• Title/Summary/Keyword: 전위 밀도

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Nondestructive Evaluation Techniques on the Radiation Damage of Reactor Pressure Vessel Steel Due to Neutron Irradiation (중성자 조사에 따른 원자로 재료의 조사 손상 비파괴평가 기술)

  • Kim, Byoung-Chul;Chang, Kee-Ok;Choi, Sun-Pil;Lee, Sam-Lai
    • Journal of the Korean Society for Nondestructive Testing
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    • v.17 no.1
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    • pp.31-40
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    • 1997
  • 원자로 압력용기 재료의 중성자 조사 취화 문제는 원자력발전소의 안전성 및 수명 관리에 가장 중대 한 영향을 미친다. 재료의 조사 취화를 평가하기 위하여 수행하고 있는 충격 및 인장시험 같은 파괴적 시험 결과는 석출물 크기나 분포, 전위 밀도 등, 재료 자체의 조직학적 특성에 좌우되므로 한정된 시편을 이용한 평가에는 많은 불확실성이 존재하게 된다. 따라서 이와 같은 문제점을 해결하기 위하여 비파괴기술을 이용한 조사 취화 평가에 대한 많은 연구가 진행되고 있다. 현재 원자로 압력용기 재료의 조사 취화에 따른 미세 조직 변화를 분석하기 위하여 응용되고 있는 비파괴기술로는 전기, 자기, 전자기, 초음파 및 경도측정법 등이 있으나 비파괴피험 결과와 미세조직의 변화, 기계적 성질 및 취화 정도 등과의 상관 관계를 정립해야만 기존 파괴적 시험의 대체가 가능하게 된다. 따라서 현재까지 수행되고 있는 여러 비파괴기술을 이용한 조사 취화 평가 연구결과를 비교 분석하여 보다 실현 가능성 있는 비파괴기술을 검토하였다.

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A STUDY OF THE IONOSPHERIC ELECTRON MEASUREMENT ON THE MEDIUM-SIZED SCIENTIFIC ROCKET , KSR-II (중형과학로켓, KSR-II를 이용한 이온층 전자 밀도 및 온도 분포 측정에 관한 연구)

  • Lee, Jae-Jin;Kim, Jhoon;Lee, Soo-Jin;Min, Kyoung-Wook;Pyo, You-Surn;Cho, Gwang-Rae;Rhee, Hwang-Jae
    • Journal of Astronomy and Space Sciences
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    • v.15 no.2
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    • pp.401-415
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    • 1998
  • This paper reports the results obtained from the Langmuir probe (LP) and Electron Temperature Probe (ETP) experiments on the sounding rocket KSR-II (Korean Scientific Rocket - II) which was launched on Jun 11, 1998 at 10:00 KST from Tae-An peninsula (37$^{\circ}$ N, 126$^{\circ}$ E). The instruments successfully measured the electron density, electron temperature, and the floating potential at altitudes of 73km to 130km. While the electron temperature measurement is not easy in this region, since the temperature is very low and the contamination effect of the probe may give rise to a problem, we were able to obtain a reasonable electron temperature profile by employing two independent methods, the pulse modulated Langmuir Probe and Electron Temperature Probe. The preliminary results show that electron density increases sharply at about 90km, and forms a peak at 102km. The density profile is roughly consistent with IRI (International Reference Ionosphere)95-model or PIM (Parameterized Ionospheric Model) results except that the peak density appears at 110km in the model and model electron density is slightly lower than the observed one. Electron temperature obtained from ETP fluctuates between 200$^{\circ}$K and 700$^{\circ}$K, an effect presumably coming from the wakes developed by LP, and it tends to increase with the altitude, which is consistent with the LP results.

