• Title/Summary/Keyword: 전력부문

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Advances in Power Semiconductor Devices for Automotive Power Inverters: SiC and GaN (전기자동차 파워 인버터용 전력반도체 소자의 발전: SiC 및 GaN)

  • Dongjin Kim;Junghwan Bang;Min-Su Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.2
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    • pp.43-51
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    • 2023

  • In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

  • https://doi.org/10.6117/kmeps.2023.30.2.043 인용 PDF

국내외 정보

  • Korea Electrical Manufacturers Association
    • NEWSLETTER 전기공업
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    • no.95-18 s.139
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    • pp.27-47
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    • 1995

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