• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.458-463
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• 2019

Palladium (Pd) is widely used as a catalyst and noxious gas sensing materials. Especially, various researches of Pd based hydrogen gas sensor have been studied due to the noble property, Pd can be adsorbed hydrogen up to 900 times its own volume. In this study, palladium oxide (PdO) nanostructures were grown on Si substrate ($SiO_2(300nm)/Si$) for 3 to 5 hours at $230^{\circ}C{\sim}440^{\circ}C$ using thermal chemical vapor deposition system. Pd powder (source material) was vaporized at $950^{\circ}C$ and high purity Ar gas (carrier gas) was flown with the 200 sccm. The surface morphology of as-grown PdO nanostructures were characterized by field-emission scanning electron microscopy(FE-SEM). The crystallographic properties were confirmed by Raman spectroscopy. As the results, the as-grown nanostructures exhibit PdO phase. The nano-cube structures of PdO were synthesized at specific substrate temperatures and specific growth duration. Especially, PdO nano-cube structrures were uniformly grown at $370^{\circ}C$ for growth duration of 5 hours. The PdO nano-cube structures are attributed to vapor-liquid-solid process. The nano-cube structures of PdO on graphene nanosheet can be applied to fabricate of high sensitivity hydrogen gas sensor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.5
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• pp.81-86
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• 2019

Metal oxide/graphene composites have been known as promising functional materials for advanced applications such as high sensitivity gas sensor, and high capacitive secondary battery. In this study, tin dioxide ($SnO_2$) nanostructures were grown on chemically synthesized graphene nanosheets using a two-zone horizontal furnace system. The large area graphene nanosheets were synthesized on Cu foil by thermal chemical vapor deposition system with the methane and hydrogen gas. Chemically synthesized graphene nanosheets were transferred on cleaned $SiO_2$(300 nm)/Si substrate using the PMMA. The $SnO_2$ nanostuctures were grown on graphene nanosheets at $424^{\circ}C$ under 3.1 Torr for 3 hours. Raman spectroscopy was used to estimate the quality of as-synthesized graphene nanosheets and to confirm the phase of as-grown $SnO_2$ nanostructures. The surface morphology of as-grown $SnO_2$ nanostructures on graphene nanosheets was characterized by field-emission scanning electron microscopy (FE-SEM). As the results, the synthesized graphene nanosheets are bi-layers graphene nanosheets, and as-grown tin oxide nanostructures exhibit tin dioxide phase. The morphology of $SnO_2$ nanostructures on graphene nanosheets exhibits complex nanostructures, whereas the surface morphology of $SnO_2$ nanostructures on $SiO_2$(300 nm)/Si substrate exhibits simply nano-dots. The complex nanostructures of $SnO_2$ on graphene nanosheets are attributed to functional groups on graphene surface.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.11
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• pp.1484-1491
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• 2020

Since the slot line transmits electric and magnetic signals through the slot, the size of the slot greatly affects the signal power loss. In order to have low loss, the slot line is mainly used at a high frequency of above 3GHz on a substrate having a high dielectric constant(er). This paper proposes the 4:1 impedance transformer using a slot line on TLC-30 laminate (h=20mil, er=3.0; Taconic) being a relatively low dielectric constant at a frequency of 1.85GHz. In the proposed impedance transformer, the dielectric resonator is arranged on the slot line to reduce signal loss occurring at the slot line. The proposed 4:1 microstrip-slot line impedance transformer fabricated using a (Zr,Sn)TiO4 dielectric resonator(er=38) has the transmission loss(S21) of -0.375dB and the reflection value(S11) of -27.6dB at 1.855GHz. This confirms that the slot line can be stably used even in a low dielectric constant substrate and a low frequency region by using a dielectric resonator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.301-313
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• 2021

Theoretical background for the meaning of various piezoelectric properties can be easily found in a number of textbooks and academic papers. In contrast, how they are actually measured and characterized are rarely described, though this information would be the most important especially to the researchers who just started working on the field. It follows that this report was intended to provide a practical guidance for measuring basic but essential properties of ferroelectric-based piezoelectric materials. The discussion begins with how to measurement dielectric properties such as dielectric permittivity and loss (dissipation factor), followed by piezoelectric properties such as piezoelectric constants, electromechanical coupling factor, and quality factor as well as ferroelectric features, i.e., electric field dependent polarization hysteresis. Though our discussion here is limited to the techniques that are already well-standardized, it is expected to make a seed to be developed into more challenging and creative ones.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.551-554
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• 2011

One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of $0.25cm^2/Vs$, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ${\sim}10^5$. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.