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Suppression of misfit dislocations in heavily boron-doped silicon layers for micro-machining (마이크로 머시닝을 위한 고농도로 붕소가 도핑된 실리콘 층의 부정합 전위의 억제)

  • 이호준;김하수;한철희;김충기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.96-113
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    • 1996
  • It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

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The Study on the Corrosion Characteristics of Cr Plating in Marine Environment (해양환경 중에서 Cr도금의 부식 특성에 관한 연구)

  • 임우조;곽남인;윤병두
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.39 no.3
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    • pp.211-217
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    • 2003
  • Recently, with rapid development in marine and shipbuilding industries such as marine structures, ships and chemical plants for ship, there occurs much interest in the study on corrosion characteristics played an important role in mechanical design. This paper was studies on the corrosion characteristics of chromium plating in the marine environment. Under the various specific resistance, the electrochemical polarization test of chromium plating was carried out. And thus corrosion potential, polarization resistance, corrosion current density, control efficiency of corrosion and polarization control behavior of chromium plating are investigated. The main results are as the followed : 1. The polarization resistance of Cr plating and Ni become higher than that of base metal, also and these material become low with decrease of the specific resistance. 2. As the specific resistance decreases, the corrosion current density of Cr and Ni plating is lower than that of base metal. 3. The corrosion reaction of Cr plating, Ni plating and base metal vs. specific resistance is cathodic control.

Modeling of Carbon Plume in PLAD Method Assisted by Ar Plasmas (Ar 플라즈마 상태에서 PLAD법에 의한 탄소 입자의 운동 모델링)

  • So, Soon-Youl;Lim, Jang-Seob
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.4
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    • pp.24-31
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    • 2005
  • A plused laser ablation deposition(PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore this paper was focused on the understanding of plume motion in laser ablation assisted by hi plasmas at 100[mTorr]. One-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom(C), $ion(C^+)$ and electron were considered in the calculation of particle method. It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field(E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active. The energies of plume particles were investigated on a substrate surface. In addition the plume motion in Ar gas was also calculated and discussed.

유도 결합 플라즈마 스퍼터 승화법을 이용한 CrN 박막의 반응성 증착에서 질소 분압에 따른 박막 특성

  • Yu, Yeong-Gun;Choe, Ji-Seong;Ju, Jeong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.566-566
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    • 2013
  • 종래의 흑연 위주 연료전지 분리판에서 최근 고분자 전해질 막 연료전지가 높은 전력, 낮은 작동 온도로 자동차 산업에서 상당한 주목을 받고 있다. 분리판의 기술적 요구사항은 높은 전기 전도도, 높은 내식성, 가스 밀봉성, 경량성, 가공성, 저비용 등이다. 후보 물질로는 전기 전도성을 갖는 질화물계가 고려되고 있다. 기판으로는 스테인레스강이 가장 유력하며 Fe에 첨가된 Ni, Cr이 존재하므로 Cr 또는 CrN를 박막의 형태로 전자빔 증발법, 마그네트론 스퍼터링법으로 고속 증착하려는 시도가 있었다. 본 연구에서는, 스테인리스 강박(0.1 mm 이하)에 보호막으로 CrN을 선택하고 고속, 고품질증착을 위해서 새로운 방법인 스퍼터 승화법을 개발하였다. 박막의 품질을 개선할 수 있는 고밀도 유도 결합 플라즈마 영역 내에 Cr 소스를 직류 바이어스 함으로써 가열 및 스퍼터링이 일어나도록 하였다. 5 mTorr의 Ar 유도 결합 플라즈마를 2.4 MHz, 500 W로 유지하면서 직류 바이어스 전력을 30 W (900 V, 0.02 A) 인가하고, $N_2$의 유량을 0.5, 1.0, 1.5 SCCM로 변화를 주어 반응성 증착 공정의 결과로 얻어지는 CrN 박막의 특성을 분석하였다. N2의 유량이 증가할수록 $Cr_2N$이 감소하고, CrN이 증가하는 것을 확인하였다. 또한 부식성과 접촉저항을 측정하였다. 부식 전위는 N20 SCCM 보다 모두 상승하는 것을 확인하였고, $N_21$ SCCM에서 부식 전류 밀도가 2.097E-6 (at 0.6V) $A/cm^2$로 나타났다. 접촉저항 에서는 시료 당 3군데(top, center, bottom)를 측정하였다. 전기전도도 측면에서 가장 좋은 결과는 $N_21$ SCCM 일 때 $28.8m{\Omega}{\cdot}cm^2$의 접촉저항을 갖는 경우였다. 미국 에너지성의 기준은 부식 전류밀도 1.E-6 $A/cm^2$이하, 접촉 저항 $0.02{\Omega}m^2$이므로 매우 근접한 결과를 보이고 있다.

