• Title/Summary/Keyword: 전류원 분석

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Analysis of Channel Doping Concentration Dependent Subthreshold Characteristics for Double Gate MOSFET (이중게이트 MOSFET에서 채널도핑농도에 따른 문턱전압이하 특성 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.10
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    • pp.1840-1844
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    • 2008
  • In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.

Fiber-Optic Current Transformer for the Over Current Protection Relay (과전류 보호계전기용 광섬유 전류센서)

  • Song, Min-Ho;Yang, Chang-Soon;Ahn, Seong-Joon;Park, Byoung-Seok;Lee, Byoung-Ho
    • Journal of the Korean Society for Nondestructive Testing
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    • v.21 no.5
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    • pp.542-548
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    • 2001
  • A robust, accurate, broad-band, alternating current sensor using fiber-optics is being developed as a part of optical over current protection relay system. The sensor uses the Faraday effect in optical fiber and polarimetric measurements tc sense electrical current. The current sensing coil consists of a length of twisted optical fiber and Faraday rotator mirror to suppress the linear birefringence effect. Due to its single-ended closed path structure, it can not only be easily installed to the target with great isolation from other fields in the vicinity, but the sensitivity can be increased by using multiple turns. This paper reports on the theoretical backgrounds of the sensor design and the preliminary experimental results.

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Optimum Tuning of Current Controller for Grid-connected Inverter under the Distorted Voltage Condition in Distribution System (배전계통 전압왜곡 하에서의 연계인버터 전류제어기의 최적조정)

  • Ahn, Jong-Bo;Hwang, Ki-Hyun;Park, June-Ho
    • Proceedings of the KIPE Conference
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    • 2005.07a
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    • pp.532-534
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    • 2005
  • 본 논문은 신${\cdot}$재생에너지원을 이용한 분산전원용 계통연계 인버터의 전류고조파저감에 관한 연구로서 전류고조파는 진력풍질 측면에서 중요한 요소 중의 하나이나 전원전압의 불평형, 왜곡 및 부적절한 전류제어기의 조정 등의 원인으로 인하여 이런 목적의 달성이 어렵게 된다. 전류제어기법 중에는 동기좌표게 상에서 동작하는 전향보상부 PI 제어기가 일반적으로 사용되고 있으며 본 논문에서는 전원전압 왜곡 하에서 전류제어기 이득과 전류고조파의 관계를 분석하고 Particle Swarm Optimization(PSO) 알고리즘을 이용하여 PI 제어기를 최적 조정하는 방법을 제안하였으며 모의시험과 적용실험을 통하여 그 유용성을 입증하였다.

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L Filter Design using normalized table with Theoretical Analysis of the Harmonic Content of PWM Waveforms (PWM 파형의 이론적 분석을 통한 정규화된 테이블을 이용한 L 필터 설계)

  • Han, Dong Yeop;Kim, Sungmin
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.227-229
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    • 2019
  • 계통의 전류 고조파는 전압 고조파에 의해 야기된다고 볼 수 있다. 따라서 전압 고좌에 해당하는 임피던스를 설계함으로써 전류 고조파를 원하는 크기로 제안할 수 있다. 전압 고조파는 직류단 전압, Modulation index 등에 의해서 결정되며, 허용되는 전류 고조파의 크기는 해당 시스템의 용량과 주파수에 따라 달라진다. 본 논문은 더블 푸리에 변환을 통해 전압 고조파를 식으로 풀어 주파수와 변조지수에 따른 정규화 된 전압 고조파 표를 이용해, 임의의 시스템에 적용할 수 있는 L 필터 설계 절차를 제안한다.

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Analysis of Problems when Generating Negative Power for IT devices (IT 기기의 마이너스 전원 생성 시 문제점에 관한 분석)

  • Jun, Ho-Ik;Lee, Hyun-Chang
    • Journal of Software Assessment and Valuation
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    • v.16 no.2
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    • pp.109-115
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    • 2020
  • In this paper, the problem that occurs when negative voltage is generated using an inexpensive buck device in an IT device that is supplied with a single power by an adapter or battery is analyzed. For the cause analysis, the principle of operation of the buck device and the principle of the inverter circuit were examined, and the circuit characteristics of the inverter circuit were analyzed using the buck device. As a result of the analysis, it was confirmed that the inverter circuit using the buck device initially needs a large starting current, and in particular, in the case of a current capacity that is less than the starting current in the circuit that supplies power, it was confirmed that it could fall into a state similar to the latch-up phenomenon. In order to confirm the analysis result, an experimental circuit was constructed and the input current was checked. If the supply current is sufficient, it is confirmed that over-current flows and starts. If the supply current is insufficient, the circuit cannot start and a latch-up phenomenon occurs.

