• Title/Summary/Keyword: 적층형 마이크로파 소자

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Dielectric properties of $BiNbO_4$ dielectric ceramics for multilayer microwave device (적층형 마이크로파 소자용 $BiNbO_4$ 유전체 세라믹스의 유전특성)

  • 박정흠;장낙원;윤광희;최형욱;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.900-905
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    • 1996
  • We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

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Tecnology Trend of Microwave Thin Film Dielectric Components (마이크로파 박막형 유전체 부품의 기술동향)

  • Lee, Seok-Jin;Kim, Tae-Hong;Park, Jeong-Rae;Lee, Sang-Seok;Choe, Tae-Gu
    • Electronics and Telecommunications Trends
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    • v.10 no.3 s.37
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    • pp.139-150
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    • 1995
  • 이동통신 및 위성방송 등 마이크로파를 이용하는 통신수단의 증가와 더불어 통신용 기지국 및 단말기의 수요가 급증함에 따라 마이크로파 대역에서 동작하는 부품의 중요성이 부각되고 있다. 따라서 이들부품중 무선주파수대역에서 동작되는 박막형 유전체 소자 및 적층 소자들의 종류와 특성 및 기술개발 현황에 대해서 알아보았다.

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Sintering and Dielectric Properties of BaO-Nd2O3-TiO2 Microwave Ceramics with Glass-Ceramics (결정화유리의 첨가에 의한 BNT계 세라믹스의 저온소결 및 마이크로파 유전특성)

  • ;;;;Futoshi Ustuno
    • Journal of the Korean Ceramic Society
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    • v.41 no.6
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    • pp.444-449
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    • 2004
  • The microwave dielectric properties of low temperature sintered BaO-Nd$_2$O$_3$-TiO$_2$ (here after BNT) with a Pb-based glass-ceramics were studied in order to investigate their applicability to Low Temperature Co-fired Ceramics (LTCC) for fabrication of multilayered Radio Frequency (RF) passive components module. The BNT ceramics, with 5∼30 wt% of PbO-TiO$_2$-A1$_2$O$_3$-SiO$_2$ based glass-ceramics, were sintered at 105$0^{\circ}C$, which is lower than 130$0^{\circ}C$, sintering temperature of pure BNT ceramics. With increasing the amount of the glass-ceramics, sintering rate of the ceramics become activated due to the softening of glass, resulting in low-temperature densification. BaO-Nd$_2$O$_3$-TiO$_2$ microwave ceramics with 20 wt% glass-ceramics exhibit sintered relative densities over 95% and dielectric constant of 72, quality factor of 1500, and temperature coefficient of frequency of +22 ppm/$^{\circ}C$. This enhanced dielectric properties are attributed to mainly the presence of crystalline phases PbTiO$_3$ within the Pb-based glass.

Effects of CuO and ${B_2}{O_3}$Additions on Microwave Dielectric Properties of $PbWO_4$-$TiO_2$Ceramic (CuO ${B_2}{O_3}$첨가에 따른 $PbWO_4$-$TiO_2$세라믹스의 마이크로파 유전특성)

  • 최병훈;이경호
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.1046-1054
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    • 2001
  • Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

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