• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.39-46
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• 2009

A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.56-65
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• 1997

In this paper, a design of current-mode continuous-time filters for low voltage and high frequency applictions using complementary bipolar current mirror paris is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integrtion. Since the design method of the proposed curent-mode filters is based on the integrator type of realization, it can be used for a wide range of applications. And the cutoff frequency of th efilters can be easily changed by the DC cntrolling current. As design examples, the 5th order butterworth filters are designed by cascade and leapfrog methods with tunable cutoff frequencies from 30MHz to 100MHz. The characteristics of the designed current mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.267-270
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• 2003

This paper proposes high performance $8{\times}8$ multiplier using current-mode quaternary logic technique. The multiplier is functionally partitioned into the following major sections: partial product generator block(binary-quaternary logic conversion), current-mode quaternary logic full-adder block, quaternary-binary logic conversion block. The proposed multiplier has 4.5ns of propagation delay and 6.1mW of power consumption. Also, this multiplier can easily adapted to binary system by the encoder, the decoder. This circuit is simulated under 0.35um standard CMOS technology, 5uA unit current, and 3.3V supply voltage using Hspice.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3614-3621
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• 2009

In this paper, A CMOS low-voltage current mode integrator is designed. The designed current-mode integrator is based on linear cascode circuit that is newly proposed in this paper. When it is compared with gain(43.7dB) and unity gain frequency(15.2MHz) of the typical current-mirror type current-mode integrator, the proposed linear cascode current-mode integrator achieves high current gain(47.8dB) and unity gain frequency(27.8MHz). And a 5th Chebyshev current-mode filter with 7.03MHz cutoff frequency is designed. The designed all circuits are simulated by HSPICE using 1.8V-$0.18{\mu}m$ CMOS technology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3638-3644
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• 2009

A CMOS multi-channel low-voltage current mode filter circuit is designed. The designed current-mode filter is based on linear cascode current-mode integrator that is newly proposed in this paper. When it is compared with that of the typical current-mirror type current-mode integrator, the proposed linear cascode current-mode integrator achieves high current gain and unity gain frequency. The designed filter is composed with 5th Chebyshev function and converted to active version by signal flow graph method. We verified that the designed filter can be applied to three-channel basedband, bluetooth, DECT and WCDMA with 0.51MHz~7.03MHz frequency tuning range by Hspice simulation using 1.8V-$0.18{\mu}m$ CMOS technology.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4745-4750
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• 2012

In this paper a $6^{th}$ 1MHz~30MHz bandpass filter for Power line communication(PLC) modem receiver is designed using current mode synthesis method which is good to design the low-voltage and low-power filter. The designed bandpass filter is composed of cascade connecting between $3^{rd}$ Butterworth highpass filter and $3^{rd}$ Chebychev lowpass filter. As a core circuit in the current-mode filter, a current-mode integrator is designed with new architecture which can improve gain and unity gain frequency of the integrator. The gain and the unity gain frequency of the designed integrator is each 32.2dB and 247MHz. And the cutoff frequency of the designed $6^{th}$ bandpass filter can be controlled to 50MHz from 200KHz according to controlling voltage and the power consumption is 2.85mW with supply voltage, 1.8V. The designed bandpass filter was verified using a $0.18{\mu}m$ CMOS parameter.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.4
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• pp.28-34
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• 2000

In this paper, a continuous-time filter for low voltage and high frequency applications using fully-balanced current integrators is presented. As the balanced structure of integrator circuits, the designed filter has improved noise characteristics and wide dynamic range since even-order harmonics are cancelled and the input signal range is doubled. Using complementary current mirrors, bias circuits are simplified and the cutoff frequency of filters can be controlled easily by a single DC bias current. As a design example, the 3rd-order lowpass Butterworth filter with a leapfrog realization is designed. The designed fully-balanced current-mode filter is simulated and examined by SPICE using 0.65${\mu}{\textrm}{m}$ CMOS n-well process parameters. The simulation results show 50MHz cutoff frequency, 69㏈ dynamic range with 1% total harmonic distortion(THD), and 4㎽ power dissipation with a 3V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.3
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• pp.191-200
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• 2002

In this paper, we present the method transforming the interval functions into the truncated difference functions for multi-variable multi-valued functions and implementing the truncated difference functions to the multiple valued logic circuits with uniform patterns using the current mirror circuits and the inhibit circuits by current-mode CMOS. Also, we apply the presented methods to the implementation of circuits for additive truth table of 2-variable 4-valued MOD(4) and multiplicative truth table of 2-variable 4-valued finite fields GF(4). These circuits are simulated under 2${\mu}{\textrm}{m}$ CMOS standard technology, 15$mutextrm{A}$ unit current, and 3.3V power supply voltage using PSpice. The simulation results have shown the satisfying current characteristics. Both implemented circuits using current-mode CMOS have the uniform Patterns and the regularity of interconnection. Also, it is expansible for the variables of multiple valued logic functions and are suitable for VLSI implementation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.6
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• pp.891-896
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• 2002

In this paper, a new voltage-controlled tunable integrator for low-voltage applications is proposed. The proposed active element is composed of the CMOS complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transcon-ductance is increased than that of the conventional element. And then these results are verified by the $0.25{\mu}m$ CMOS n-well parameter HSPICE simulation. As a result, the gain and the unity gain frequency are 42dB and 200MHz respectively in the element on 2V supply voltage. And power dissipation of the designed circuit is 0.32mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.8-18
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• 2007

In this paper, a 4bit cell way structure of PoRAM and the sensing method to drive this structure are researched. PoRAM has a different operation from existing SRAM and DRAM. The operation is that when certain voltage is applied between top electrode and bottom electrode of PoRAM device we can classify the cell state by measuring cell current which is made by changing resistance of the cell. In the decoder selected by new-addressing method in the cell array, the row decoder is selected "High" and the column decoder is selected "Low" then certain current will flow to the bit-line. Because this current is detect, in order to make large enough current, the voltage sense amplifier is used. In this case, usually, 1-stage differential amplifier using current mirror is used. Furthermore, the detected value at the cell is current, so a diode connected NMOSFET, that is, a device resistor is used at the input port of the differential amplifier to converter current into voltage. Using this differential amplifier, we can classify the cell states, erase mode is "Low" and write mode is "High", by comparing the input value, Vin, that is a product of current value multiplied by resistor value with a reference voltage, Vref.