• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.53-60
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• 1998

We develope a high repetition rate, short distance, optical range finder for surface roughness measurements of large structures, such as a highway road, etc. For range measurement based on a triangulation principle, we use a light emitting diode and an one dimensional Position sensitive photodetector for a light source and an angle detector of the reflected light at the object, respectively. The range finder has automatic power control and electrical background noise rejection capabilities which enable it to overcome variations of an object reflectance and to eliminate time-varying, as well as constant, background light noises. Our experimental results show less than ${\pm}1.5mm$ of measurement errors regardless of an object reflectance, for $22{\sim}38cm$ object ranges which are determined by considering the installation of the range finder and the depth of surface roughness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.754-764
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• 2001

Class A bipolar second-generation current conveyor (CCII) with low current-input impedance and its offset-compensated CCII for high-accuracy current-mode signal processing are proposed. The CCIIs consist of a regulated current-cell for current input, a emitter follower for voltage input, and a cascode current mirror lot current output. In these architecture, the two input stages are coupled by current mirror to reduce the current input impedance. Experiments show that the CCII has impedance of 8.4 Ω and offset voltage of 40 mV at current input terminal. To reduce this offset, the offset-compensated CCII adopts diode-connected npn and pnp transistor in the proposed CCII. Experiments show that the offset-compensated CCII has current input impedance of 2.1 Ω and offset voltage of 0.05 mV. The 3-dB cutoff frequency of the CCIIs when used as a voltage follower extends beyond 30 MHz. The power dissipation is 7.0 mW

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.79-85
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• 2004

In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.10
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• pp.1137-1144
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• 2012

In this paper, a 2.6 GHz switched parasitic array(SPA) antenna is designed to resolve the device interference in the femtocell. The designed SPA antenna structure consists of a central ${\lambda}/4$ monopole antenna as a radiator and surrounding four parasitic elements operating as a reflector or a director depending on the switching state. In addition, open state monopoles around the parasitic elements are placed to improve the directivity. The designed antenna utilizes RF FETs as switching elements instead of conventional PIN diodes, which enables beam steering with a simple structure consuming low power. To select the proper FET switch, the performance of the SPA antenna depending on the switch characteristics is analyzed. The fabricated antenna has 65 mm radius and 35 mm height, which shows about 15 dB front-back-ratio(FBR) at 2.6 GHz and enables eight-directional beam steering.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1646-1649
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• 2012

The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.136-142
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• 2005

In this paper, we wrote about the basic experimentation of Optical CT's temperature characteristic to measure high-current in a super-high-voltage electric power equipment which is using Faraday effect. We used the 1310[nm] Laser Diode as the light source and PIN Photodiode as receiver. For the transmission line of light, we used 30[m] single mode fiber which could maintain the state of polarization in the optical fiber. For the experiment, the temperature transformation device make by aluminium. the The range of current was from 400[A] and 1300[A] and the range of temperature was from $-40[^{\circ}C]\;to\;50[^{\circ}C]$. In a same experimental condition, magnitude increased input current increase follow by increasing proportion of input current.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.22-29
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• 2002

Usually, much harmonics are included and cause harmonic loss of motor, torque pulsation, electro-magnetic noise and shock etc. by switching function of inverter when drive induction motor variableness inside. It applied partial resonant Buck converter and three phase voltage type SPWM inverter circuit to induction motor driving system in this paper that see to solve such problem. Changed operation condition variously to do input current of circuit that propose sine-wave by unit power factor almost and capacitor supplied bringing back to life voltage by power supply arranging properly assistance diode and electric power switching. Power factor and efficiency improved as that minimize variation of input at power supply voltage polarity reverse by that add voltage reversal function. Also, by using output filter, reduced harmonic of output line to line voltage components, and introduce state space analysis and forecast operation of rectifier. Such all items confirmed validity through simulation and an experiment.

• Journal of IKEEE
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• v.24 no.3
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• pp.719-726
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• 2020

A threshold-voltage sensing circuit is proposed to compensate for pixel aging in active matrix organic light-emitting diodes. The proposed threshold-voltage sensing circuit consists of sample-hold (S/H) circuits and a single-ended successive approximation register (SAR) analog-to-digital converter (ADC) with a resolution of 10 bits. To remove a scale down converter of each S/H circuit and a voltage gain amplifier with a signl-to-differentail converter, the middle reference voltage calibration and input range calibration for the single-ended SAR ADC are performed in the capacitor digital-to-analog converter and reference driver. The proposed threshold-voltage sensing circuit is designed by using a 180-nm CMOS process with a supply voltage of 1.8 V. The ENOB and power consimption of the single-ended SAR ADC are 9.425 bit and 2.83 mW, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.479-479
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• 2012

유기발광소자는 낮은 구동전압, 저전력, 높은 명암비, 빠른 응답속도, 넓은 시야각 및 높은 박막의 특성을 가지고 있어서 차세대 평판 패널디스플레이 기술로 각광받고 있다. 하지만 청색 유기발광소자는 적색과 녹색 유기발광소자에 비해 낮은 신뢰성, 발광효율 및 색 순도의 문제점을 가지고 있어, 이를 개선하기 위한 연구가 다양하게 연구되고 있다. 청색 유기발광소자의 경우 발광층 내부로 주입되는 정공과 전자의 균형을 조절하기 위해 p-i-n 구조를 사용하거나 이리듐-유기물 합성물과 같은 인광물질의 적용하여 발광효율을 높이는 청색 유기발광소자에 대한 연구가 진행되고 있다. 하지만 정공 보조층과 청색 형광층의 도핑구조의 청색 유기발광소자에 대한 발광효율 증가 메커니즘에 관한 연구는 비교적 많이 이루어지지 않았다. 본 연구에서는 열 증착 방법을 이용하여 정공 보조층과 청색 형광층으로 구성된 이중 발광층을 사용한 청색유기발광소자의 발광효율 증가 메커니즘에 대해 연구하였다. 10%의 2,9-dimethyl-4,7-diphenyl-1,10-phenanthorlene (BCP)로 도핑된 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN)층을 발광층으로 사용한 유기발광소자, 5% MADN으로 도핑된 1, 3-bis(carbazol-9-yl)benzene (mCP) 층을 발광층으로 사용한 소자 및 10% BCP로 도핑 된 MADN 층과 5% MADN로 도핑 된 mCP층을 혼합하여 발광층으로 사용한 소자의 전류밀도-전압-발광 특성을 비교하여 청색 유기발광소자의 발광효율 증가 메커니즘을 분석하였다. 이중 발광층을 가지는 소자는 두 단일 발광층 중심부의 경계면에서 축적된 정공에 의해 발생한 쿨롱 인력으로 더 많은 전자들을 끌어들이게 되어 엑시톤 형성 및 빛 방출이 증가하였다. 이 실험의 결과는 MADN 형광물질을 가진 청색 유기발광소자의 발광효율 증가 메커니즘에 대한 이해를 높이는데 도움을 줄 수 있다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.2003-2008
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• 2012

A drive system is necessary to operate LED by an LED illumination system. Because Switched Mode Power Supply (SMPS) is higher in efficiency in the large capacity than Linear Regulator, it is used mainly and controls this in an analog form or digital method. A MCU and a DSP of the digital control central processing unit were higher in a unit price than existing analog control chip, so that an approach was not easy for application of SMPS. But it can take the earnings by it lets you integrate various digital control features like an LED illumination system in one MCU, and realizing a whole system. In this paper, we suggest the algorithm that can improve LED driving current in applying such a digital control method using low-priced type MCU.