• Title/Summary/Keyword: 전기특성

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Influence of AZO Thin Films Grown on Transparent Plastic Substrate with Various Working Pressure and $O_2$ Gas Flow Rate (공정 압력과 산소 가스비가 투명 플라스틱 기판에 성장시킨 AZO 박막에 미치는 영향)

  • Lee, Jun-Pyo;Kang, Seong-Jun;Joung, Yang-Hee;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.15-20
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    • 2010
  • In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.

Analysis for Buffer Leakage Current of High-Voltage GaN Schottky Barrier Diode (고전압 GaN 쇼트키 장벽 다이오드의 완충층 누설전류 분석)

  • Hwang, Dae-Won;Ha, Min-Woo;Roh, Cheong-Hyun;Park, Jung-Ho;Hahn, Cheol-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.2
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    • pp.14-19
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    • 2011
  • We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

Spawning Character and Early Life History of the Endangered Korean Dwarf Loach, Kichulchoia brevifasciata (Teleostei: Cobitidae) (멸종위기종 좀수수치 Kichulchoia brevifasciata의 산란기 특징 및 초기생활사)

  • Ko, Myeong-Hun;Bang, In-Chul
    • Korean Journal of Ichthyology
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    • v.26 no.2
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    • pp.89-98
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    • 2014
  • Eggs development and early life history of the endangered Korean dwarf loach, Kichulchoia brevifasciata (Teleostei: Cobitidae) was investigated to provide basic information regarding biological characteristics and restoration. Adult fish specimens were sampled using a spoon net at Geurnsan-myeon, Goheung-gun, Jeollanam-do, Korea from June to July 2011. Since, spawning characteristics were analyzed, and females were induced to spawn by injecting Ovaprim (0.5 mL/kg) and their eggs were artificially fertilized with sperms by the dry method in the laboratory. Total length of mature female were 46~76 mm with GSI $9.6{\pm}3.77%$, and total length of mature male was 42~52 mm with GSI $3.5{\pm}1.04%$. Sex ratio (♂/♀) was 0.10, and there were no secondary sexual characteristics. The number of mature eggs was averaged $60{\pm}28.7$ per female. The lemon yellow eggs were slightly adhesive $1.46{\pm}0.07mm$ in diameter. The embryo hatched approximately 66 h after fertilization at $25^{\circ}C$, and the hatched larvae were averaged $5.5{\pm}0.07mm$ in total length (TL). At 6 days after hatching, the larvae averaged $9.0{\pm}0.29mm$(TL) and their yolk sac was completely absorbed. At 17 days after hatching, they entered the juvenile stage and reached $12.6{\pm}0.24mm$ (TL). At 80 days after hatching, the band patterns and external form of the juveniles were similar to those of adults, and they averaged $33.0{\pm}2.19mm$(TL).

Egg Development and Early Life History of Endangered Species Gobiobotia naktongensis (Pisces: Cyprinidae) (멸종위기어류 흰수마자 Gobiobotia naktongensis (Pisces: Cyprinidae)의 난발생 및 초기생활사)

  • Ko, Myeong-Hun;Lee, Ill-Ro;Bang, In-Chul
    • Korean Journal of Ichthyology
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    • v.25 no.1
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    • pp.9-16
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    • 2013
  • Egg development and early life history of the endangered species, Gobiobotia naktongensis were investigated to provide basic information regarding biological characteristics and restoration. Eggs were obtained from the females with Ovaprim (0.5 mL/kg) injecting and then fertilized using the dry method in the laboratory. Number of spawned eggs were $1,015{\pm}199$. Spawned eggs were strongly adhesive, opaque and grayish and measured $0.74{\pm}0.08mm$ (mean${\pm}$SD) in diameter. Fertilized egg size continuously increase until $2.94{\pm}0.10mm$ for 9 h 30 min at $23^{\circ}C$. Fertilized eggs hatched 26 h after fertilization, and newly hatched larvae an average were $3.4{\pm}0.07mm$(TL). The yolk sacs of the larvae were of most absorbed of 3 days after hatching and $4.4{\pm}0.1mm$ (TL). About at 13 days after hatching, they became to juvenile stage and reached $16.8{\pm}0.50mm$ (TL). At 80 days after hatching, the band patterns and external form of juveniles were similar to those of adults, and they averaged $27.7{\pm}2.32mm$(TL).

