• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.42 no.3
• /
• pp.1-6
• /
• 2005

The 24 channel meridian electric-potential measuring System consists of a main cpu module, bio-signal analog module, interface module, power module, personal computer. The graphic user interface program conveniently allows user to setup, calibrate, measure, store, and control the meridian electric-potential measuring system. This system and program will continually be evolved using a database of clinically correlated meridian electric-potential. A variety of system configurations gives it the ability to make a user-favorable environment for measuring.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
• /
• 2005.04a
• /
• pp.182-185
• /
• 2005

울산광산 내 지표수와 토양 중의 공극수에 함유되어 있는 비소의 오염현황을 파악하고, pH와 산화-환원 전위 값의 변화에 따른 자연저감 능력을 평가하였다. 유비철석을 비롯한 비소함유 광물은 높은 산화-환원 전위 값과 낮은 pH 조건에서 해리되며, 이후 지하수의 진화과정에서 pH가 상승함에 따라 주로 5가의 비소형태로 존재하게 된다. 울산광산지역 지하수의 비소농도는 Eh가 높은 비포화대와 포화대 지하수의 경계부에서 높은 경향을 나타내며, 포화대의 상부에서는 Eh가 비교적 일정하나 비소 농도는 다양한 분포양상을 보인다. 포화대 하부에서 비소의 함량은 매우 낮으며, Eh 감소에 따라 비소 함량이 비례적으로 감소한다. 반응경로 과정에서 비소농도는 Eh<-0.1(V)인 지하수 포화대에서 가장 낮으며, pH가 상대적으로 낮고 산화-환원 전위값이 높은 비포화대에서 증가되는 경향을 보인다. 풍화 반응 정도가 높은 광미와 토양에서 비소농도 높으나, 용출실험에서 비소가 기준치 이하로 용출되는 것은 풍화반응과 토양에 의한 비소의 자연저감이 진행되고 있음을 반영한다. RMB를 이용한 중금속 제거능력 평가 실내실험에서, 산성과 알칼리 조건 모두에서 제거율이 높은 것으로 나타났다. 인회석과 철산화물질로 구성된 RMB는 친환경적이고 2차 오염문제를 극복할 수 있는 물질로서, 비소의 자연저감 능력을 향상시킬 수 있는 정화처리제로 활용이 가능할 것으로 판단된다.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.4 no.4
• /
• pp.68-78
• /
• 1990

절연파괴의 원인이 되는 절연체중의 공간전하의 여러 특성을 정량적으로 측정하였다. 전극에서의 주입전하가 트랩되어 주로 공간전하를 형성하는 것을 확인하였다. TSSP측정법으로 컬렉팅 전위를 결정하고 바이어스의 시간, 전압, 온도에 따른 공간전하 변화량을 측정하여 공간적 분포의 깊이를 조사하였다. 그리고 정상상태에 있어서 모델과 해석과 시험 결과가 비교적 잘 일치함을 발견하였다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.10
• /
• pp.2217-2222
• /
• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e. projected range and standard projected deviation, The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model for the change of oxide thickness. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60 mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the relationship of subthreshold swing and oxide thickness have been analyzed according to the shape of doping distribution.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.8
• /
• pp.1925-1930
• /
• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Proceedings of the KIEE Conference
• /
• 1986.07a
• /
• pp.409-412
• /
• 1986

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.8
• /
• pp.1764-1770
• /
• 2011

In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device. The degradation of subthreshold swing(SS) known as SCEs has greatly influenced on application of digital devices, and has been analyzed for structural parameter and variation of channel doping profile in DGMOSFET. The analytical model of Poisson equation has been derived from nonuniform doping distribution for DGMOSFET. To verify potential and subthreshold swing model based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing for DGMOSFET has been analyzed using these models.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.10a
• /
• pp.858-860
• /
• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도에 대한 드레인 유도 장벽 감소 현상에 대하여 분석하고자한다. 드레인 유도 장벽 감소 현상은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑 농도뿐만이 아니라 상하단 산화막 두께, 하단 게이트 전압 등에 대하여 드레인 유도 장벽 감소 현상을 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 채널도핑 농도에 따라 큰 변화를 나타냈다. 단채널 효과 때문에 채널길이가 짧아지면 도핑농도에 따른 영향이 증가하였다. 도핑농도에 대한 드레인유도장벽감소 현상의 변화는 상하단 산화막 두께에 따라 큰 변화를 보였으며 산화막 두께가 증가할수록 도핑농도에 따른 변화가 증가하는 것을 알 수 있었다. 또한 하단게이트 전압은 그 크기에 따라 도핑농도의 영향이 변화하고 있다는 것을 알 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.5
• /
• pp.1196-1202
• /
• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.3
• /
• pp.579-584
• /
• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.