• Korean Journal of Environmental Biology
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• v.38 no.4
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• pp.554-562
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• 2020

Tremex fuscicornis (Siricidae), known as the xylophagous horntail, and Leucospis japonica (Leucospidae), known as the parasitoid wasp, are wood-boring wasps belonging to the order Hymenoptera. These insects are interesting sources of biological inspiration for the development of drilling mechanisms. To study the biomimicry aspects, the morphological characters of the ovipositor of T. fuscicornis and L. japonica were analyzed using a stereoscopic microscope, a field emission scanning electron microscope, and an optical microscope. There were many differences in the ovipositors between the two species, such as shape, length, surface structure, and arrangement of the teeth. Evenly arranged teeth were developed at the tip of both the dorsal valve and the ventral valve of the ovipositor of T. fuscicornis and looked like a rotating drill bit. In contrast, in L. japonica, the teeth, which looked like a saw, were found only on the ventral valve. Moreover, the tip of the ovipositor of T. fuscicornis was symmetrically divided into four parts, while that of L. japonica was divided into three parts having a 2:1:1 ratio. However, in the case of T. fuscicornis, after the 14th tooth, four parts melded into three parts maintaining a 2:1:1 ratio, and a dovetail joint was found on the horizontal cross-section of the ovipositor that allowed vertical movement for making a hole. These morphological differences of the ovipositor may be due to the insects' lifestyles and phylogenetic distance. Finally, zinc was commonly found at the tip of the ovipositors of both species, a probable result of ecological adaptation created by drilling wood.

• Microbiology and Biotechnology Letters
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• v.50 no.2
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• pp.211-217
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• 2022

Sodium hypochlorite (NaClO) is a disinfectant widely used in hospitals and food industries because of its antimicrobial activity against not only bacteria but also fungi and virus. The antibacterial activity of NaClO lies in the maintenance of a stable hypochlorous acid (HClO) concentration, which is regulated by pH of the solution. HClO can easily penetrate bacterial cell membrane due to its chemical neutrality and the antibacterial activity of NaClO is thought to depend on the concentration of HClO in solution rather than hypochlorite ions (ClO^-). In this study, we investigated the antibacterial activity of NaClO according to pH adjustment by means of time kill test and assays of Reactive Oxygen Species (ROS) and adenosine triphosphate (ATP) concentration changes before and after NaClO treatment. We also investigated that the degree of cell wall destruction through field emission scanning electron microscopy (FE-SEM). Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) exposed to 5 ppm NaClO at pH 5 exhibited 99.9% mortality. ROS production at pH 5 was 48% higher than that produced at pH 7. In addition, the ATP concentration in E. coli and S. aureus exposed to pH 5 decreased by 94% and 91%, respectively. As a result of FE-SEM, it was confirmed that the cell wall was destroyed in the bacteria by exposing to pH 5 NaClO. Taken together, our results indicate that the antibacterial activity of 5 ppm NaClO can be improved simply by adjusting the pH.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.53-58
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• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.1
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• pp.8-17
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• 2023

In conventional liquid crystal display(LCD) manufacturing process, Indium Tin Oxide(ITO) as transparent electrode and rubbing process of polyimide as alignment layer are essential process to apply electric field and align liquid crystal molecules. However, there are some limits that deposition of ITO requires high vacuum state, and rubbing process might damage the device with tribolectric discharge. In this paper, we made nanocomposite with PEDOT:PSS and MWNT to replace ITO and constructed alignment layer by nano imprint lithography with nano wrinkle pattern, to replace rubbing process. These replacement made that only one PEDOT:PSS/MWNT film can function as two layers of ITO and polyimide alignment layer, which means simplification of process. Transferred nano wrinkle patterns functioned well as alignment layer, and we found out lowered threshold voltage and shortened response time as MWNT content increase, which is related to increment of electric conductivity of the film. Through this study, it may able to contribute to process simplification, reducing process cost, and suggesting a solution to disadvantage of rubbing process.