• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.63-68
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• 2019

Dielectric and piezoelectric properties of PIN-PMN-PT piezoelectric single crystals with variation of temperature and compressive stress were investigated. The crystal phase of the single crystal was changed from the ferroelectric rhombohedral structure to tetragonal structure in the 110℃ region and from the tetragonal structure to the paraelectric cubic structure in the 190℃ region. The piezoelectric constant and relative dielectric constant were calculated from the rate of change of polarization and displacement with the application of electric field, which was similar to the value measured from the instrument. As the compressive stress applied to the sample increased, the piezoelectric constant d₃₃ and relative dielectric constant values tended to increase. When the compressive stress applied to the sample at 5℃ was 60 MPa, the d₃₃ was calculated as 4,500 pC/N. At 60℃, the relative dielectric constant of 62000 was calculated when the compressive stress applied to the sample was 40 MPa. The increase in piezoelectric constant and relative dielectric constant when the compressive stress increased could be attributed to the phase transition from the rhombohedral structure to orthorhombic.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.448-452
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• 2001

The ZnS:Cu,Cl thick film electroluminescent devices with the stacking type(separated with phosphors and insulator layers) and the composite type (mixed with phosphor and insulator materials) emission layers were fabricated on ITO/glass substrates by the screen printing methods. The opical and electrical properties were investigated as fundations of applied voltages and frequencies. In the stacking type, the luminance was about 58 cd/$\m^2$ at the applied voltage of 400Hz, 200V and increased to 420 cd/$\m^2$ with increasing the frequency to 30Hz. For the composite type devices, the threshold voltage was 45V and the maximum luminance was 670 cd/$\m^2$ at the driving condition of 200V, 30Hz. The value of luminance of the composite type device showed 1.5 times higher than that of stacking type device. The main emission peak was 512 nm of bluish-green color at 1Hz frequency below and shifted to 452 nm in the driving frequency over 5Hz showing the blue omission color. There were no distinct differences of the main emission peaks and color coordinate for both samples.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.65-74
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• 1993

A miniature size electrostatic induction motor has been fabricated and studied with emphasis on the role of the surface resistivity, the relative dielectric constant and the charge relaxation time constant of the rotor surface materials and the rotor liner materials, which, however, control the surface charge induction and relaxation on the rotor material surface and the field intensity between the rotor and the stator of the motor. It is found that the surface resistivity and/or the relative dielectric constant, and the charge relaxation time constant of the rotor surface material enfluenced significantly to motor speed controlled by the surface charge induction and relaxation on the rotor surface depending on the applied voltage and/or frequency changing. The resistivity of the rotor liner material is also found to be effected to the motor speed greatly by control of the field intensity between the rotor and the stator and of the surface charge distribution of the induced charge on the rotor. As a result, a maximum no load rotor speed of the motor tested was about 5500 rpm at the applied voltage of 4.5 kV and the frequency of 220 Hz for the case of the rotor surface material of $BaTiO_{3}$ 80% in the resin binder layered on the copper-foil rotor liner material.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.5
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• pp.1-6
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• 2019

Organic dye-doped silica nanoparticles are used as a promising nanomaterials for bio-labeling, bio-imaging and bio-sensing. Fluorescent silica nanoparticles(NPs) have been synthesized by the modified $St{\ddot{o}}ber$ method. In this study, dye-free fluorescent silica NPs of various sized were synthesized by Sol-Gel process as the modified $St{\ddot{o}}ber$ method. The functional material of APTES((3-aminopropyl)triethoxysilane) was added as an additive during the Sol-Gel process. The as-synthesized silica NPs were calcined at $400^{\circ}C$ for 2 hours. The surface morphology and particle size of the as-synthesized silica NPs were characterized by field-emission scanning electron microscopy. The fluorescent characteristics of the as-synthesized silica NPs was confirmed by UV lamp irradiation of 365 nm wavelength. The photoluminescence (PL) of the as-synthesized silica NPs with different size was analyzed by fluorometry. As the results, the as-synthesized silica NPs exhibits same blue fluorescent characteristics for different NPs size. Especially, as increased of the silica NPs size, the intensity of PL was decreased. The blue fluorescence of dye-free silica NPs was attributed to linkage of $NH_2$ groups of the APTES layer and oxygen-related defects in the silica matrix skeleton.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.301-313
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• 2021

