• Title/Summary/Keyword: 전류감지기

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A Study on the Design of Built-in Current Sensor for High-Speed Iddq Testing (고속 전류 테스팅 구현을 위한 내장형 CMOS 전류 감지기 회로의 설계에 관한 연구)

  • Kim, Hoo-Sung;Park, Sang-Won;Hong, Seung-Woo;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1254-1257
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    • 2004
  • This paper presents a built-in current sensor(BICS) that can detect defects in CMOS integrated circuits through current testing technique - Iddq test. Current test has recently been known to a complementary testing method because traditional voltage test cannot cover all kinds of bridging defects. So BICS is widely used for current testing. but there are some critical issues - a performance degradation, low speed test, area overhead, etc. The proposed BICS has a two operating mode- normal mode and test mode. Those methods minimize the performance degradation in normal mode. We also used a current-mode differential amplifier that has a input as a current, so we can realize higher speed current testing. Furthermore, only using 10 MOSFETS and 3 inverters, area overhead can be reduced by 6.9%. The circuit is verified by HSPICE simulation with 0.25 urn CMOS process parameter.

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Development of a Precision BLDC Servo Position Controller for Composite Smoke Bomb Azimuth Driving System (복합연막탄 선회구동장치를 위한 정밀 BLDC 서보 위치 제어기 개발)

  • Koo, Bon-Min;Choi, Sung-Jin;Choi, Jung-Keyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.3
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    • pp.467-472
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    • 2006
  • This study has been done to design a precise system and develop position control algorithm to control a Composite Smoke Bomb Azimuth driving apparatus of a BLDC servo motor. Having to Blind the sight of opposite tank. the Smoke Bomb Rotational driving system needs instant response that is able to detect opponent appearance and blast the bomb at a short time. So a design that shows fast current response capability or $300[Hz]\sim500[Hz]$ is proposed. in the MIN-MAX PWM technology is used to increase the operational speed. in order to control the blasting position, a precision position control algorithm that utilizes the integral value of speed trajectory is suggested. Also these characteristics are monitored and assessed by the PC based monitoring program which shows the graphs of current, voltage, position, and speed parameters. The main controller is based on a TMS320VC33 high performance floating-point DSP(Digital Signal Process) and the PWM generator utilizes EPM7128 CPLD.

A Study on the Measurement of Spectral Characteristics of Semiconductor Light Sources driven by Very Short Pulse Currents (짧은 펄스로 구동되는 반도체 발광소자의 파장측정에 관한 연구)

  • 김경식;김재창;조호성;홍창희
    • Korean Journal of Optics and Photonics
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    • v.1 no.2
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    • pp.198-203
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    • 1990
  • In this paper, a system has been proposed for the measurement of the spectral characteristic of semiconductor light sources driven by very short pulse currents. This system has been constituted a monochrometer of 600 groovedmm grating and of 275 mm focal length, X-Y recorder, scanning motor which enables the system to get the analog data, and amplifier coupled with peak detector. Especially, peak detector was used to convert the short pulse signal to continuous one. In order to verify the resolution with slit width, several slits were made by the hands. By using this system, the spectra of commercial LEDs, AlGaAdGaAs LD, and InGaAsPIInP BH-LD which were driven with pulse current (duty cy$e = 0.01) were measured. From these measurements, it has been shown that the proposed system has about 1 A1$\AA$ resolution and 10$\mu$W sensitivity.

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A Study on the Design of a Beta Ray Sensor for True Random Number Generators (진성난수 생성기를 위한 베타선 센서 설계에 관한 연구)

  • Kim, Young-Hee;Jin, HongZhou;Park, Kyunghwan;Kim, Jongbum;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.12 no.6
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    • pp.619-628
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    • 2019
  • In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

Study of multi-stacked InAs quantum dot infrared photodetector grown by metal organic chemical vapor deposition

