• Title/Summary/Keyword: 전기품질

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Effect of PE Film Thickness on MA (Modified Atmosphere) Storage of Strawberry (Polyethylene Film 두께에 따른 딸기의 MA(Modified Atmosphere) 저장 효과)

  • 김종국;문광덕;손태화
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.22 no.1
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    • pp.78-84
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    • 1993
  • This study was conducted to investigate the effect of various polyethylene (PE) film packaging on the quality of strawberry during storage at low temperature. Gas composition in film was changed rapidly at early stage of storage and then kept at the level of 5~10% $CO_2$and 1~3% $O_2$. Weight loss and decay rate were low at 0.08mm PE film packed strawberries. Titratable acidity, pH and soluble solids were changed slightly during storage but its large difference according to film thickness was not observed. Decrease of flesh firm-ness and a value was restrained by PE film packaging. Free sugar of strawberry was composed of glucose and fructose in similar content and it was decreased a little during storage but the difference according to film thickness was not observed. The organic acids in strawberry were citric acid, malic acid, succinic acid, ascorbir acid, oxalic acid, tartaric acid and pyruvic acid and the major organic acid was citric acid. The contents of citric acid, malic acid, succinir acid and ascorbic acid were decreased and oxalic acid and tartaric arid were not changed during storage but pyruvic acid was increased in early stage and then decreased. These changes of organic acid were slight in packaged with 0.08mm PE film strawberry.

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Effects of Leaf Management during Winter Season on the Yield and Soluble Solid Contents of Fruits in Forcing Cultivation of Strawberry 'Seolhyang' (딸기 '설향' 촉성 재배 시 동절기 엽수 관리 방법이 수량 및 가용성 고형물 함량에 미치는 영향)

  • Kim, Dae-Young;Kim, Seung Yu;Lee, Sun Yi
    • Journal of Bio-Environment Control
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    • v.25 no.4
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    • pp.283-287
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    • 2016
  • This study was conducted to examine the effects of defoliation levels during winter season on the yield and soluble solid contents of fruits. To achieve this strawberry 'Seolhyang' cultivated forcingly in the year of 2013 to 2014 as well as 2014 to 2015. The three treatments include periodical removing of leaves remaining 6 fully expanded leaves, those remaining 9 leaves, and only removing of old and infected leaves during the period from early December to end of February. In the early marketable fruit yield until the end of February and total marketable fruit yield, the treatment of non-defoliation was significantly higher than those of the treatment of 6 and 9 leaves in the year of 2014 to 2015 cropping season. Soluble solid contents of fruits among January and March increased significantly as the number of leaves get higher. Soluble solid contents were higher and stable around $12^{\circ}Brix$ in the treatment of non-defoliation. Assimilation of photosynthetic products into plant tissue are insufficient due to the lack of irradiation and short day in winter season forcing cultivation of strawberry. Thus, it is considered to manage the leaves with defoliation for only old and infected leaves from December to February for increasing of fruit yield and improvement of fruit quality.

Growth and Characterization of $ZnGa_2Se_4$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)에 의한 $ZnGa_2Se_4$단결정 박막 성장과 특성에 관한 연구)

  • 장차익;홍광준;정준우;백형원;정경아;방진주;박창선
    • Korean Journal of Crystallography
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    • v.12 no.3
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    • pp.127-136
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    • 2001
  • A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

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Magnetic Properties of Chip Inductors Prepared with V2O5-doped Ferrite Pastes (V2O5 도핑한 페라이트 페이스트로 제조된 칩인덕터의 자기적 특성)

  • Je, Hae-June
    • Journal of the Korean Magnetics Society
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    • v.13 no.3
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    • pp.109-114
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    • 2003
  • The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt% $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

Yield of Paeonia Radix and Changes of Paeoniflorin Concentration in Paeonia Radix with Different Growing Stages (작약 생육시기에 따른 약근수량 및 Paeoniflorin함량 변화)

