• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.281-282
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• 2016

영구자석 동기전동기의 회전자 위치검출센서를 사용하지 않는 센서리스 제어를 위해서는 모터에 인가되는 전압과 전류를 정확하게 알아야 한다. 일반적으로 영구자석동기전동기 모델기반의 회전자 위치검출 관측기에 사용되는 전압은 전류제어기의 출력인 전압지령 값을 사용한다. 그러나 전압지령 값은 인버터에 사용되는 데드타임의 영향으로 인해 실제 모터에 인가되는 전압과 차이를 갖는다. 특히 고속운전 시 과변조 구간에서의 전압지령 값은 실제 모터에 인가되는 전압과 큰 오차를 갖게 된다. 데드타임에 의한 전압 오차는 회전자 위치검출 오차에 미치는 영향이 비교적 작게 나타나지만, 과변조 구간에서의 전압 오차는 회전자 위치검출 오차를 매우 크게 만들어 센서리스 제어를 불가능하게 만들 수 있다. 본 논문에서는 추가적인 전압검출회로를 사용하여 모터에 인가되는 3상 전압을 검출하여 회전자 위치검출 관측기에 적용함으로써 과변조 구간까지 센서리스 제어 범위를 확장하는 방법을 시뮬레이션을 통하여 타당성을 검증하였다.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.134-135
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• 2014

본 논문에서는 동적 전압 보상기를 위한 속응성을 향상시킨 입력 전압의 크기를 검출하는 기법을 제안한다. 동적 전압 보상기가 계통 전압에서 발생한 순시전압강하를 보상하기 위해서는 강하된 전압을 검출해야 한다. 외란에 강인하고 빠른 응답 특성을 가지는 재귀형 최소 자승법을 사용하여 입력 전압으로 부터 강하된 전압의 크기를 구하고 보상전압을 생성한다. 생성된 보상전압은 입력 전압에 더해져 안정된 부하전압을 공급한다. 시뮬레이션 결과를 통해 제안하는 방법의 타당성을 검증한다.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.395-400
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• 1998

3상 전원에서 1차측이 지락 되거나 단락이 되면 2차측 전압은 불평형이 된다. 본 논문에서는 직렬 보상형 순시 전압 보상기에서 불평형 전원의 정상성분에 대한 위상각을 검출하는 새로운 알고리듬을 제안한다. 그리고 왜란 관측자를 통해 부하전류를 추정하는 방법을 제안한다. 위상각의 순시 검출을 통해서 정상성분과 동일 위상의 기준 전압을 만듦으로써 순시 전압 보상기에서 출력해야 하는 전압의 크기를 최소화 하였다. 제안된 알고리즘의 성능을 시뮬레이션을 통해서 검등한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.560-565
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• 2002

In this paper, the output voltage of a photodetector is stabilized using a digital potentiometer, to reduce the voltage variation when the detector position deviates from the center of the signal beam. The capture distance is calculated, and stabilization performance is observed through experiments. This scheme is very useful to reduce the output voltage variations due to the small change of the optical signal power, beam direction, and the detector position.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.1-8
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• 2009

In this paper, a temperature variation-insensitive power-up detector for use in analog and digital integrated systems has been proposed. To provide temperature-insensitive characteristic, nMOS and pMOS voltage dividers in the proposed power-up detector are made to have zero temperature coefficient by exploiting the fact that the effective gate-source voltage of a MOS transistor can result in mutual compensation of mobility and threshold voltage for temperature independency. Comparison results using a 68-nm CMOS process indicate that the proposed power-up detector achieves as small as 4 mV voltage variation at 1.0 V power-up voltage over a temperature range of $-30^{\circ}C$ to $90^{\circ}C$, resulting in 92.6% reduction on power-up voltage variations over conventional power-up detectors.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.431-432
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• 2015

본 논문은 연구자석 동기발전기의 병렬운전을 위한 동기 스위치 전압 검출에 의한 동기기 병렬구동에 관한 연구이다. 동기 스위치 전압검출은 동기기가 병렬구동 시, 스위치의 양단의 전압을 검출하고, 전위차가 0[V]에 근접하게 되면 스위치를 ON시켜 계통과 연계를 위해 본 논문에서 제안하는 기법이다. 제안된 기법은 각 동기기의 동일한 한 상(phase)의 정보를 통하여 병렬구동이 가능하다는 장점이 있다. 따라서 본 논문에서는 제안된 기법에 대하여 시뮬레이션을 통하여 그 타당성을 검증한다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.239-243
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• 2003