Study on $CdIn_{2}Te_{4}$ single crystal growth and electrical characteristics ($CdIn_{2}Te_{4}$ 단결정 성장과 전기적 특성)

  • 홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.1
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    • pp.32-43
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    • 1996
  • A $CdIn_{2}Te_{4}$ single crystal was grown by modified veritical bridgman method. The $CdIn_{2}Te_{4}$ single crystal was evaluated to be tetragonal by the powder method. The $CdIn_{2}Te_{4}$ single crystal was confirmed to be grown with its c axis along the lengthe of the boule by the Laue reflection method. Hall effect of $CdIn_{2}Te_{4}$ single crystal was estimated by van der pauw method from 293 K to 30 K. Hall data of the sample perpendicular to c axis was $n=8.75{\times}10^{23}electrons/m^{3},\;R_{H}=7.14{\times}10^{-5}m^{3}/C,\;{\sigma}=176.40{\omega}^{-1}m^{-1},\;{$\mu}=3.41{\times}10^{-2}m^{2}/V.s$ and the sample parallel to c axis was $n=8.61{\times}10^{23}electrons/m^{3},\;R_{H}=7.26{\times}10^{-5}m^{3}/C,\;{\sigma}=333.38{\omega}^{-1}m^{-1}\;and\;{$\mu}=2.42{\times}10^{-2}m^{2}/V.s$ for room temperature. The value of Hall coefficient on sample perpendicular or parallel to c axis were positive. There $CdIn_{2}Te_{4}$ single crystal was p-type semiconductor.

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Structural and Electrical Properties of Amorphous 2Ti4O12 Thin Films Grown on TiN Substrate (TiN 기판 위에 성장시킨 비정질 BaSm2Ti4O12 박막의 구조 및 전기적 특성 연구)

  • Park, Yong-Jun;Paik, Jong-Hoo;Lee, Young-Jin;Jeong, Young-Hun;Nahm, Sahn
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.169-174
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    • 2008
  • The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

Refractive index change of nonlinear polymer thin films induced by corona poling and quantitative evaluation of poling effect (코로나 극성배향이 비선형 고분자박막의 복소굴절율에 미치는 영향 및 배향효과의 정량화)

  • 길현옥;김상준;방현용;김상열
    • Korean Journal of Optics and Photonics
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    • v.10 no.3
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    • pp.181-187
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    • 1999
  • We prepared the side-chain type nonlinear optical NPP(N-(6-nitrophenyl)-(L)-prolinol) polymer films by spin coating method. Ellipsometric spectra were in situ collected by using spectroscopic phase modulated ellipsometer while the NPP polymer films were being corona poled at the temperature above glass transition. We calculated film thickness and the refractive index dispersion by modeling the spectro-ellipsometry data in transparent region. We also calculated the refractive index and the extinction coefficient of the polymer films by numerically inverting the spectro-ellipsometry data in absorbing region, while the previously determined film thickness was used. The independently determined extinction coefficient spectra from the analysis of transmission spectra were compared with those by spectro-ellipsometry and they showed an excellent agreement with each other. From the analysis of the complex refractive index change of the NPP polymer thin films induced by the corona poling, we could determine the vertical complex refractive index and the horizontal complex refractive index separately. Using the volume fraction of the vertical component f⊥, the degree of poling of poled NPP polymer films was quantitatively addressed. It is suggested that the present method can be used to quantitatively address the degree of poling in an absolute manner and to depth profile the poled fraction of thick polymer films. It will be useful to understand the structural change of polymer films and hence the poling mechanism during the poling process.

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Purification and Characterization of ($Ca^{2+}$+$Mg^{2+}$)-ATPase of Sarcoplasmic Reticulum from Rat Skeletal Muscle (쥐 근소포체의 ($Ca^{2+}$+$Mg^{2+}$)-ATPase의 분리정제와 그 효소특성에 관하여)