Theoretical background for the meaning of various piezoelectric properties can be easily found in a number of textbooks and academic papers. In contrast, how they are actually measured and characterized are rarely described, though this information would be the most important especially to the researchers who just started working on the field. It follows that this report was intended to provide a practical guidance for measuring basic but essential properties of ferroelectric-based piezoelectric materials. The discussion begins with how to measurement dielectric properties such as dielectric permittivity and loss (dissipation factor), followed by piezoelectric properties such as piezoelectric constants, electromechanical coupling factor, and quality factor as well as ferroelectric features, i.e., electric field dependent polarization hysteresis. Though our discussion here is limited to the techniques that are already well-standardized, it is expected to make a seed to be developed into more challenging and creative ones.

• Korean Journal of Environmental Biology
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• v.38 no.4
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• pp.554-562
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• 2020

Tremex fuscicornis (Siricidae), known as the xylophagous horntail, and Leucospis japonica (Leucospidae), known as the parasitoid wasp, are wood-boring wasps belonging to the order Hymenoptera. These insects are interesting sources of biological inspiration for the development of drilling mechanisms. To study the biomimicry aspects, the morphological characters of the ovipositor of T. fuscicornis and L. japonica were analyzed using a stereoscopic microscope, a field emission scanning electron microscope, and an optical microscope. There were many differences in the ovipositors between the two species, such as shape, length, surface structure, and arrangement of the teeth. Evenly arranged teeth were developed at the tip of both the dorsal valve and the ventral valve of the ovipositor of T. fuscicornis and looked like a rotating drill bit. In contrast, in L. japonica, the teeth, which looked like a saw, were found only on the ventral valve. Moreover, the tip of the ovipositor of T. fuscicornis was symmetrically divided into four parts, while that of L. japonica was divided into three parts having a 2:1:1 ratio. However, in the case of T. fuscicornis, after the 14th tooth, four parts melded into three parts maintaining a 2:1:1 ratio, and a dovetail joint was found on the horizontal cross-section of the ovipositor that allowed vertical movement for making a hole. These morphological differences of the ovipositor may be due to the insects' lifestyles and phylogenetic distance. Finally, zinc was commonly found at the tip of the ovipositors of both species, a probable result of ecological adaptation created by drilling wood.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.425-426
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• 2013

