• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.444-450
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• 2010

In the present study, the microscopic degradation of copper and copper alloy subjected to cyclic deformation has been evaluated by the electrical resistivity measurement using the DC four terminal potential method. The copper (Cu) and copper alloy (Cu-35Zn), whose stacking fault energy is much different each other, were cyclically deformed to investigate the response of the electrical resistivity to different dislocation substructures. Dislocation cell substructure was developed in the Cu, while the planar array of dislocation structure was developed in the Cu-35Zn alloy increasing dislocation density with fatigue cycles. The electrical resistivity increased rapidly in the initial stage of fatigue deformation in both materials. Moreover, after the fatigue test it increased by about 7 % for the Cu and 6.5 % for the Cu-35Zn alloy, respectively. From these consistent results, it may be concluded that the dislocation cell structure responds to the electrical resistivity more sensitively than the planar array dislocation structure evolved during cyclic fatigue.

• The Journal of Natural Sciences
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• v.7
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• pp.83-90
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• 1995

The microstructural and textural development during rolling is compared in two Hadifield's steels (high Mn steel), one having low carbon content (0.65 wt.%) and the other high carbon (1.35 wt.%).In low carbon Hadfield's steel (LCHS) mixed microstructures are formed which contain intrinsic stacking faults, deformation twins, and brass type shear bands. The deformation twins are thought to be formed by the stacking of intrinsic stacking faults. The similar development to 70-30 brass texture is observed in early deformation. However the abnormal texture is developed after 40 % deformation, which is thought to be due to the martensite phase transformation. In high carbon Hadfield's steel (HCHS) mixed substructures of dislocation tangles, deformation twins, and shear bands (both copper and brass type) are found to develop. The texture development is similar to that of 70-30 brass. This is consistant with no carbon segregation and no martensitic phase transformation in HCHS. In spite of the difference of substructure and texture development during rolling in two steels, the difference in stacking fault energy is measured to be small ($2 mJm^-2$). The carbon segregation is only occurred in LCHS. Thus it is thought that the carbon segregation influence the microstructure and texture development during rolling. This is related with martensite phase transformation in LCHS.

• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.6
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• pp.650-657
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• 2001

This paper explains the process of designing a shielded encircling remote field eddy current (RFEC) probe to inspect nuclear fuel cladding tubes and investigates resulting signal characteristics. To force electromagnetic energy from exciter coil to penetrate into the tube, exciter coil is shielded outside by laminations of iron insulated electrically from each other. Effects of shielding and the proper operating frequency are studied by the finite element analysis and the location for sensor coil is decided. However, numerically simulated signals using the designed probe do not clearly show the defect indication when the sensor passes a defect and the other indication appeared as the exciter passes the defect is affected by the shape of shielding structure, which demonstrates that the sensor is directly affected by exciter fields. For this reason, the sensor is also shielded outside and this shielding dramatically improves signal characteristics. Numerical modeling with the finally designed probe shows very similar signal characteristics to those of inner diameter RFEC probe. That is, phase signals show almost equal sensitivity to inner diameter and outer diameter defects and the linear relationship between phase signal strength and defect depth is observed.

• Journal of the Korean Society for Nondestructive Testing
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• v.35 no.5
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• pp.332-340
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• 2015

Acoustic emission (AE) is an effective nondestructive test that uses transient elastic wave generated by the rapid release of energy within a material to detect any further growth or expansion of existing defects. Over the past decades, because of environmental issues, the use of compressed natural gas (CNG) as an alternative fuel for vehicles is increasing because of environmental issues. For this reason, the importance and necessity of detecting defects on a CNG fuel tank has also come to the fore. The conventional AE method used for source location is highly affected by the wave speed on the structure, and this creates problems in inspecting a composite CNG fuel tank. Because the speed and dispersion characteristics of the wave are different according to direction of structure and laminated layers. In this study, both the conventional AE method and the energy based contour map method were used for source location. This new method based on pre-acquired D/B was used for overcoming the limitation of damage localization in a composite CNG fuel tank specimen which consists of a steel liner cylinder overwrapped by GFRP. From the experimental results, it is observed that the damage localization is determined with a small error at all tested points by using the energy based contour map method, while there were a number of mis-locations or large errors at many tested points by using the conventional AE method. Therefore, the energy based contour map method used in this work is more suitable technology for inspecting composite structures.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.937-942
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• 1999

