• Title/Summary/Keyword: 전기전도 구배

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Experimental investigation of improve characteristics of MBP (MBP의 접촉저항 개선 방법)

  • Na, Tae-Gyeong;Kim, Hong-Seok;Baek, Jeong-Sik;Seong, Dong-Muk;Kim, Tae-Min
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.150-152
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    • 2007
  • 직렬로 연결 된 다층의 단위전지 집합으로 구성되는 고체 고분자 연료전지의 적층전지는 에서 발생 할 수 있는 단위전지 간 전압손실과 압력구배를 최소화하기 위해 적층전지 내의 단위전지 외에 부품 및 재료를 추가하여 전압손실과 압력구배를 줄이는 방법에 대한 연구를 진행하였다. 체결압 구배를 최소화하기 위해 부드러운 층으로 이루어진 외곽부분과 딱딱한 층으로 이루어진 중심부를 가지는 필름을 전류집합체 뒤쪽에 첨가하였고, 분리판과 전류집합체 사이에서 발생 할 수 있는 전압손실을 방지하기 위해 높은 전기 전도성을 가지며, 평활도를 유지 할 수 있는 재료로 구성 된 복합층을 전류집합체와 분리판 사이에 첨가하였다. 압력구배 측정 및 다층전지 성능테스트 중 단전지간 전압손실을 측정하여 기 제작 된 첨가층들에 대한 영향의 정도를 파악하였다.

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Visualization of Electro-osmotic Flow Instability in a T-shape Microchannel (T자형 마이크로 채널 내부 전기삼투 유동의 불안정성 가시화)

  • Han, Su-Dong;Lee, Sang-Joon
    • Journal of the Korean Society of Visualization
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    • v.3 no.2
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    • pp.45-50
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    • 2005
  • Electro-osmotic flow (EOF) instability in a microchannel has been experimentally investigated using a micro-PIV system. The micro-PIV system consisting of a two-head Nd:Yag laser and cooled CCD camera was used to measure instantaneous velocity fields and vorticity contours of the EOF instability in a T-shape glass microchannel. The electrokinetic flow instability occurs in the presence of electric conductivity gradients. Charge accumulation at the interface of conductivity gradients leads to electric body forces, driving the coupled flow and electric field into an unstable dynamics. The threshold electric field above which the flow becomes unstable and rapid mixing occurs is about 1000V/cm. As the electric field increases, the flow pattern becomes unstable and vortical motion is enhanced. This kind of instability is a key factor limiting the robust performance of complex electrokinetic bio-analytical devices, but can also be used for rapid mixing and effective flow control fer micro-scale bio-chips.

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Dielectrophoresis for Control of Particle Transport: Theory, Electrode Designs and Applications (입자 이동 제어를 위한 유전영동: 이론, 전극 구조 및 응용분야)

  • Lee, Minji;Kim, Ji-Hye;Koo, Hyung-Jun
    • Korean Chemical Engineering Research
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    • v.57 no.2
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    • pp.149-163
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    • 2019
  • Under non-uniform electric field, a directional force along the electric field gradient is applied to matter having permanent or induced dipoles. The transport of particles by the directional force is called dielectrophoresis (DEP). Since the strength and direction of the DEP force depend on parameters, such as permittivity and conductivity of particles and surrounding media, and frequency of the applied AC electric field, particle can be precisely manipulated by controlling the parameters. Moreover, unlike electrophoresis, DEP can be applied to any particles where dipole is effectively induced by electric field. Such a DEP technique has been used in various fields, ranging from microfluidic engineering to biosensor and microchip research. This paper first describes the fundamentals of DEP, and discusses representative microelectrode designs used for DEP study. Then, exemplary applications of DEP, such as separation, capture and self-assembly of particles, are introduced.

Crystalline Growth Properties of Diamond Thin Film Prepared by MPCVD

  • Park Soo-Gil;Kim Gyu-Sik;Einaga Yasuaki;Fujishima Akira
    • Journal of the Korean Electrochemical Society
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    • v.3 no.4
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    • pp.200-203
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    • 2000
  • Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

Construction and Performance of Magnetically Shielded Room for Biomagnetic Applications (생체자기계측을 위한 자기차폐실의 설치 및 특성)

  • 이용호;권혁찬;김진목;임청무;이상길;박용기;박종철
    • Journal of the Korean Magnetics Society
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    • v.6 no.4
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    • pp.264-271
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    • 1996
  • A magnetically shielded room has been constructed for biomagnetic applications. The room has internal dimensions of $2\;m(length){\times}2\;m(width){\times}2.5\;m(height)$ and it consists of high permeability Mumetal and high conductivity alummum, utilizing ferromagnetic shielding and eddy current shielding. The de shielding factor around the center of the room is above 60 dB, and the ac shielding factors at 1 and 10 Hz are larger than 60 and 80 dB, respectively. The internal magnetic field noise at 1 Hz is $500\;fT/{\sqrt}Hz$ and at 10 Hz is $100\;fT/{\sqrt}Hz$, and the field gradient noise at 1 Hz is below $7\;fT/cm{\sqrt}Hz$. Successful measurements of cardiomagnetic fields usmg SQUID magnetometer and neuromagnetic fields using SQUID gradiometer have been done.

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Growth of 6H-SiC Single Crystals by Sublimation Method (승화법에 의한 6H-SiC 단결정 성장)

  • 신동욱;김형준
    • Korean Journal of Crystallography
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    • v.1 no.1
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    • pp.19-28
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    • 1990
  • 6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

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