• Title/Summary/Keyword: 전압 제어 발진기

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Design of a CMOS Frequency Synthesizer for FRS Band (UHF FRS 대역 CMOS PLL 주파수 합성기 설계)

  • Lee, Jeung-Jin;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.12
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    • pp.941-947
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    • 2017
  • This paper reports a fractional-N phase-locked-loop(PLL) frequency synthesizer that is implemented in a $0.35-{\mu}m$ standard CMOS process and generates a quadrature signal for an FRS terminal. The synthesizer consists of a voltage-controlled oscillator(VCO), a charge pump(CP), loop filter(LF), a phase frequency detector(PFD), and a frequency divider. The VCO has been designed with an LC resonant circuit to provide better phase noise and power characteristics, and the CP is designed to be able to adjust the pumping current according to the PFD output. The frequency divider has been designed by a 16-divider pre-scaler and fractional-N divider based on the third delta-sigma modulator($3^{rd}$ DSM). The LF is a third-order RC filter. The measured results show that the proposed device has a dynamic frequency range of 460~510 MHz and -3.86 dBm radio-frequency output power. The phase noise of the output signal is -94.8 dBc/Hz, and the lock-in time is $300{\mu}s$.

Dual-Mode Reference-less Clock Data Recovery Algorithm (이중 모드의 기준 클록을 사용하지 않는 클록 데이터 복원 회로 알고리즘)

  • Kwon, Ki-Won;Jin, Ja-Hoon;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.77-86
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    • 2016
  • This paper describes a dual-mode reference-less CDR(Clock Data Recovery) operating at full / half-rate and its operation algorithm. Proposed reference-less CDR consists of a frequency detector, a phase detector, a charge pump, a loop filter, a voltage controlled oscillator, and a digital block. The frequency and phase detectors operate at both full / half-rate for dual-mode operation and especially the frequency detector is capable of detecting the difference between data rate and clock frequency in the dead zone of general frequency detectors. Dual-mode reference-less CDR with the proposed algorithm can recover the data and clock within 1.2-1.3 us and operates reliably at both full-rate (2.7 Gb/s) and half-rate (5.4 Gb/s) with 0.5-UI input jitter.

An Integer-N PLL Frequency Synthesizer Design for The 900MHz UHF RFID Application (900MHz UHF대역 RFID 응용을 위한 Integer-N PLL주파수 합성기 설계)

  • Kim, Sin-Woong;Kim, Young-Sik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.4 no.4
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    • pp.247-252
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    • 2009
  • This paper presents an Integer-N phase-locked loop (PLL) frequency synthesizer using a novel prescaler based on a charge pump and clock triggering circuit. A quadrature VCO has been designed for the 900MHz UHF RFID application. In this circuit, a voltage-controlled oscillator(VCO), a novel Prescaler, phase frequency detector(PFD), charge pump(CP), and analog lock detector(ALD) have been integrated with 0.35-${\mu}m$CMOS process. The integer divider has been developed with a verilog-HDL module, and the PLL mixed mode simulation has been performed with Spectre-Verilog co-simulator. The sweep range of VCO is designed from 828 to 960 MHz and the VCO generates four phase quadrature signals. The simulation results show that the phase noise of VCO is -102dBc/Hz at 100 KHz offset frequency, and the maximum lock-in time is about 4us with 32MHz step change (from 896 to 928 MHz).

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A Study on the Development of Level Sensor using Frequency Modulated Continuous Wave (주파수 변조 연속파를 이용한 레벨 센서 개발에 관한 연구)

  • 박동국;한태경;박인용;윤천수
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2004.04a
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    • pp.299-303
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    • 2004
  • In this paper, it is presented a level sensor for measuring a level of the contents of cargo tank using frequency modulated continuous wave(FMCW). The frequency range is 10∼11 GHz, the radar cross section(RCS) of target is 0.8 ㎡ of metal plate. the experiment is performed in laboratory and open ground, the sweep time of the signal is 100 ms, the pyramidal horn antenna of about 20 dBi gain is used, and input power of antenna is about 5 dBm. the beat frequency according to the target moving to 40 m is measured. There is a good agreement between measured and calculated results. But the resolution of the FMCW radar is measured about 10 cm due to nonlinear of voltage controlled oscillator(VCO).

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Development of a FMCW Radar Using a Compensation Algorithm for VCO Nonlinearity (VCO 비선형 보상 알고리듬을 적용한 근거리 측정용 FMCW 레이더 개발)

  • Chun, Joong Chang;Lee, Hyun Soo;Sohn, Jong Yoon;Kim, Tae Soo
    • Journal of Korea Society of Industrial Information Systems
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    • v.19 no.1
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    • pp.25-30
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    • 2014
  • In this paper, we have implemented an FMCW radar for a near distance measurement. In the structure of the FMCW radar, it is a key problem to solve the VCO nonlinearity. In this work, we have adopted a VCO nonlinearity compensation algorithm using the spectrum correlation of beat signals. The radar experimented in this work uses an X-band(9.55~10.25GHz) microwave signal, and realizes precision of 3% in the range of 30m. The prototype can be applied to the front surveillance radar such as in vehicle anti-collision and probing robot mission.