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Two-Dimensional Analysis of the Characteristics at Heterojunction of MODFET Using FDM (유한 차분법을 이용한 MODFET의 이차원적 해석)

  • Jung, Hak-Gi;Lee, Moon-Key;Kim, Bong-Ryul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1373-1379
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    • 1988
  • This paper describes a two-dimensional analysis of the potential distribution and electron concentration of the MODFET at channel using FDM. More exact analysis can be obtained by two-dimensional analysis which considers parasitic effects ignored in one-dimensional analysis. Using Poisson and Shrodinger equations, the potential distribution and the wave function are calculated within a constant error bound. As a result, the relations between the thickness of spacer, doping concentration of (n) AlGaAs layer, and the sheet density of the 2DEG (2 Dimensional Electron Gas) of MODFET at channel are suggested quantitively. The sheet density of the 2DEG is increased as the thickness of the spacer is decreased of the doping concentration of the (n)AlGaAs layer is lowered.

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Quantitative Analysis on Near Band Edge Images in GaAs Wafer (GaAs 웨이퍼의 대역단 영상에 대한 정량적 해석)

  • Kang, Seong-jun;Na, Cheolhun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.861-868
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    • 2017
  • Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.

Electrode properties of various carbon anodes containing different sizes and distributions of pores (다양한 기공 크기 및 분포를 갖는 양극 탄소의 전극 특성)

  • 안홍주;오한준;김인기;김세경;임창성;지충수;이재봉;박광규;고영신
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.1
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    • pp.42-49
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    • 2002
  • Differences in electrode properties and in fluorine electrolysis behaviors of various carbon anodes, which were the YBD-like grade carbon, the YBD grade carbon and the P2X grade carbon, containing different pore sizes and distributions were investigated. The evaluations were performed by measuring their mechanical properties, cyclic voltammograms and chronoamperometries in 0.5 M $K_2SO_4$ solution with 1 mM $[[Fe(CN)_6]^\;{3-}/Fe(CN)_6$] $^{4-}$ redox couple and electrochemical behaviours of fluorine electrolysis in molten KF . 2HF electrolyte at $85^{\circ}C$. It was found that the P2X grade carbon anode showed better electrode properties in the cyclic voltammogram and chronoamperometry than the other carbon anodes while the YBD-like grade carbon anode which contained the pore size of 200~300$\mu$m showed superior electrode properties for fluorine electrolysis to the others. These differences in the electrode properties of various carbon anodes seemed to be owing to different sizes and distributions of pores on their surfaces.

Research on Changes in Short Circuit Current of C-Si Solar Cell by Charge Density Waves (전하밀도파 이론으로 결정질 태양전지의 입사각에 따른 단락전류밀도 변화 연구)

  • Seo, Il Won;Koo, Je Huan;Yun, Myoung Soo;Jo, Tae Hoon;Lee, Won Young;Cho, Guang Sup;Kwon, Gi Chung
    • Journal of the Korean Vacuum Society
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    • v.22 no.4
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    • pp.218-224
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    • 2013
  • We measure solar currents transformed from quantum efficiency as a function of incident angles of solar lights. According to conventional models for solar cells, solar currents can be induced when electrons are separated into electrons and holes in the presence of incident solar lights. On the contrary, solar currents can be possible at the time when pinned charge density waves go beyond the pinning potential barrier under the influence of incident solar beams suggested by some authors. In this experiment, measured solar currents and our theory are in good correspondence to confirm the angle dependence of solar lights.