IIIN계 물질 기반의 광 반도체는 직접 천이형 넓은 밴드갭 구조를 갖고 있기 때문에 적외선부터 가시광선 및 자외선까지를 포함한 폭 넓은 발광파장 조절이 가능하여 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있다. 일반적인 청색 및 녹색 발광영역의 활성층으로는 InGaN/GaN 다중양자우물구조를 사용하고 있으나, 장파장의 녹색 발광을 얻기 위해서는 인듐의 함유량이 증가하여야 한다. 하지만, 인듐의 함유량이 증가함에 따라서 InGaN/GaN 다중양자우물 구조내에서 인듐의 편석현상의 발생이 용이하게 되어 계면 특성을 저하할 뿐 아니라, 비발광 센터를 증가하여 발광 효율을 급격히 감소시키는 원인이 되고 있다. 또한, InGaN과 GaN의 큰 성장온도의 차이에 따라 800도 부근의 저온 영역에서 성장된 InGaN층이 1,000도 이상의 고온 영역에서 GaN층이 성장시 InGaN층의 열화 현상이 급격히 발생되고 있다. 이를 억제하기 위해서 금속유기화학증착법의 성장 변수 최적화, 응력제어, 도핑 등의 편석 억제기술 및 보호층이 사용되고 있다. 본 연구에서는 인듐함유량이 증가된 녹색 InGaN/GaN 다중양자우물구조에서 InGaN 우물층 상하부에 도입된 GaN 보호층에 따라 발생되는 양자우물구조의 광학 및 결정학적 특성 분석을 통해 GaN 보호층의 역할을 분석하고자 한다. 본 연구에서는 금속유기화학증착장치를 이용하여 사파이어 기판위에 GaN 템플릿을 성장하고, n-형 GaN, InGaN/GaN 다중양자우물구조 및 p-형 층을 성장하였다. 앞선 언급하였듯이, InGaN/GaN 다중양자우물구조내에 GaN 보호층의 역할을 규명하기 위하여 샘플 A의 경우는 보호층이 전혀 없는 구조이고, 샘플 B의 경우는 InGaN 우물층의 상단부에만, 샘플 C의 경우에는 우물층 상부 및 하단부 모두에 약 2.0 nm 두께의 GaN 보호층을 형성하였다. 이 보호층의 유무에 따른 다중양자우물구조의 계면 특성을 확인하기 위한 X-선 회절을 이용하였고, 광학적 특성을 확인하고 상온 포토루미네선스법을 이용하여 녹색 발광 파장의 변화 및 발광세기를 관찰하였다. 우선적으로, 상온 포토루미네선스법을 이용하여 각 샘플의 발광특성을 확인한 바 상하부 모두에 GaN 보호층이 존재하는 샘플 C의 경우 약 510 nm 부근에서 발광이 관찰되었지만, 상단부에 GaN 보호층이 존재하는 샘플 B는 약 495 nm영역에 발광이 확인되었다. 특히, 전혀 보호층이 존재하지 않는 샘플 A의 경우 약 440 nm에서 발광하는 현상을 관찰하였다. 이는 우물층 상단부 및 하단부에 존재하는 GaN 보호층이 In의 확산을 억제하는 것으로 판단된다. 또한, 발광파장 및 세기를 확인한 바, 보호층의 존재하지 않을수록 단파장화가 발생함에도 불구하고 발광세기는 급격히 약해지는 것으로 보아 계면특성이 저하되어 비발광센터가 증가되는 것으로 판단된다. 이를 구조적으로 확인하기 위하여 X-선 회절법을 통한 ${\omega}$/$2{\Theta}$ 스캔의 결과는 In의 0차 피크가 GaN 보호층이 없을 경우 GaN의 피크 방향으로 이동하는 것으로 보아 GaN 보호층은 우물층 성장 후 GaN 장벽층을 성장하기 위해 온도를 증가시키는 과정에서 In의 확산되는 것으로 판단된다. 또한, 하부 GaN 보호층의 경우 GaN 장벽층 성장 후 온도를 감소시키는 과정에서 성장되므로, 우물층으로부터 In의 탈착현상이 아닌 장벽층과의 상호 확산으로 판단된다. 또한, 계면특성을 확인하기 위해 InGaN의 X-선 위성 피크를 확인한 바 샘플 A의 경우 매우 넓고 약한 피크가 관찰된 반면, 보호층이 존재하는 샘플 B와 C의 경우 강하고 얇은 피크가 확인되었다. 이는 GaN 보호층의 도입으로 인해 계면특성이 향상되는 것으로 판단된다. 따라서, 우리는 InGaN/GaN 다중양자우물구조에서 GaN 보호층은 상부의 열화 억제 뿐아니라, 하부의 장벽층 및 우물층 사이의 상호확산을 억제하는 GaN 보호층의 도입을 통하여 우수한 계면 특성 및 비발광센터의 억제를 얻을 수 있을 것으로 생각되며, 이는 향후 GaN계 발광다이오드의 전계 발광특성을 증가하여 우수한 발광소자를 개발할 수 있을 것으로 기대된다.