thermionic emission current according to device size scaled down. We consider the change of tunneling current according to gate voltage in this study. The potential distribution is derived to observe the change of tunneling current according to gate voltage, and the deviation of off-current is derived from the relation of potential distribution and tunneling probability. The derived current is compared with the termionic emission current, and the relation of effective gate voltage to decrease tunneling current is obtained.

• Journal of the Korean Geophysical Society
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• v.6 no.3
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• pp.179-188
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• 2003

The object of grounding of electrical facility is to protect human and machine damage from the power supply interruption high voltage by use of the accident current dissipating into the ground. Generally, it is not easy to make suitable ground design for inhomogeneous subsurface geology and the variability of accident current in magnitude and duration time. To make efficient ground, ground potential rise must be controlled in the way of overall lowering and evenness. This study shows the case of optimized ground design by use of subsurface resistivity structure from electrical soundings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.681-684
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

• The Journal of Engineering Research
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• v.2 no.1
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• pp.165-174
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• 1997

It is not possible to define the earth's interior because of it complicity. However, it can be interpreted directly and/ or indirectly. Geophysics is the subject of this study. To study the possibility of construction supervision by geophysical method, geophysical prospecting was performed and studied at the SamYang pumping well area in Cheju Island, where, although underground dam was constructed, the saline water invade the pumping well area. This study focuses on the construction supervision by electrical measurements. Two electric resistivity survey lines are installed in the pumping well site, and at each line electric survey was conducted at ebb and flow tides. To increase the data quality SP (self-potential) survey was also performed. As a result the geophysical exploration methods explained the defect of construction well, and It shows that geophysical probe can be a useful tool for the construction supervision.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.562-562
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• 2013

산소 플라즈마는 음이온을 발생시키는 음전성 플라즈마로서 감광제 세정이나 금속, 폴리실리콘 등의 식각을 위해 할로겐 가스와 혼합하여 반도체나 디스플레이 공정에 광범위하게 사용되고 있다. 산소 플라즈마는 아르곤 플라즈마와 그 특성이 상이하고, 다량의 음이온이 국부적으로 만들어지므로 음이온의 공간분포 진단이 중요하다. 본 연구에서는 평판형 부유형 탐침에 고조화파 분석법을 적용하여 양이온의 밀도를 구하고, 직류 차단 커패시터를 제거하여 접지전위에서 전자 전류 측정을 통하여 위치에 따른 전자의 상대적인 공간 분포를 얻었다. 이러한 방법으로 측정된 양이온과 전자의 공간 분포로부터 음이온의 공간 분포를 구할 수 있었다. 가스 압력, 산소 첨가량, 인가 전력 등 여러 조건에서 측정된 음이온의 분포는 이론적인 경향성과 유사함을 확인할 수 있었다.

• Journal of the Korean Electrochemical Society
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• v.12 no.4
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• pp.317-323
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• 2009

Theoretical calculations for the secondary current distributions for the electrode with a projection part in electroplating were performed. Two kinds of electrodes were considered. One is a electrode with the overall conducting surfaces(Case 1) and the other is an electrode in which only a projection part has a conducting surface(Case 2). The effects of applied potential, the ratio of ion exchange current to conductivity, $\xi$ and the aspect ratio on the current distribution were examined. The increase of applied current or the value of $\xi$ decreased the uniformity of current distribution. The small value of aspect ratio resulted the more uniform current distribution and Case 2 showed the better uniformity than Case 2. When this model was applied into an electrode with various projection parts, the local current distribution along the electrode surface were obtained successfully. In this case, the decrease of $\xi$ also increase the uniformity of current distribution as seen previously.

• 전기의세계
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• v.28 no.8
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• pp.51-56
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• 1979

MOSFET의 모델을 설정하여 여러 bias 조건하에서 연결방정식과 Poisson 방정식을 numerical method로 풀어 그 해로서 전자와 정공의 분포와 전위분포를 구하였으며 또한 그 결과를 종래의 analytic한 이론들과 비교하여 보다 정확하고 CAD(Computer Aided Design)에 적합한 모델을 제안하였다.

• Proceedings of the Korean Institute of Industrial Safety Conference
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• 2005.04a
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• pp.378-384
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.317-319
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• 1995

In this Study, The Electrostatic Coutour Distribution in Polymer Electret Acoustic Sensor is calcuated using Finite Element Method. As a result the Electrostatic Countour Distribution is visualized and the design modification could be processed.

• Proceedings of the Korean Institute of Industrial Safety Conference
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• 2005.10a
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• pp.234-240
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• 2005