• Title/Summary/Keyword: 전류센서

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A 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS Algorithmic A/D Converter (14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS 알고리즈믹 A/D 변환기)

  • Park, Yong-Hyun;Lee, Kyung-Hoon;Choi, Hee-Cheol;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.12 s.354
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    • pp.65-73
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    • 2006
  • This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

A Study on the Characteristics Assessment and Fabrication of Distribution Board according to KEMC Standards (KEMC 규정에 의한 분전반의 제작 및 특성 평가에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Fire Science and Engineering
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    • v.31 no.3
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    • pp.63-72
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    • 2017
  • This study fabricated a low-voltage 10 circuit distribution board based on the KEMC (Korea Electrical Manufacturers Cooperative) 2102-610 standard and performed a characteristics assessment of the developed 10 circuit distribution board to secure product stability. The developed 10 circuit distribution board is designed to have the characteristics of insulation materials, as well as resistance to corrosion ultraviolet radiation and mechanical impact. The developed distribution board is fabricated to have an appropriate protection class of enclosure, electric shock prevention and protection circuits, switchgear and its components, internal electrical circuits and connectors, external conduct terminal, insulation characteristics, temperature rise test, heat resistance, etc. The developed 10 circuit distribution board consists of a single phase circuit and 3-phase circuits. It is possible to measure in real time the leakage current generated from the load distribution line by installing a sensor module at the load side of each of the branched switchgears. In addition, it is possible to increase a circuit according to the use and purpose of the load and to also manage and check the load in real time. Temperature rise tests were performed on the developed 10 circuit distribution board at 18 places including the inlet connection, main circuit and distribution circuit bus bars and bus bar supports, etc. The highest temperature of $65.3^{\circ}C$ was measured at the R-Phase of the connection of the MCCB power supply for the branch circuit bus bar and a temperature rise of $61.6^{\circ}C$ was measured at the T-Phase of the load side. When applying thermal stress to an MCCB for 6 hours at $180^{\circ}C$ using a heat resistant experimental device, it was found that the actuator lever was transformed and moved in the tripped state.

Mesh/grid 기반 투명 전극의 구조 최적화

  • Yun, Min-Ju;Kim, Gyeong-Heon;Park, Sang-Yeong;Kim, Hui-Dong;An, Ho-Myeong;Kim, Tae-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.411-412
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    • 2013
  • 최근 UV LED는 생화학 및 의료 산업에서 많은 각광을 받고 있다. 특히, 360nm 이하의 파장대를 갖는 UV LED는 치료 기술, 센서, 물이나 공기 등의 정화와 같은 목적으로 특별한 관심이 쏠리고 있다 [1]. 이러한 지속적인 연구를 통하여 현재까지 UV LED는 거대한 성장을 이루어 왔다. 하지만 이러한 노력에도 불구하고, 360 nm 이하의 UV LED는 여전히 오믹 접촉과 전류 분산이 원활하지 못하다는 문제점을 가지고 있다. 이것은 UV LED의 외부 양자 효율을 감소시키고, 더 나아가 극도로 낮은 광 추출 효율을 초래한다. 최근 이러한 문제를 해결하고자, 투명 전도성 산화물(TCO)을 금속 전극과 p-AlGaN 사이에 삽입해주는데, 현재 가장 널리 사용되는 TCO 물질은 ITO 이다 [2]. 하지만 ITO 물질은 상대적으로 작은 밴드갭(3.3~4.3 eV)과 단파장 빛이 가지는 큰 에너지로 인하여 deep-UV 영역에서는 빛이 투과하지 못하고 대부분 흡수된다 [3]. 따라서 본 연구에서는 기존의 박막형 ITO 투명 전극에 비해 투과도 손실을 최소화할 수 있는 mesh, grid 기반의 투명전극을 연구하였다. Fig. 1과 같이 $5{\mu}m$, $10{\mu}m$, $20{\mu}m$ 간격으로 이루어진 mesh, grid 구조의 투명전극을 구현하여 투과도 손실을 최소화하면서 우수한 전기적 특성을 확보하기 위한 구조 최적화 연구를 진행하였다. 본 연구를 위해 mesh, grid 구조의 ITO 전극 패턴을 photolitho 공정으로 형성하였으며, e-beam 증착법으로 60 nm 두께의 ITO 전극을 형성 후 질소 분위기/$650^{\circ}$에서 30초 동안 RTA 공정을 진행하였다. Fig. 1에서 볼 수 있듯이 mesh, grid의 간격이 증가할수록 투명 전극이 차지하는 면적이 감소하여 투과도는 향상되는 반면, 투명 전극과 p-GaN과의 접촉 면적 또한 감소하므로 오믹 특성이 저하된다. 따라서 투과도 손실을 최소화하면서 우수한 전기적 특성을 확보하기 위해 mesh는 $20{\mu}m$, grid는 $10{\mu}m$ 간격의 구조로 각각 최적화하였다. 그 결과 박막 기반의 ITO 투명전극 대비 최대 약 10% 향상된 투과도를 확보하였으며, I-V Curve 결과를 통하여 p-GaN 기판과 mesh 구조의 ITO 전극 사이에 박막 기반의 투명 전극과 비슷한 수준인 $0.35{\mu}A(@5V)$의 전기적 특성을 확보하였다. 결과적으로 mesh, grid 기반 투명전극의 구조 최적화를 통하여 p-GaN과 원활한 오믹 접촉을 형성하는 동시에 기존 박막형 ITO 투명 전극 구조보다 높은 투과도를 확보할 수 있었다.