  • ;Kwang-He Kang
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.39 no.4
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    • pp.397-404
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    • 1994
  • This experiment was conducted to determine best harvesting time and observe paeoniflorin and some chemical component concentrations of 4-year-old paeonia radix in Euisung and Milyang varieties. Concentrations of paeoniflorin and some chemical components were investigated at 8 periods from Feb. to Oct. Yield of paeonia radix was investigated in Aug. 19, Sep. 18 and Oct. 17. Paeoniflorin and some chemical components were changed seriously at May as flowering time and stabilized after June. The lowest dry matter ratio was 23% and the maximum shrinkage ratio was 47% in May during all the growing stages. Especially, the difference of paeoniflorin concentrations between Euisung and Milyang was about 2%, and paeoniflorin concentrations in Milyang were higher than in Euisung variety during all the stages. Serious infection of disease in October, stem length, stem number per stock and healthful stem ratio in October were more reduced than in August. Yield of paeonia radix was not different from August to September, but that of October harvest was obviously reduced by root-decay-disease. Reasonable harvesting time in 4-year-old paeonia radix was late August to mid-September. When infected shoot rate by disease were severely high, early harvest was more stable in the yield and quality aspects.

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Study on the Property of Guided Wave Signal Analysis according to Defect Shape of Small Size (소구경 튜브 결함 형태에 따른 유도초음파 신호 해석 특성에 관한 연구)

  • Gil, Doo-Song;Ahn, Yeon-Shik;Jung, Gye-Jo;Park, Sang-Gi;Kim, Yong-Gun
    • Journal of the Korean Society for Nondestructive Testing
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    • v.32 no.4
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    • pp.410-417
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    • 2012
  • Currently domestic thermal and nuclear power plants are comprised of many type's condenser and steam generator tubes to produce the electricity of good quality. There are some methods to inspect these tubes in the event that several defects were discovered in these facilities. Among many non-destructive methods, we used guided wave to inspect the soundness of tubes, because this method is very fast to detect the defect and very simple to install the equipment and also, can inspect up to the long range at a fixed point. Also, this method has a drawback that does not detect a very small size defect. So, we made an effort to overcome this drawback through the experimentation and signal analysis according to the size and shape of the defect through the manufacture of various artificial cracks capable to generate within the small size tube in the study and we anticipate that these detect limits can be overcome along with the development of the signal processing and manufacturing technology of the sensor for the inspection.

양성 고분자로 표면 사이징된 원지에 의한 도공층의 조기 구조화 및 도공지의 물성 개선

  • 이학래;전대구
    • Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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    • 2000.11a
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    • pp.62-62
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    • 2000
  • 도공지 제조 시 적절한 표면특성을 지닌 원지를 사용하는 것은 최종 도공지 품질향상은 물론 조업성 개선에도 필수적인 요소이다. 이러한 목적을 달성하기 위해 도공원지의 표면 사이징이 실시되고 있다. 도공원지의 표면 사이정 시 양성전분을 이용할 경우 서로 반대로 하전된 전분 과 섬유 사이에 발현되는 정전기적 인력에 의해서 표면 사이정 전분의 원지로의 전분 침투가 억제되어 도공원지의 불투명도, 광택도 인쇄적성 둥의 물성 향상을 꾀할 수 있다. 또 이러한 원지를 이용하여 도공을 할 경우 음전하를 띤 도공액 구성성분과 양전하를 띤 원지 표면의 정 전기적 작용에 의해 도공액의 부동화가 촉진될 수 있으므로 도공액의 표면 잔류성이 향상되 며, 도공층 공극 구조 개선에 따른 광학적인 성질의 개선도 기대할 수 있을 것으로 기대된다. 본 연구에서는 양성전분으로 표면 사이정 된 원지를 사용한 도공지와 기존의 산화전분을 이용하여 표면 사이정한 원지를 이용하여 제조된 도공지의 특성을 비교하였다. 또 양성전분에 의한 표면 사이징 효과를 보다 극대화하고 도공안료와 원지 표면과의 반응성을 증가시키기 위 해 양이온성 폴리머를 표면 사이정 시 첨가하여 표면 사이칭을 하는 방법을 평가하였다. 아울 러 양성전분과 도공안료와의 반응에 따라 도공층의 부동화가 촉진될 수 있다는 근거를 구명하 기 위해 레올로지적인 접근을 시도하였으며, 도공층의 공극 특성 관찰, 광산란 및 광홉수 계수 측정 등을 통해 양성전분으로 표면 사이정된 도공층의 구조적 특성을 분석하였다. 그 결과 산화전분에 비해 양성전분으로 표면 사이징한 원지의 경우 도공지의 불투명도가 높게 나타났다. 이는 양성전분으로 표면 사이정한 원지를 사용한 경우 도공층의 구조가 광 산란계수를 향상시킬 수 있도록 변화되었기 때문임을 확인하였다. 표면 사이징시 양이온성 폴리머를 첨가할 경우 불투명도 개선에 상당한 효과가 있었으며, 전분 대비 1% 이하의 첨 가량에서도 어느 정도의 개선이 가능하였다. 양성전분에 의한 도공액의 조기 부동화가 발현 된다는 것을 구명하기 위해서 도공액의 점탄성적 평가를 실시한 결과 산화전분에 비해 양성 전분 상에서 도공액의 storage modulus가 높고 critical strain point 역시 높은 값을 나타낸 다는 것을 확인하였다. 이는 양성전분과 도공액, 특히 클레이와의 정전기적 인력에 의한 반 응 결과로 생각된다. 양성전분을 이용한 도공원지의 표면 사이정 기술은 특히 평량이 낮은 도공지의 경우 수분 의 침투를 억제함으로써 도공공정에서의 지절을 감소시킬 뿐 아니라 불투명도 등 광학적 성질 을 개선시키고, 표면 커버리지를 향상시키는 효과를 나타낼 것으로 기대된다.