Analysis of Internal Dynamics in Modular Multilevel Converter for Reducing Power Oscillation Under Grid Voltage Distortion (AC 계통 불평형 조건에서 출력동요 저감을 위한 MMC 내부 동적특성 분석)

  • Lee, Sang-Jung;Kang, Jaesik;Kang, Dae-Wook;Park, Young-Joo;Jung, Jee-Hoon
    • Proceedings of the KIPE Conference
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    • 2020.08a
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    • pp.320-321
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    • 2020
  • 본 논문은 AC 계통 불평형 발생 시 출력전력의 동요를 저감시키기 위한 POD 전략을 수행하는 MMC-HVDC 시스템의 내부 동적상태를 분석하였다. POD 전략을 통해서 MMC 출력전류의 역상분을 제어하여 계통에 주입되는 유효 전력의 발진을 제거함으로써, MMC-HVDC 시스템이 연계된 인근 계통에 공급 신뢰도를 향상시킬 수 있다. POD 전략에서 유효 전력만 출력할 경우, MMC의 각 상에는 동일한 전력이 흐른다. 반면, 계통 전압 보상을 위해서 무효 전력을 동시에 공급할 경우, 각 상에 흐르는 전력은 불균형해지기 때문에 MMC의 암전류 불평형이 발생하여 스위치 소자의 정격 용량 및 열 스트레스를 증가 시켜 MMC의 안정성을 저해시킨다. 본 논문은 POD 전략을 수행하기 위해서 무효 전력이 MMC 암 전류에 미치는 영향을 분석하였으며, 200 MW MMC-HVDC 모델을 바탕으로 PSCAD/EMTDC 시뮬레이션 툴을 이용하여 분석 결과를 검증하였다.

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Development of PV cell performance analyzer (태양광전지 성능 분석기 개발)

  • Park, Hyeonah;Kim, Sungjun;Jang, Hyewon;Kim, Hyosung
    • Proceedings of the KIPE Conference
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    • 2013.07a
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    • pp.66-67
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    • 2013
  • 태양광전지는 태양광 에너지를 전기에너지의 형태로 변환한다. 태양광전지는 부하조건에 따라 전류원 및 전압원의 특성을 모두 갖는 I-V 특성곡선을 나타낸다. 같은 회사에서 제조한 동일한 모델의 태양광전지라 하더라도 특성에 조금씩 편차가 발생한다. 태양광전지를 직렬접속하여 대규모의 태양광어레이를 구성하는 경우, 각 태양광전지의 특성편차는 전체 태양광어레이의 전력생산능력을 감소시키게 되므로 같은 특성을 갖는 태양광전지를 구별하여 어레이를 제작할 필요가 있다. 본 논문에서는 이러한 태양광전지의 특성을 자동적으로 측정 분석하여 LabVIEW GUI화면을 통하여 결과를 출력하는 태양광전지 성능 분석기를 개발한다.

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Transient Response characteristics Associated with the Common Connection Points in Grounding Systems for Electric Power Utilitires (전력설비용 접지시스템에 공결점에 따른 과도응답특성)

  • 이복희;이승칠;엄주홍;심판섭
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.3
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    • pp.101-108
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    • 1999
  • Ths paper describes the transient response characteristics of the grounding systems for electric power facilities against impluse currents. In this work, when the impulse current was injected through the grounding conductor for arrester, the investigations treasuring and analyzing potential rises induced at the cormron cormection trint and other grounding conductors were conducted. The lightning impulse current was awliErl so as to simulate the on-set of arrester due to lightning surges. Measured results of impulse response characteristics from the present experinrrits are as follows;

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Analysis of Dimension Dependent Subthreshold Swing for FinFET Under 20nm (20nm이하 FinFET의 크기변화에 따른 서브문턱스윙분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.10
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    • pp.1815-1821
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    • 2006
  • In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.

Analysis of Dimension Dependent Subthreshold Swing for Double Gate FinFET Under 20nm (20nm이하 이중게이트 FinFET의 크기변화에 따른 서브문턱스윙분석)

  • Jeong Hak-Gi;Lee Jong-In;Joung Dong-Su
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.865-868
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    • 2006
  • In this paper, the subthreshold swing has been analyzed for double gate FinFET under channel length of 20nm. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel-Framers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained.

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