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Electrical Characteristics of High Power Multilayer Piezoelectric Transformer Fabricated using Atrrition Milling Method (Attrition Milling법으로 제작된 고출력 적층 압전변압기의 전기적 특성)

  • Oh, Young-Kwang;Seo, Byeong-Ho;Yoo, Ju-Hyun;Kim, In-Sung;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.18-18
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    • 2010
  • 전기적 에너지를 기계적 에너지로 변환하고 또한, 기계적 에너지를 전기적 에너지로 변환할 수 있는 압전 세라믹스는 압전 변압기 (piezoelectric transformer), 초음파 모터, 센서 등과 같은 응용분야에 광범위하게 사용되고 있다. 특히, 전원장치에 있어서 현재 주요 전자제품에 사용되고 있는 권선형 변압기와 같은 전자 변환기의 대체품으로 압전 세라믹스 소재의 특성을 이용한 압전변압기의 개발과 응용연구는 국내외적으로 활발히 연구되어왔다. 압전변압기는 권선형 변압기와 비교 하였을 때 누설자속이 없어 노이즈 발생이 없고, 공진주파수만을 이용하므로 출력의 파형이 정현파에 가까워 고조파 잡음이 없으며, 불연성의 특징을 가지고 있다. 추가적으로 압전 변압기는 소형화, 슬림화, 경량화가 가능하며 90%이상의 높은 효율을 얻을 수 있다. 또한, 단판형 압전변압기의 출력한계를 개선하기 위해 높은 승압비와 고출력을 갖는 적층타입의 압전변압기가 제안되었다. 압전변압기용 조성 세라믹스는 높은 에너지 변환효율을 위해서 전기기계결합계수 ($k_p$)가 커야 하며, 발열에 의한 온도 상승을 억제하기 위하여 기계적 품질계수(Qm)가 큰 것이 바람직하다. 또한, 높은 전류를 발생하기 위해서는 유전상수가 커 압전변압기의 출력측 정전용량을 크게 하여야한다. 이러한 압전변압기의 제작 조건을 위해 우수한 압전 및 유전특성을 갖는 PZT계 세라믹스가 주로 사용 되어져 왔다. 그러나, PZT계 세라믹스의 우수한 압전 및 유전특성에도 불구하고 $1000^{\circ}C$에서 급격히 휘발하는 PbO의 성질 때문에 환경적으로나 인체의 건강문제로 인해 전세계적으로 그 사용량을 제한하고 있다. 또한 적층 압전변압기의 구조적 특성상 내부전극과 함께 소결하여야 하는데, 이때 소결온도가 높으면 값비싼 Pd합량이 높은 전극을 사용하여야 한다. Pd함량이 10%미만인 Ag/Pd 전극을 사용하기 위해서는 $950^{\circ}C$ 이하에서 저온소결이 가능한 세라믹스 제조가 필수적이라 할 수 있다. 소결온도를 낮추는 방법으로는 다른 물질들을 치환하여 소결온도를 낮추는 방법과 미세분말을 만들어 그레인사이즈를 미세화 하는 방법들이 있다. 많은 미세 분말 제조 방법 중에서 Attrition mill은 일반적인 ball mill에 비해 분말의 입도를 미세하게 할 수 있어 증가된 분말의 비표면적에 의하여 반응을 촉진시킴으로써 저온소결이 가능한 세라믹스를 만들 수 있다. 따라서 본 연구에서는 소결온도가 낮으면서도 유전 및 압전특성이 우수한 조성을 사용하여 적층 압전변압기를 제작하여 전기적 특성을 조사하였다.

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Triboelectric Nanogenerator Utilizing Metal-to-Metal Surface Contact (금속-금속 표면 접촉을 활용한 정전 소자)

  • Chung, Jihoon;Heo, Deokjae;Lee, Sangmin
    • Composites Research
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    • v.32 no.6
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    • pp.301-306
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    • 2019
  • Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

Properties of Exchange Bias Coupling Field and Coercivity Using the Micron-size Holes Formation Inside GMR-SV Film (GMR-SV 박막내 미크론 크기의 홀 형성을 이용한 교환결합세기와 보자력 특성연구)

  • Bolormaa, Munkhbat;Khajidmaa, Purevdorj;Hwang, Do-Guwn;Lee, Sang-Suk;Lee, Won-Hyung;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
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    • v.25 no.4
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    • pp.117-122
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    • 2015
  • The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

