• Journal of IKEEE
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• v.5 no.1 s.8
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• pp.91-99
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• 2001

Spectral domain of resonant frequency rectangular microstrip patch antenna on anisotropic substrates and superstrate with airgap are analyzed. First, we derive dyadic Green function for selected anisotropic material by constitutive relation and then formulate integral equations of electric fields using Fourier transform in space region. Using Galerkin's moment method, we discretize the electric field integral equations Into the matrix form and select sinusoidal functions as basis functions. We verify the validity of numerical results and compare the results with existing ones in showing a good agreement between them. The resonant frequencies in the variation of air gap, patch length and permittivity of superstrate anisotrpy ratio of anisotrpic superstrate are presented and analyzed.

• Journal of Korea Society of Industrial Information Systems
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• v.4 no.1
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• pp.102-109
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• 1999

In this paper, Electromagnetic scattering problem by a perfectly conducting strip grating with 2 dielectric layer on a grounded plane by incidence of a electric wave is analyzed by applying the PMM (Point Matching Method) known as a simple procedure. The scattered electromagnetic fields are expanded in a series of Floquet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the conducting boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip When the incident angle is normal incidence the minimum value of the geometrically normalized reflected power according as relative permittivity is increased it should be noted that the value of the strip width gets moved toward high value. Them most energy by a normal incident wave is scattered in direction of the other angles except normal incident angle.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.48-61
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• 1989

In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7${\mu}m$ gate length is perfomed. Drift-diffusion model which consider that mobility is a function of local electric field, is used. As a discretization method, instead of FDM (finite difference method) and FEM (finite element method), the Control-Volume Formulation (CVF) is used and as a numerical scheme current hybrid scheme or upwind scheme is replaced by power-law scheme which is very approximate to exponential scheme. In the process of numerical analysis, Peclet number which represents the velocity ratio of drift and diffusion, is introduced. And using this concept a current equation which consider numerical scheme at the interface of control volume, is proposed. The I-V characteristics using the model and numerical method has a good agreement with that of previous paper by others. Therefore, it is confined that it may be useful as a simulator for GaAs MESFET. Besides I-V characteristics, the mechanism of both velocity saturation in drift-diffusion model is described from the view of velocity and electric field distribution at the bottom of the channel. In addition, the relationship between the mechanism and position of dipole and drain current, are described.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.21-28
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• 2007

In this paper, in order to derive the two-dimensional field effect of n-InAlAs/InGaAs HEMTs, we suggested analytical model by solving the two-dimensional Poisson's equation in both InAlAs and InGaAs regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing within the quantum well shaped channel. Derived expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the threshold voltage decreases as drain voltage increases. Compared with the conventional model, the present model may offer more reasonable explanation for the drain-induced threshold voltage roll-off, the Early effect, and the channel length modulation effect. Furthermore, it is expected that the proposed model would provide more reasonable theoretical basis for analyzing various long and short channel InAlAs/InGaAs HEMT devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.10-18
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• 2002

This paper reports a methodology for calculating distribution of the director in an In-plane switching liquid crystal cell by a numerical technique. To calculate distribution of the director, we developed a three dimensional finite element method (FEM) and calculated the distribution of electric potential and electric field in the liquid crystal cell. We have considered the free-energy density composed of electric potential and strain energy in the bulk of liquid crystal cell and calculated the switching property of liquid crystal cell by the Ericksen-Leslie equation and the Laplace equation We generated 1,859 nodes and 8,640 elements for IPS mode cell with 24${\mu}{\textrm}{m}$$\times$12${\mu}{\textrm}{m}$$\times$4.5${\mu}{\textrm}{m}$ and performed transient analysis until 16ms. As a result, horizontal electric field occurred at cell region except liquid crystal region above electrodes and the disclination occured on electrodes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.790-796
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• 2011

The system which is exposed in the impact range of High-altitude Electromagnetic Pulse(HEMP) may get serious damage because HEMP has a very large electric field value, a very fast rise-time, and so on. Electromagnetic analysis should be performed for signals coupled to the opening or cables of the system prior to derive the system design specifications in order to protect the system against HEMP adequately. In this paper, we analyzed the HEMP coupled signals for the coaxial cable which is generally used to transmit and receive video or RF signals and compared the coupled signal of the one wire with that of the inner conductor of a coaxial cable to confirm the decreased effect of HEMP by the shield. The coaxial cable is analyzed by the external and internal region of the shield separately. For the external region of the coaxial cable, general scattered equation was applied to calculate currents on the surface of the shield and for internal region of the coaxial cable, chain matrix algorithm is used. To verify this paper the analyzed results were compared the results of the existing paper and the two results have good agreements.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.1
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• pp.23-28
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• 1999