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Aerodynamic Characteristics and Galloping Possibility of Ice Accreted Transmission Conductors by Wind Tunnel Tests (풍동실험을 통한 착빙 가공송전선의 공력 특성 측정 및 갤러핑 발생 분석)

  • Lee, Dooyoung;Goo, Jaeryang;Park, Sooman;Kim, Donghwan
    • KEPCO Journal on Electric Power and Energy
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    • v.3 no.2
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    • pp.79-88
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    • 2017
  • In this paper, the wind tunnel test for the measurement of aerodynamic characteristics of transmission conductors with asymmetric sections is described. A single conductor model and bundled conductor models with ice accreted shapes are tested both in steady and turbulent flow, and the aerodynamic coefficients are acquired. Transmission conductor galloping is a kind of wind-induced vibration which is characterized by primarily vertical oscillation with a very low frequency and a high amplitude. It is well known that transmission conductor galloping is generally caused by moderately strong, steady winds when a transmission conductor has an asymmetric cross-section shaped by accreted ice. Galloping should be considered from the design stage of overhead lines because it can cause severe wear and fatigue damage to attachments as well as transmission conductors. It is reported that there have been normally 20 events of galloping per year in Korea, which may be followed by serious consequences in the electric power system. Therefore, this research is performed to measure aerodynamic characteristics of ice accreted transmission conductors to understand and control transmission conductor galloping so that it would help to prevent unexpected failures and reduce the maintenance costs caused by galloping.

Study for Multi Channel Radiation Detector Using of Microfilm and Carbon Electrode (탄소막 마이크로필름을 이용한 다채널 전리함 개발에 관한 연구)

  • Shin Kyo Chul;Yun Hyong Geun;Jeong Dong Hyeok;Oh Yong Kee;Kim Jhin Kee;Kim Ki Hwan;Kim Jeung Kee
    • Progress in Medical Physics
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    • v.16 no.3
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    • pp.111-115
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    • 2005
  • We have designed the multi channel detector for the quality assurance of clinical photon beams. The detector was composed of solid phantom inserted by six plane-parallel ionization chambers at different depth. The chamber as a mini plane parallel chamber was made of carbon coated microfilms. In this study the electrical characteristics of the six chambers in the solid phantom were evaluated using 6 MV photon beam. The leakage currents were less than 0.5 pA, reproducibility was less than 0.5$\%$, linearity was less than 0.5$\%$, and dose rate effect was less than 0.7$\%$. In addition the effect of dose variation from other chambers was estimated to maximum 0.8$\%$ approximately. The developed detector can be used for quality determination in output dosimetry or measurement of percentage depth dose approximately for clinical photon beam.

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PECVD를 이용한 2차원 이황화몰리브데넘 박막의 저온합성법 개발

  • Kim, Hyeong-U;An, Chi-Seong;Arabale, Girish;Lee, Chang-Gu;Kim, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.274-274
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    • 2014
  • 금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$$150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.

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