Shape Magnetic Anisotropy on Magnetic Easy Axis of NiFe/Cu/NiFe/IrMn Spin Valve Thin Film (NiFe/Cu/NiFe/IrMn 스핀밸브 박막소자의 자화 용이축에 따른 형상 자기이방성)

  • Choi, Jong-Gu;Kwak, Tae-Joon;Lee, Sang-Suk;Sim, Jung-Taek
    • Journal of the Korean Magnetics Society
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    • v.20 no.2
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    • pp.35-40
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    • 2010
  • The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

A small ocean bottom electromagnetometer and ocean bottom electrometer system with an arm-folding mechanism (Technical Report) (팔-접힘 구조를 가지는 소규모 OBEM과 OBE시스템 (기술보고서))

  • Kasaya, Takafumi;Goto, Tada-nori
    • Geophysics and Geophysical Exploration
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    • v.12 no.1
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    • pp.41-48
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    • 2009
  • Natural magnetic fields are attenuated by electrically conductive water. For that reason, marine magnetotelluric surveys have collected data at long periods (1000-100 000 s). The mantle structure has been the main target of seafloor magnetotelluric measurements. To ascertain crustal structure, however, electromagnetic data at shorter periods are important, e.g. in investigations of megathrust earthquake zones, or in natural resource surveys. To investigate of the former, for example, electromagnetic data for periods of less than 1000 s are necessary. Because no suitable ocean bottom electromagnetometer (OBEM) has been available, we have developed a small OBEM and ocean bottom electrometer (OBE) system with a high sample rate, which has an arm-folding mechanism to facilitate assembly and recovering operations. For magnetic observation, we used a fluxgate sensor. Field observations were undertaken to evaluate the field performance of our instruments. All instruments were recovered and their electromagnetic data were obtained. Results of the first experiment show that our system functioned well throughout operations and observations. Results of other field experiments off Tottori support the claim that the electromagnetic data obtained using the new OBEM and OBE system are of sufficient quality for the survey target. These results suggest that this device removes all instrumental obstacles to measurement of electromagnetic fields on the seafloor.

Improvement of PWM Driving Control Characteristics for Low Power LED Security Light (저전력형 LED 보안등의 PWM형 구동제어 특성 개선)

  • Park, Hyung-Jun;Kim, Nag-Cheol;Kim, In-Su
    • Journal of IKEEE
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    • v.21 no.4
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    • pp.368-374
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    • 2017
  • In this Paper, we developed a low power type LED security light using LED lighting that substitutes a 220[V] commercial power source for a solar cell module instead of a halogen or a sodium lamp. in addition, a PWM type drive control circuit is designed to minimize the heat generation problem and the drive current of the LED drive controller. in developed system, The light efficiency measurement value is 93.6[lm/W], and a high precision temperature sensor is used inside the controller to control the heat generation of the LED lamp. In order to eliminate the high heat generated from the LED lamp, it is designed to disperse quickly into the atmosphere through the metal insertion type heat sink. The heat control range of LED lighting was $50-55[^{\circ}C]$. The luminous flux and the lighting speed of the LED security lamp were 0.5[s], and the beam diffusion angle of the LED lamp was about $110[^{\circ}C]$ by the light distribution curve based on the height of 6[m].

A Study On Design of ZigBee Chip Communication Module for Remote Radiation Measurement (원격 방사선 측정을 위한 ZigBee 원칩형 통신 모듈 설계에 대한 연구)

  • Lee, Joo-Hyun;Lee, Seung-Ho
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.552-558
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    • 2014
  • This paper suggests how to design a ZigBee-chip-based communication module to remotely measure radiation level. The suggested communication module consists of two control processors for the chip as generally required to configure a ZigBee system, and one chip module to configure a ZigBee RF device. The ZigBee-chip-based communication module for remote radiation measurement consists of a wireless communication controller; sensor and high-voltage generator; charger and power supply circuit; wired communication part; and RF circuit and antenna. The wireless communication controller is to control wireless communication for ZigBee and to measure radiation level remotely. The sensor and high-voltage generator generates 500 V in two consecutive series to amplify and filter pulses of radiation detected by G-M Tube. The charger and power supply circuit part is to charge lithium-ion battery and supply power to one-chip processors. The wired communication part serves as a RS-485/422 interface to enable USB interface and wired remote communication for interfacing with PC and debugging. RF circuit and antenna applies an RLC passive component for chip antenna to configure BALUN and antenna impedance matching circuit, allowing wireless communication. After configuring the ZigBee-chip-based communication module, tests were conducted to measure radiation level remotely: data were successfully transmitted in 10-meter and 100-meter distances, measuring radiation level in a remote condition. The communication module allows an environment where radiation level can be remotely measured in an economically beneficial way as it not only consumes less electricity but also costs less. By securing linearity of a radiation measuring device and by minimizing the device itself, it is possible to set up an environment where radiation can be measured in a reliable manner, and radiation level is monitored real-time.