Rectangular waveguide slot antenna which has simple structure, high efficiency, high trust and small size, is extending in a field of application such as many Radar and Microwave communication. A slot cut into a wall of waveguide is propagated electromagnetic wave to free space it interrtupts the flow of current inner conductor of waveguide. Therefore incident of slot, cutdepth, width, length, i.e. are important parameter of characteristic change of the slot antenna. Result from difficulty of theoretical analysis about slot frequently experimental measured data useful design and manufacture have been accomplished. In this paper, we find the suitable method of analysis that compare two analysis results with measured result of established literature - admittance of slot be solved by propagated power from electric field distribution of slot and mode current computation and accomplishment of computable chart which hasresonant length and cutdepth, incident of slot, i.e. and use the HFSS which applyed finite-element method obtain equal slot analyed method.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.66-74
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• 1999

InAlGaAs/InGaAs HBTs with the various emitter junction gradings(xf=0.0-1.0) and the modified collector structures (collector- I;n-p-n, collector-II;i-p-n) are simulated and analyzed by HMC (Hybrid Monte Carlo) method in order to find an optimum structure for the shortest transit time. A minimum base transit time($ au$b) of 0.21ps was obtainsed for HBT with the grading layer, which is parabolically graded from $x_f$=1.0 and xf=0.5 at the emitter-base interface. The minimum collector transit time($\tau$c) of 0.31ps was found when the collector was modified by inserting p-p-n layers, because p layer makes it possible to relax the electric field in the i-type collector layer, confining the electrons in the $\Gamma$-valley during transporting across the collector. Thus InAlGaAs/InGaAs HBT in combination with the emitter grading($x_f$=0.5) and the modified collector-III showed the transit times of 0.87 psec and the cut-off frequency (f$\tau$) of 183 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.4
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• pp.18-24
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• 2010

This paper presents the improvement of the field uniformity in a reverberation chamber which can be substitute an anechoic chamber for the electromagnetic interference (EMI) and immunity test. Nowadays, there are many EMI issues due to the increasing use of wireless local area network (LAN), digital multimedia broadcasting (DMB), and mobile internet. With this reason, this paper studied the field characteristics in a reverberation chamber for 2.3 GHz band. In this paper, the finite difference time domain (FDTD) method is used to analyze the field characteristics in a reverberation chamber. To improve the field uniformity in the reverberation chamber, this paper adopted a 2D cubical residue diffuser (CRD) with varying the disposition and number of CRD. For each case, the tolerance and standard deviation of the electric field strength are evaluated. In comparison with the reverberation chamber without any CRD, the reverberation chamber with two CRDs showed improved results; 1.98 dB improvement in standard deviation and 3.6 dB improvement in tolerance.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1195-1196
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• 2015

최근 급격한 산업사회의 발달로 인해 전력기기의 종류와 설치개수가 꾸준히 증가하고 있다. 수많은 고전압 전력기기의 운용으로 인해 발생되는 온실가스는 지구온난화와 같은 환경파괴를 유발시키는 등의 문제를 발생시키고 있다. 고전압 전력기기의 전기적 절연을 위해 주로 사용되는 SF6와 같은 기체 절연체는 온실가스를 유발시키며, 현재 여러 나라에서는 고전압 전력기기로부터 방출되는 CO2의 양을 최소화하기 위한 많은 연구가 진행되고 있다. 특히, 일본 교토에서 180여개의 국가가 온실가스 감축의 의무를 나누고자 교토의정서를 채택하였고, 온실가스를 유발하는 SF6를 대체할 수 있는 친환경 기체 절연체에 대한 연구가 활발히 진행 중이다. 그 중에서도 본 연구에서는 친환경 기체 절연체인 Dry-air의 절연파괴와 부분방전 개시전압 특성을 분석하였다. 다양한 구 전극의 크기와 전극 사이 간격 조건에서 AC 절연파괴 및 부부방전 개시전압에 대한 실험을 수행하였다. 또한, 유한요소해석을 통해 산출한 전계 이용률을 고려하여 절연파괴와 부분방전 개시전압에 대한 특성을 분석하였다. 실험결과, 구 전극의 크기와 전극 사이 간격이 증가할수록 절연파괴와 부분방전 개시전압의 크기가 커지는 것을 알 수 있으며, 부분방전이 먼저 개시되고 절연파괴로 이어는 경향을 확인할 수 있었다. 또한, 전계 이용률이 0.52 이상에서는 부분방전이 개시되지 않고 곧바로 절연파괴로 이어지는 것을 확인할 수 있었다.