  • Lee, Jong-Soon;Ha, Doo-Bong;Chung, Chin-Ha
    • The Korean Journal of Zoology
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    • v.28 no.1
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    • pp.31-43
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    • 1985
  • The $(Ca^{2+}+Mg^{2+})$-ATPase has been purified homogeneously from sarcoplasmic reticulum of rat skeletal muscle by sucrose density gradient centrifugation. The purified enzyme has a molecular weight of 115,000 as judged by polyacrylamide gel electrophoresis in the presence of sodium dedecyl sulfate, and therefore has the same size of the enzyme in rabbit and chick skeletal muscle. $Ca^{2+}, Mg^{2+}, Fe^{2+}, Co^{2+}, and Mn^{2+}$ at 50 $\\muM$ show stimulatory effect on the ATP-ase, while $Zn^{2+}, Cu^{2+}, and Hg^{2+}$ inhibit it at the same concentration. The ATPase activity is insensitive to antimalarial drugs such as quinine and quinacrine, but is sensitive to inhibition by p-hydroxymecurie benzoate and phenylmethylsulfonylfluoride. The enzyme has optimum pH of 6 to 7 and Km value for ATP is estimated to be 98 $\\muM$. Thus, a number of biochemical properties of this enzyme appear to be different from those of the enzyme that have been isolated from rabbit skeletal muscle. The $(Ca^{2+}+Mg^{2+})$-ATPase appears to be selectively degraded in microsomal fraction. The activity of metalloendoprotease is evident in the microsomal preparation when assayed by radioactively labeled protein substrate, such as $^{3}H-casein and $^{125}I$-insulin. However, it is presently unclear whether the metalloendoprotease is responsible for the degradation of the $(Ca^{2+}+Mg^{2+})$-ATPase.

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Analysis of the Risk of Heat Generation due to Bolt Loosening in Terminal Block Connector Parts (볼트풀림에 의한 터미널 블록의 접속부 발열 위험성 분석)

  • Yeon, Yeong-Mo;Kim, Seung-Hee
    • Fire Science and Engineering
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    • v.34 no.3
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    • pp.67-75
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    • 2020
  • In this study, the risk of heat generation due to normal and overload currents that vary with the abnormal loosening angle of wire-connecting bolts were identified. The risks were analyzed based on the thermal characteristics to minimize the carbonization accidents of terminal blocks inside distribution panels typically used in industrial sites. We applied a method for measuring the heating temperature and temperature variations in the terminal blocks in real-time by installing a resistance temperature detector sensor board in the terminal block. The experimental results showed that the terminal block model with a low-rated current exhibited a higher heating temperature, thus, confirming the need to select the terminal block capacity based on load currents. Additionally, the higher the rated current of the terminal block with a high-rated current and the higher the degree of loosening, the faster the carbonization point. Such heating temperature monitoring enabled real-time thermal temperature measurement and a step-by-step risk level setting through thermal analysis. The results of the measurement and analysis of carbonization risks can provide a theoretical basis for further research regarding the risk of fire due to carbonization. Furthermore, the deterioration measurement method using the temperature sensor board developed in this study is widely applicable to prevent fires caused by poor electrical contact as well as risk-level management.

Analysis of academic achievements on above-level testing of newly entering students in science specialized high schools (상급 학년 수준 시험을 활용한 과학고 신입생들의 학업성취도 특성 연구)

  • Ahn, Tae Hwan;Park, Kyung Hee
    • Journal of Gifted/Talented Education
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    • v.25 no.1
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    • pp.119-138
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    • 2015
  • This study analyzed the academic achievements on above-level testing of mathematics, physics, chemistry, and English in newly entering students of science specialized high schools. It can be expected that newly students of science high specialized schools have reached ceiling level in the middle school mathematics and science academic scores. Above-level testing(or off-level testing) is a test tool used to evaluate student's ability which are above-grade level. In this study, above-level testing tools were used to develop the same type examination paper of the 2013 Korean College Scholastic Ability Test(CSAT) in mathematics, physics, chemistry, and English. The conclusions of this study were as follow: First, the academic achievement level of science specialized high school freshmen were higher the average level of general high school senior because that over 50% of them are within the 5 grade of CSAT in mathematics, physics, and chemistry. In English, 19.3% science specialized high school freshmen have reached within the 5 grade of CSAT. Second, as a result of examining characteristics of academic achievement with respect to units of subjects, in mathematics, it was showed that the academic achievement of 'continuity and limit of a function' unit was higher, 'statistics' unit was lower. In physics, the academic achievement of 'Electricity and Magnetism' unit was higher, 'Waves and particles' unit was lower. In chemistry, the academic achievement of 'compounds in life' unit was higher, 'Air' unit was lower. In English, the academic achievement of 'practical sentence' of reading area was higher, 'Sentence' of writing area was lower. In conclusion, above-level testing provided a good strategy for identifying and determining appropriate programming interventions for gifted students who are two or more grade levels above their age-mates in achievements, aptitude, or ability.