• Proceedings of the KSME Conference
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• 2004.11a
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• pp.404-409
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• 2004

The electrical contact resistance is here estimated using the multiscale microcontact distribution of elastic contact between rough surfaces, simulated from the Archard's model, and the electrical contact conduction theory suggested by Greenwood. These analysis confirms that the electrical contact resistance is converged to a values, larger than would be obtained if the contact spots were widely separated and hence independent. In multiscale process, the base potential is close to the value of the potential difference between the contact surface and the extremity of body, suggesting a possibility to obtain the multiscale electrical contact resistance relations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.29-32
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• 1996

AlGaAs/GaAs 에피 구조와 제조 공정에 사용될 마스크를 설계 및 제작하여, 이를 이용하여 다양한 크기의 HBT를 제작하였다. 제작될 소자의 특성에 영향 을 미치는 공정에 대해서는 단위 공정을 수행하여 발생될 수 있는 문제점들을 사전에 제거하고, 안정된 공정 조건을 확립하도록 하였다. 금속의 저항성 접촉특성 향상을 위한 단위 실험 결과, n형 및 p형 금속에 대하여 각각 3.5$\times$$10^{-6}$-$ extrm{cm}^2$와 1.0$\times$$10^{-5}$$\Omega$-$\textrm{cm}^2$의 접촉 비저항 특성을 얻었다. 또한, 제작된 HBT는 HP4145B 와 HP8510C의 장비를 이용하여 DC 및 AC 특성을 측정하였는데, 에미터 크기가 3$\times$10um$^2$인 소자의 경우, $\beta$=51, f$_{T}$= 42GHZ 및 f$_{max}$=19GHz의 특성을 얻었다.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1550-1552
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• 2003

고밀도의 트렌치 전력 MOSFET를 제작하는 데 있어서 새로운 소자의 구조와 공정을 제시하고 이차원 소자 및 공정 시뮬레이터를 이용하여 검증했다. 트렌치 게이트 MOSFET의 온-저항을 낮추기 위해 셀 피치가 서브-마이크론으로 발전할 경우 문제가 되는 소오스 영역을 확보하고자 p-base의 음 접촉을 위한 P+ 영역과 N+ 소오스 등이 트렌치의 측벽에 형성되고, 트렌치 게이트는 그 아래에 매몰된 구조를 제안했다. 시뮬레이션 결과는 항복전압이 45 V이고, 온-저항이 12.9m${\Omega}{\cdot}mm^2$로 향상된 trade-off 특성을 보였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.8
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• pp.113-120
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• 2007

This paper presents the electric shock hazards and solutions of loss of the combined protective and neutral (PEN) conductor in TN-C-S system. In order to mitigate the touch voltage on exposed-conductive-parts in a break in the PEN conductor, the touch voltages on exposed-conductive-parts in a break in the PEN conductor were experimentally investigated as a function of the ground resistances of the source grounding electrode and customer's additional grounding electrode. As a result, the equipotential bonding is one of important requirements for installations supplied by TN-C-S system. A solution of mitigating the touch voltages on exposed-conductor-parts caused by a loss of the PEN conductor would be the installation of the additional grounding electrode at the customer's service entrance. The ground resistance of additional grounding electrode necessary to limit the touch voltage to a safety voltage of less than 50[V] depends on the load and circuit parameters. In addition, the undervoltage sensing devices oner affordable solutions to detect a loss of the PEN conductor in TN-C-S system.

• Journal of Korean Tunnelling and Underground Space Association
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• v.21 no.2
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• pp.267-278
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• 2019

Variety of tunnel ahead prediction methods have been performed for safe tunnel construction during tunnel excavation. Pole-pole array among the electrical resistivity survey, which is one of the tunnel ahead prediction method, has been utilized to predict water-bearing sediments or weak zone located within 5 times of tunnel diameter. One of the most important processes is the estimation of virgin ground resistivity and it can be obtained from the following process: 1) calculation of contact area between the electrodes and the medium, and 2) assumption of the electrodes as equivalent spherical electrodes which have a same surface area with the electrodes. This assumption is valid in a small contact area and sufficient distance between the electrodes. Since the measured resistance, in general, varies with the electrode size, shape, and distance between the electrodes, it is necessary to evaluate the influence of these factors. In this study, theoretical equations were derived and experimental tests were conducted considering the electrode size, shape, and distance of cylindrical electrodes which is the most commonly utilized electrode shape. Through this theoretical and experimental study, it is known that one should be careful to use the assumption of the equivalent half-spherical electrode with large ratio between the penetrated depth and radius of the cylindrical electrode, as the error may get larger.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Electric Engineers Magazine
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• v.195 no.11
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• pp.30-34
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• 1998

가공송전선의 접지는 주로 내뢰설계에 그 목적이 있지만 전력계통의 안정도, 전력계통의 고장검출과 철탑주변의 접촉전압 및 보폭전압에도 영향을 미치고 있는 것이 사실이다. 특히 전력계통에서 지락사고가 발생할 경우 지락전류가 송전철탑에 시설되어 있는 가공지선과 대지로 분류하는 정도에 따라 지락지점에서의 대지전위 상승이 크게 좌우된다.

• 한국전기화학회:학술대회논문집
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• 2005.04a
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• pp.66-66
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• 2005

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1012-1017
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• 1999

Low resistance ohmic contacts to the Si-doped $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$(~$\times10^{19}\textrm{cm}^{-3}$) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at $950^{\circ}C$ for 90 s, which results in a specific contact resistance of $2.75\times10^{-8}\Omega\textrm{cm}^{-3}$. Interfacial reactions and surface are analyzed using x-ray diffraction and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$ produce a $\beta$-$W_2N$ phase at the interface. The SEM result shows that the morphology of the contacts is stable up to a temperature as high as $850^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.7
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• pp.56-62
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• 2018

The bus bar is an electrical connection widely used for the power supply of skyscrapers and power distribution and industrial equipment electrical panels in industrial plants. There are various materials to be considered in the design of the bus bar, such as material based on the use environment, the sectional area according to the power capacity, the length of the surface circumference, and the tightening method. Even with a bus bar manufactured to a size of sufficient power capacity in the design, if the actual tightening is incorrect, it may lead to fire due to deterioration. For these reasons, a variety of research on the temperature rise of the electrical contact point has continued. However, the temperature rise of the contacts is a consequence of the result, not a direct cause. In this paper, the influence of contact resistance on the fastening force and the overlapping section of the bus bar are investigated by measuring the change in resistance from building the specimen. A total of eight bus bar specimens were manufactured and measured. Resistance was measured by varying the clamping force and the interval between overlapping sections when the specimens were crossed. We propose a safe power connection model by analyzing the contribution of these factors to the actual contact resistance change.