  • Kim, Jeong-Seop;Ha, Seung-Gyu;Yang, Chang-Jae;Lee, Jae-Yeol;Park, Se-Hun;Choe, Won-Jun;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.129-129
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    • 2010
  • 적외선 검출소자(Infrared Photodetector)는 근적외선에서 원적외선 영역에 이르는 광범위한 파장 범위의 적외선을 이용하는 기기로서 대상물이 방사하는 적외선 영역의 에너지를 흡수하여 이를 영상화할 수 있는 장비이다. 적외선 관련 기술은 2차 세계대전 기간에 태동하였으며, 현재에는 원거리 감지기술 등과 접목되면서 그 활용 분야가 다양해지고 있다. 특히 능동형 정밀 타격무기를 비롯한 감시 정찰 장비 및 지능형 전투 장비 시스템 등에 대한 요구를 바탕으로 보다 정밀하고 신속한 표적 감지 및 정보처리 기술에 관한 연구가 선진국을 통해서 활발히 진행되고 있다. 기존의 Bolometer 형식의 열 감지 소자는 반응 속도가 느리고 측정 감도가 낮은 단점이 있으며, MCT(HgCdTe)를 이용한 적외선 검출기의 경우 높은 기계적 결함과 77K 저온에서 동작해야하기 때문에 발생하는 추가 비용 등이 문제점으로 지적되고 있다[1]. 이에 반해 화합물 반도체 자기조립 양자점(self-assembled quantum dot)을 이용한 적외선 수광소자는 양자점이 가지는 불연속적인 내부 에너지 준위로 인하여, 높은 내부 양자 효율과 온도 안정성을 기대할 수 있으며, 고성능, 고속처리, 저소비전력 및 저소음의 실현이 가능하다. 본 연구에서는 적층 InAs/InGaAs dot-in-a-well 구조를 유기금속화학기상증착법을 이용하여 성장하고 이를 소자에 응용하였다. 균일한 적층 양자점의 성장을 위해서 원자현미경(atomic force microscopy)을 이용하여, 각 층의 양자점의 크기와 밀도를 관찰하였고, photoluminescence (PL)를 이용하여 발광특성을 연구하였다. 각 층간의 GaAs space layer의 두께와 온도 조절 과정을 조절함으로써 균일한 적층 양자점 구조를 얻을 수 있었다. 이를 이용하여 양자점의 전도대 내부의 에너지 준위간 천이(intersubband transition)를 이용하는 n-type GaAs/intrinsic InAs 양자점/n-type GaAs 구조의 양자점 적외선수광소자 구조를 성장하였다. 이 과정에서 상부 n-type GaAs의 성장 온도가 600도 이상이 되는 경우 발광효율이 급격히 감소하고, 암전류가 크게 증가하는 것을 관찰하였다. 이는 InAs 양자점과 주변 GaAs 간의 열에 의한 상호 확산에 의하여 양자점의 전자 구속 효과를 저해하는 것으로 설명된다.

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Design of Inductive Power-line communication system with Earth current (접지전류를 이용한 유도형 전력선통신 시스템 설계)

  • Lee, Won-Ho;Yi, Keon-Young
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1860-1861
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    • 2011
  • 본 논문은 유도형 전력선통신 시스템을 구현하고자 한다. 이 시스템을 응용하여 현재의 수용 가구와 산업 현장에 적용 할 경우, 전력선 자체만으로 데이터 송신이 가능하기 때문에 전력선을 통신선으로 활용, 데이터를 송신하기 위한 접지 공사만으로, 현 각 수용 가구에 설치되어 있는 적산 전력계, 가스계량기, 수도 계량기가 디지털 계기로 대체되었을 경우 전력, 가스, 상수도의 누전 및 누수 등을 중앙 통제실에서 통계적 수치로 감지가 가능하므로 국가 에너지 자원의 효율적인 관리가 가능하다. 본 논문은 이 시스템의 타당성을 조사하기 위해 하드웨어를 제작하여 직접 송/수신 실험을 해보기로 한다.

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A Study on the Correction of Protection Relay of Temporary Electric Power Installations for Storage Tank (저장 탱크용 임시전력설비의 보호계전기 정정에 관한 연구)

  • Son, Seok-Geum
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.6
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    • pp.562-567
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    • 2020
  • In this paper, this is a study on the correction of protection relays to monitor temporary power facilities for storage tanks especially transformers to block and protect faults such as insulation breakdown. When an abnormality such as a short circuit or a ground fault occurs in the power system, it is important to detect this quickly cut off the device and equipment in which the fault occurred and separate it from the power system to correct the protection relay so that it does not interfere with power supply. In addition the fault current calculation that accurately applies the fault type and the cause of the fault for protection cooperation will be the most important factor in the correction of the protection relay. For protection coordination a study was conducted on the method of coordination for protection of power facility protection for storage tanks such as over current relay, ground over current relay, under voltage relay, and ground over voltage relay applied to temporary.

