• Title/Summary/Keyword: 전류 모드 신호 처리

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MIRIS에서 적외선 관측용 이미지 센서의 제어를 위한 FPGA 개발

  • Bang, Seung-Cheol;Lee, Dae-Hui;Wi, Seok-O;Ga, Neung-Hyeon;Cha, Sang-Muk;Park, Yeong-Sik;Nam, Uk-Won;Jeong, Ung-Seop;Lee, Chang-Hui;Mun, Bong-Gon;Park, Seong-Jun;Lee, Deok-Haeng;Pyo, Jeong-Hyeon;Han, Won-Yong
    • Bulletin of the Korean Space Science Society
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    • 2010.04a
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    • pp.25.2-25.2
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    • 2010
  • MIRIS는 과학기술위성 3호의 주 탑제체로 우주 및 지구의 적외선 관측을 위한 두 개의 카메라 시스템을 가지고 있으며 이를 위한 적외선 검출용 이미지 센서가 각각 장착되어 있다. 이미지 센서를 통해 검출된 이미지 데이터를 읽기 위해 고속의 데이터 처리가 요구되어 FPGA 구성방식으로 전용 제어기를 구성하였다. 우주 및 지구의 적외선 관측용 이미지 센서는 구성 및 동작방법이 달라 요구기능을 만족하는 각각의 전용 이미지 센서 제어기를 개발했다. FPGA를 이용한 이미지 센서 제어기에는 검출된 이미지를 읽기위한 센서 제어 신호발생기, 아날로그 이미지 신호를 디지털 정보로 변환하는 ADC 제어용 신호 발생기, ADC의 출력 신호를 고속의 직렬 통신선로로 출력 하는 기능 외에 동작 모드 및 동작 상태 입력용 DSP 인터페이스, 고속의 직렬 통신 선로에 MIRIS 상태정보 삽입 기능, 제어기의 기능을 원격지에서 확인 할 수 있는 이미지 패턴 생성기능 등을 가지고 있다. 특히, 이미지를 읽기 위한 동작 시에만 클록 주파수를 인가하는 방법으로 FPGA 내부 회로를 구성하여 전류의 소모량을 최소화 하였다.

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A Design of Bipolar Transresistance Amplifiers (바이폴라 트랜스레지스턴스 증폭기 설계)

  • Cha, Hyeong-U;Im, Dong-Bin;Song, Chang-Hun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.11
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    • pp.828-835
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    • 2001
  • Novel bipolar transresistance amplifier(TRA) and its offset-compensated TRA for high-performance current-mode signal processing are described. The TRA consist of two current follower for a current inputs, a current summer for the current-difference, a resistor for the current to voltage converter, and a voltage follower for the voltage output. The offset-compensated TRA adopts diode-connected npn and pnp transistor to reduce offset voltage in the TRA. The simulation results show that the TRA has impedance of 0.5 Ω at the input and the output terminal. The offset voltages at these terminals is 40 mV The offset-compensated TRA has the offset voltage of 1.1 mV and the impedance of 0.25 Ω. The 3-dB cutoff frequency is 40 MHz for the two TRA's when used as a current to voltage converter with unit-gain transresistance. The power dissipation is 11.25 mW.

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Design of OTA Circuit for Current-mode FIR Filter (Current-mode FIR Filter 동작을 위한 OTA 회로 설계)

  • Yeo, Sung-Dae;Cho, Tae-Il;Shin, Young-Chul;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.7
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    • pp.659-664
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    • 2016
  • In this paper, we suggest operational trans-conductance amplifier(OTA) for current-mode FIR filter that can be used in a digital circuit system requiring high operating frequency and low power consumption. The current-mode signal processing is one of the very innovative design method for a low power consumption system with high operating frequency because it shows a constant power regardless of frequency. From the simulation result using 0.35um CMOS process, when Vdd is 2V, it is confirmed that the proposed circuit showed the dynamic range of the about 1V, about 50% of supply voltage and output current swing of about 0~200uA. Also, the power consumption was evaluated with about 21uW and the active size for an integration was measured with $71um{\times}166um$.

A Study of the Radiation Characteristics of Novel Printed Antenna Composed of Dual Elements with Different Shape (다른 형태를 가진 2소자 프린트 안테나의 방사특성에 관한 연구)

  • Lee, Chai-Bong;Kim, Jung-Hyun
    • Journal of the Institute of Convergence Signal Processing
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    • v.9 no.2
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    • pp.141-145
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    • 2008
  • When the current flows to parallel lines with different length, it is researched that the radiation is occured by the common-mode current radiates, and the small light weight antenna composed of dual elements by using the principle is proposed. However, there is a problem in production about this antenna because this liner antenna is structured by combining with wires. In this paper, we improved this liner antenna, and designed the plane antenna composed of dual elements with different length in the plane printed board to produce and to design easily. Furthermore, the antenna with the wide-band characteristic is also designed in the same board. The radiation pattern is similar to the dipole antenna on account of designing the triangular patch S, the notch and two tapers in patch S, the notch and two tapers in the antenna element. In result, it was able to design the antenna working wider band-width(the bandwidth ratio about 58%, $VSWR{\le}2$).