A study on the design of a K-band harmonic oscillator using voltage controlled dielectric resonance (전압제어 유전체공진을 이용한 K-대역 발진기 설계에 관한 연구)

  • 전순익;김성철;은도현;차균현
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.12
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    • pp.3215-3226
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    • 1996
  • In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.

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Design of High Performance On -chip Voltage Controlled Oscillator Using GaAs MESFET (GaAs MESFET을 이용한 고성능 온-칩 전압 제어 발진기 설계)

  • 김재영;이범철;최종문;최우영;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.12
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    • pp.24-30
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    • 1996
  • In this paper, we designed a new type of high frequency on-chip voltage controlled oscillator (VCO) using GaAs MESFET, and their performances were comapred with those of the conventional VCO. Each VCO was designed with three-to-five ring oscillator and inverter, buffer and NOR gate were implemented by GaAs source coupled FET logic, which has better speed and noise performance compared to other GaAs MESFET logic. SPICE simulation showed that the gain of conventional and our new VCO was 1.24[GHz/V], 0.54[GHz/V], respectively. The frquency tuning range were 2.31 to 3.55 [GHz] for conventional VCO and 2.47 to 3.01[GHz] for our new design. This shows that the factor of two gain reductin was achieved without too much sacrifice in the oscillation frequency. For our new VCO, the average temperature index was -2[MHz/.deg. C] in the range of -20~85[.deg. C] the power supply noise index was 5[MHz/%] for 5.3[V].+-.10[%] and total power consumption was 60.58[mW].

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A 2.4 ㎓ Back-gate Tuned VCO with Digital/Analog Tuning Inputs (디지털/아날로그 입력을 통해 백게이트 튜닝을 이용한 2.4 ㎓ 전압 제어 발진기의 설계)

  • Oh, Beom-Seok;Hwang, Young-Seung;Chae, Yong-Doo;Lee, Dae-Hee;Jung, Wung
    • Proceedings of the IEEK Conference
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    • 2003.11c
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    • pp.32-36
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    • 2003
  • In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

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Design of Dual loop PLL with low noise characteristic (낮은 잡음 특성을 가지기 위해 이중 루프의 구조를 가지는 위상고정루프 구현)

  • Choi, Young-Shig;Ahn, Sung-Jin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.4
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    • pp.819-825
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    • 2016
  • In this paper, a phase locked loop structure with parallel dual loop which have a different bandwidth has been proposed. The bandwidths depending on transfer functions are obtained through dual loops. Two different bandwidths of each loop are used to suppress noise on the operating frequency range. The proposed phase locked loop has two different voltage controlled oscillator gains to control two different wide and narrow loop filters. Furthermore, it has the locking status indicator to achieve an accurate locking condition. The phase margin of $58.2^{\circ}$ for wide loop and $49.4^{\circ}$ for narrow loop is designed for stable operation and the phase margin of $45^{\circ}$ is maintained during both loops work together. It has been designed with a 1.8V 0.18um complementary metal oxide semiconductor (CMOS) process. The simulation results show that the proposed phase locked loop works stably and generates a target frequency.

A Design of PLL and Spread Spectrum Clock Generator for 2.7Gbps/1.62Gbps DisplayPort Transmitter (2.7Gbps/1.62Gbps DisplayPort 송신기용 PLL 및 확산대역 클록 발생기의 설계)

  • Kim, Young-Shin;Kim, Seong-Geun;Pu, Young-Gun;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.21-31
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    • 2010
  • This paper presents a design of PLL and SSCG for reducing the EMI effect at the electronic machinery and tools for DisplayPort application. This system is composed of the essential element of PLL and Charge-Pump2 and Reference Clock Divider to implement the SSCG operation. In this paper, 270MHz/162MHz dual-mode PLL that can provide 10-phase and 1.35GHz/810MHz PLL that can reduce the jitter are designed for 2.7Gbps/162Gbps DisplayPort application. The jitter can be reduced drastically by combining 270MHz/162MHz PLL with 2-stage 5 to 1 serializer and 1.35GHz PLL with 2 to 1 serializer. This paper propose the frequency divider topology which can share the divider between modes and guarantee the 50% duty ratio. And, the output current mismatch can be reduced by using the proposed charge-pump topology. It is implemented using 0.13 um CMOS process and die areas of 270MHz/162MHz PLL and 1.35GHz/810MHz PLL are $650um\;{\times}\;500um$ and $600um\;{\times}\;500um$, respectively. The VCO tuning range of 270 MHz/162 MHz PLL is 330 MHz and the phase noise is -114 dBc/Hz at 1 MHz offset. The measured SSCG down spread amplitude is 0.5% and modulation frequency is 31kHz. The total power consumption is 48mW.