Mode Control Design of Dual Buck Converter Using Variable Frequency to Voltage Converter (주파수 전압 변환을 이용한 듀얼 모드 벅 변환기 모드 제어 설계)

  • Lee, Tae-Heon;Kim, Jong-Gu;So, Jin-Woo;Yoon, Kwang-Sub
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.42 no.4
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    • pp.864-870
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    • 2017
  • This paper describes a Dual Buck Converter with mode control using variable Frequency to Voltage for portable devices requiring wide load current. The inherent problems of PLL compensation and efficiency degradation in light load current that the conventional hysteretic buck converter has faced have been resolved by using the proposed Dual buck converter which include improved PFM Mode not to require compensation. The proposed mode controller can also improve the difficulty of detecting the load change of the mode controller, which is the main circuit of the conventional dual mode buck converter, and the slow mode switching speed. the proposed mode controller has mode switching time of at least 1.5us. The proposed DC-DC buck converter was implemented by using $0.18{\mu}m$ CMOS process and die size was $1.38mm{\times}1.37mm$. The post simulation results with inductor and capacitor including parasitic elements showed that the proposed circuit received the input of 2.7~3.3V and generated output of 1.2V with the output ripple voltage had the PFM mode of 65mV and 16mV at the fixed switching frequency of 2MHz in hysteretic mode under load currents of 1~500mA. The maximum efficiency of the proposed dual-mode buck converter is 95% at 80mA and is more than 85% efficient under load currents of 1~500mA.

A design of rectifier for WPC/A4WP wireless power transfer (WPC/A4WP 무선전력전송을 위한 정류기 설계)

  • Park, Joonho;Moon, Yong
    • Journal of IKEEE
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    • v.22 no.2
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    • pp.393-401
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    • 2018
  • In this paper, a rectifier for WPC / A4WP wireless power transmission is designed. The proposed rectifier supports both WPC (Wireless Power Consortium) and A4WP (Alliance For Wireless Power) and is designed with full-bridge rectifier. WPC transmits power at the frequency of 100kHz to 205kHz and A4WP at the frequency of 6.75MHz. Since the bridge rectifier uses a MOSFET instead of a diode, the reverse current flows and the efficiency is affected if the output voltage is higher than the input voltage. Therefore, we added the reverse current detector that detects the current flowing through the MOSFET and shut off the reverse current. The frequency discriminator is used because the rectifier has different frequency band. The proposed rectifier was designed using $0.35{\mu}m$ CMOS high voltage process. The input voltage is up to 18V and the rectifier operates at 100kH to 205kHz, 6.78MHz frequency. The maximum efficiency is 94.8% and the maximum power transfer is 5.78W.

DC-DC Boost Converter for Thermoelectric Energy Harvesting (열전 에너지 하베스팅을 위한 저전압 DC-DC 부스트 변환기)

  • Kim, Myeong-Kyu;Kim, Han-Na;Bang, Jun-Jeong;Hwang, In-Ho;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.247-250
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    • 2012
  • This paper describes a DC-DC Boost converter for Thermoelectric Energy Harvesting. The designed converter boosts the $V_{DD}$ through a start-up block from a low output voltage of thermoelectric devices and the boosted $V_{DD}$ is used to operate the internal block circuits. When $V_{DD}$ reaches a predefined value, a detector circuit makes the start-up block turn off for minimizing current consumption. The final boosted $V_{OUT}$ is achieved by alternately operating the DC-DC converter for $V_{DD}$ and the other converter for final output $V_{OUT}$ according to the comparator output. Simulation results shows that the designed converter outputs 2.8V from an input voltage of 200mV. The area of the chip designed using a 0.35um CMOS process is $1.52mm{\times}0.95mm$ including pads.

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