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Design of A 3V CMOS Fully-Balanced Complementary Current-Mode Integrator (3V CMOS Fully-Balanced 상보형 전류모드 적분기 설계)

  • Lee, Geun-Ho;Bang, Jun-Ho;Cho, Seong-Ik;Kim, Dong-Yong
    • The Journal of the Acoustical Society of Korea
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    • v.16 no.3
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    • pp.106-113
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    • 1997
  • A 3V CMOS continuous-time fully-balanced integrator for low-voltage analog-digital mixed-mode signal processing is designed in this paper. The basic architecture of the designed fully-balanced integrator is complementary circuit which is composed of NMOS and PMOS transistor. And this complementary circuit can extend transconductance of an integrator. So. the unity gain frequency, pole and zero of integrator are increased by the extended transconductance. The SPICE simulation and small signal analysis results show that the UGF, pole and zero of the integrator is increased larger than those of the compared integrtors. The three-pole active low-pass filter is designed as a application circuit of the fully-balanced integrator, using 0.83V CMOS processing parameter.

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Design of Multi-Valued Process using SD, PD (SD 수, PD 수를 이용한 다치 연산기의 설계)

  • 임석범;송홍복
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.2 no.3
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    • pp.439-446
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    • 1998
  • This paper presents design of SD adder and PD adder on Multi-Valued Logic. For implementing of Multi-valued logic circuits we use Current-mode CMOS circuits and also use Voltage-mode CMOS circuits partially. The proposed arithmetic circuits was estimated by SPICE simulation. At the SD(Signed-Digit) number presentation applying Multi-Valued logic the carry propagation is always limited to one position to the left this number presentation allows fast parallel operation. The addition method that add M operands using PD( positive digit number) is effective not only for the realization of the high-speed compact arithmetic circuit, but also for the reduction of the interconnection in the VLSI processor. therefor, if we use PD number representation, the high speed processor can be implementation.

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A Process Detection Circuit using Self-biased Super MOS composit Circuit (자기-바이어스 슈퍼 MOS 복합회로를 이용한 공정 검출회로)

  • Suh Benjamin;Cho Hyun-Mook
    • Journal of the Institute of Convergence Signal Processing
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    • v.7 no.2
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    • pp.81-86
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    • 2006
  • In this paper, a new process detection circuit is proposed. The proposed process detection circuit compares a long channel MOS transistor (L > 0.4um) to a short channel MOS transistor which uses lowest feature size of the process. The circuit generates the differential current proportional to the deviation of carrier mobilities according to the process variation. This method keep the two transistor's drain voltage same by implementing the feedback using a high gain OPAMP. This paper also shows the new design of the simple high gam self-biased rail-to-rail OPAMP using a proposed self-biased super MOS composite circuit. The gain of designed OPAMP is measured over 100dB with $0.2{\sim}1.6V$ wide range CMR in single stage. Finally, the proposed process detection circuit is applied to a differential VCO and the VCO showed that the proposed process detection circuit compensates the process corners successfully and ensures the wide rage operation.

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A 2.0-GS/s 5-b Current Mode ADC-Based Receiver with Embedded Channel Equalizer (채널 등화기를 내장한 2.0GS/s 5비트 전류 모드 ADC 기반 수신기)

  • Moon, Jong-Ho;Jung, Woo-Chul;Kim, Jin-Tae;Kwon, Kee-Won;Jun, Young-Hyun;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.184-193
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    • 2012
  • In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI)without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.

An 8b 240 MS/s 1.36 ㎟ 104 mW 0.18 um CMOS ADC for High-Performance Display Applications (고성능 디스플레이 응용을 위한 8b 240 MS/s 1.36 ㎟ 104 mW 0.18 um CMOS ADC)

  • In Kyung-Hoon;Kim Se-Won;Cho Young-Jae;Moon Kyoung-Jun;Jee Yong;Lee Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.1
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    • pp.47-55
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    • 2005
  • This work describes an 8b 240 MS/s CMOS ADC as one of embedded core cells for high-performance displays requiring low power and small size at high speed. The proposed ADC uses externally connected pins only for analog inputs, digital outputs, and supplies. The ADC employs (1) a two-step pipelined architecture to optimize power and chip size at the target sampling frequency of 240 MHz, (2) advanced bootstrapping techniques to achieve high signal bandwidth in the input SHA, and (3) RC filter-based on-chip I/V references to improve noise performance with a power-off function added for portable applications. The prototype ADC is implemented in a 0.18 um CMOS and simultaneously integrated in a DVD system with dual-mode inputs. The measured DNL and INL are within 0.49 LSB and 0.69 LSB, respectively. The prototype ADC shows the SFDR of 53 dB for a 10 MHz input sinewave at 240 MS/s while maintaining the SNDR exceeding 38 dB and the SFDR exceeding 50 dB for input frequencies up to the Nyquist frequency at 240 MS/s. The ADC consumes, 104 mW at 240 MS/s and the active die area is 1.36 ㎟.

Current to Voltage Converter for Low power OFDM modem (저전력 OFDM 모뎀 구현을 위한 IVC설계)

  • Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.3 no.2
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    • pp.86-92
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    • 2008
  • Othogonal Frequency Division Multiplexing(OFDM) has been taken notice of 4th generation communication method because it has a merit of high data rate(HDR). To realize HDR communication, The OFDM a s high efficient Fast-Fourier-Transform (FFT)/Inversion FFT (IFFT) processor. Currently OFDM is realized by Digital Signal Processor(DSP) but it consumes a lot of Power. Therefore, current-mode FFT LSI has been proposed for compensation of this demerit. In this paper, we propose IVC for current-mode FFT LSI. From the simulation result, the output value of IVC is more than 3V when the value of FFT Block output is more than $7.35{\mu}A$. The output value of IVC is lower than 0.5V when the value of FFT Block output is lower than $0.97{\mu}A$. Designed IVC Low-power Current mode FFT LSI will contribute to the operation of current-mode FFT LSI and the development of next generation wireless communication systems.

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