• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2747-2753
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• 2011

In this paper, a PWM current-mode DC-DC boost converter for mobile phone flash application has been proposed. The converter which is operated with 5 Mhz high switching frequency is capable of reducing mounting area of passive devices such as inductor and capacitor, consequently is suitable for compact mobile phones. This boost converter consists of a power stage and a control block. Circuit elements of the power stage are inductor, output capacitor, MOS transistors and feedback resistors. Meanwhile, the control block consists of pulse width modulator, error amplifier, oscillator etc. Proposed boost converter has been designed and verified in a $0.5\;{\mu}m$ 1-poly 2-metal CMOS process technology. Simulation results show that the output voltage is 4.26 V in 3.7 V input voltage, output current 100 mA which is larger than 25 ~ 50 mA in conventional 500 Khz driven converter when the duty ratio is 0.15.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.83-89
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• 2006

This paper describes the design of I/Q channel 12bit Digital-to-Analog Converter(DAC) which shows the conversion rate of 120MHz and the power supply of 3.3V with 0.35um CMOS n-well 1-poly 4-metal process for advanced wireless transceiver. The proposed DAC utilizes 4-bit thermometer decoder with 3 stages for minimum glitch energy and linearity error. Also, using a optimized 4bit thermometer decoder for the decrement of the chip area. Integral nonlinearity(INL) of ${\pm}1.6LSB$ and differential nonlinearity(DNL) of ${\pm}1.3LSB$ have been measured. In single tone test, the ENOB of the proposed 12bit DAC is 10.5bit and SFDR of 73dB(@ Fs=120MHz, Fin=1MHz) is measured, respectively. Dual-tone test SFDR is 61 dB (@ Fs=100MHz, Fin=1.5MHz, 2MHz). Glitch energy of 31 pV.s is measured. The converter consumes a total of 105mW from 3.3-V power supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.58-68
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• 2006

This work proposes a 10b 250MS/s $1.8mm^2$ 85mW 0.13um CMOS A/D Converter (ADC) for high-performance integrated systems such as next-generation DTV and WLAN simultaneously requiring low voltage, low power, and small area at high speed. The proposed 3-stage pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The input SHA maintains 10b resolution with either gate-bootstrapped sampling switches or nominal CMOS sampling switches. The SHA and two MDACs based on a conventional 2-stage amplifier employ optimized trans-conductance ratios of two amplifier stages to achieve the required DC gain, bandwidth, and phase margin. The proposed signal insensitive 3-D fully symmetric capacitor layout reduces the device mismatch of two MDACs. The low-noise on-chip current and voltage references can choose optional off-chip voltage references. The prototype ADC is implemented in a 0.13um 1P8M CMOS process. The measured DNL and INL are within 0.24LSB and 0.35LSB while the ADC shows a maximum SNDR of 54dB and 48dB and a maximum SFDR of 67dB and 61dB at 200MS/s and 250MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 85mW at 250MS/s at a 1.2V supply.