In this paper, an angle diversity wireless optical detector is realized that can receive the optical signal at an angle from 0 to 360 degrees. Eight photodiodes constitute an angle diversity receiver, and in order to reduce the voltage variation with the incident angle, the optical detector is stabilized with a digital potentiometer. In a stabilized state, the voltage variation is kept within 1/10 of maximum voltage. This configuration is very useful in constructing an omni-directional receiver in a wireless optical interconnection.

• Journal of the Korean Society of Radiology
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• v.11 no.1
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• pp.27-35
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• 2017

The purpose of this study was to investigate the features of CsI:Tl and $Gd_2O_2S$ detectors with an indirect conversion method using phantom in the DR (digital radiography) system by obtaining images of thick chest phantom, medium thickness thigh phantom, and thin hand phantom and by analyzing the SNR and CNR. As a result of measuring the SNR and CNR according to the thickness change of the subject, the SNR and CNR were higher in CsI:Tl detector than in $Gd_2O_2S$ detector when the medium thickness thigh phantom and thin hand phantom were scanned. However, when the thick chest phantom was used, for the SNR at 80~125 kVp and the CNR at 80~110 kVp in the $Gd_2O_2S$ detector, the values were higher than those of CsI:Tl detector. The SNR and CNR both increased as the tube voltage increased. The SNR and CNR of CsI:Tl detector in the medium thickness thigh phantom increased at 40~50 kVp and decreased as the tube voltage increased. The SNR and CNR of $Gd_2O_2S$ detector increased at 40~60 kVp and decreased as the tube voltage increased. The SNR and CNR of CsI:Tl detctor in the thin hand phantom decreased at the low tube voltage and increased as the tube voltage increased, but they decreased again at 100~110 kVp, while the SNR and CNR of $Gd_2O_2S$ detector were found to decrease as the tube voltage increased. The MTF of CsI:Tl detector was 6.02~90.90% higher than that of $Gd_2O_2S$ detector at 0.5~3 lp/mm. The DQE of CsI:Tl detector was 66.67~233.33% higher than that of $Gd_2O_2S$ detector. In conclusion, although the values of CsI:Tl detector were higher than those of $Gd_2O_2S$ detector in the comparison of MTF and DQE, the cheaper $Gd_2O_2S$ detector had higher SNR and CNR than the expensive CsI:Tl detector at a certain tube voltage range in the thick check phantom. At chest X-ray, if the $Gd_2O_2S$ detector is used rather than the CsI:Tl detector, chest images with excellent quality can be obtained, which will be useful for examination. Moreover, price/performance should be considered when determining the detector type from the viewpoint of the user.

• Progress in Medical Physics
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• v.15 no.2
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• pp.105-111
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• 2004

The parallel plate detector with dielectric film for dosimetry was designed to measure detection characteristic of 6 MV X-ray with medical linear accelerator. PTFE film was inserted into FEP films that are made by two one-side metal coated materials for ion source. The thicknesses of PTFE dielectric film was 100 ${\mu}{\textrm}{m}$ and the thickness of FEP dielectric film was 100 ${\mu}{\textrm}{m}$, respectively. This detector was fixed by two acrylic plate for physical hardness ad geometrical consistency. The geometrical condition for measurement with parallel-plate for detector was below; SSD=100 cm and the 5 cm depth between detector and phantom surface The major parameter of detector characteristics such as zero drift current, leakage current, charge response by applied voltage, reproducibility, linearity, TMR measurement, dose rate effect were measured. The zero drift currents are 8.3 pA and leakage currents are 10 pA. The charge response of applied voltage is showing linearity in 414 voltage. The measurement deviation of reproducibility in this detector is within 1% for dose and the linearity of applied dose shows in this detector. The TMR curves in phantom between this parallel plate detector and reference detector are matched within 3% deviation from maximum dose depth to 7.5 cm depth. It is considered that this dosimetric system is satisfactory for the purpose of the constancy check of the 6 MV x-ray from medical linear accelerator.