Fe계 합금의 적층결함에너지를 감소시키는 것으로 알려진 Mn이 Fe-20Cr-1C-Si 경면처리 합금의 변형유기 상변태거동과 상온 및 고온 마모저항성에 미치는 영향에 대하여 조사하였다. 15ksi의 접촉응력에 대하여 0~25wt.% Mn을 첨가한 시편은 모두 상온에서 마모손실량이 적은 우수한 마모저항성을 보였는데 Mn 첨가량이 5wt.% 이하인 시편의 경우 마모표면에서 ${\gamma}$$\longrightarrow$$\alpha$\`변형유기 상변태가 발생한 반면 15wt.% 이상 Mn을 첨가한 시편에서는 ${\gamma}$$\longrightarrow$$\varepsilon$변형유기 상변태가 발생하는 것으로 나타났다. 25$0^{\circ}C$까지 고온 마모시험결과 ${\gamma}$$\longrightarrow$$\alpha$\`변형유기 상변태가 발생한 5wt.% 이하 Mn 첨가시편은 Mn 첨가량이 증가할수록 마모손실량이 증가하는 것으로 보아 Mn 첨가는 ${\gamma}$$\longrightarrow$$\alpha$\`변형유기 상변태에 있어서 고온 마모저항성을 저하시키는 것으로 생각되며 이는 Mn이 ${\gamma}$$\longrightarrow$$\alpha$\`변형유기 상변태의 M(sub)d 온도를 감소시키기 때문으로 생각된다. 반면에 ${\gamma}$$\longrightarrow$$\varepsilon$변형유기 상변태가 일어난 15wt.% 이상 Mn 첨가 시편의 경우 Mn 첨가량 증가에 따른 고온 마모손실량의 차이가 없는 것으로 보아 ${\gamma}$$\longrightarrow$$\varepsilon$변형유기 상변태는 ${\gamma}$$\longrightarrow$$\alpha$\`변형유기 상변태에 비해 온도의 존성이 적은 것으로 생각된다.

• Journal of the Korean Society for Nondestructive Testing
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• v.31 no.1
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• pp.32-39
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• 2011

The object of this study is to evaluate and discriminate nondestructively the dislocation substructures of Cu and Cu-Zn alloy subjected to the low-cycle-fatigue. The ultrasonic wave velocity, electrical resistivity and positron annhilation lifetime(PAL) were measured to the nondestructive testing. Cyclic fatigue test of Cu and Cu-Zn alloy with much different stacking fault energies was conducted and the correlations between dislocation behavior and nondestructive parameters were studied. Dislocation cell substructure was developed in Cu, while planar array of dislocation structure was developed in Cu-35Zn alloy only increasing dislocation density with fatigue cycles. Decrease in ultrasonic wave velocity, increase in electrical resistivity and PAL were shown because of the development of lattice defects, dislocations and vacancies, by cyclic fatigue at room temperature. In contrast to Cu-Zn alloy of the planar-array dislocation substructure showing continuous changes in the nondestructive parameters, it does not make any noticeable changes in the nondestructive parameters after the evolution of dislocation cell substructure in Cu.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.278-282
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• 2001

The recombination motion of Partial dislocations on basal slip (0001) 1/3<1120> in sapphire ($\alpha$-Al$_2$$O_3$) single crystals was investigated using the four-point bending test with the prism plane (1120) samples. These bending experiments were carried but in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. During these tests it was shown that an incubation time was needed for basal slip to be activated. The activation energy for the incubation time was 5.6-6.0eV in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$. The incubation time is believed to be related to recombination of climb dissociated partial dislocations via self-climb. In addition, these activation energies are nearly same as those for oxygen self-diffusion in $Al_2$$O_3$ (approximately 6.3 eV). Thus, the recombination of the two partial dislocations would be possibly controlled by oxygen diffusion on the stacking fault between the partials.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.2-194.2
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• 2015

본 논문에서는 InP 기판에 자발형성법 (Self-assembled Mode)으로 성장한 InAs/InAlGaAs 양자점(Quantum Dots)의 외부 열처리 온도에 따른 광학적 특성을 논의한다. 분자선증착기 (Molecular Beam Epitaxy, VH80MBE)로 5주기 적층구조를 갖는 InAs/InAlGaAs 양자점 시료 (기준시료)를 성장 후 온도 의존성 및 여기광세기 의존성 포토루미네슨스 (photoluminescence, PL) 분광법으로 기본특성을 평가하였다. 양자점 시료를 $500{\sim}800^{\circ}C$에서 열처리를 수행하고 광학적 특성을 열처리 전과 비교하여 분석하였다. $550^{\circ}C$에서 열처리한 InAs/InAlGaAs 양자점 시료의 저온 (11K) PL 파장은 1465 nm를 보였으며, 이는 열처리를 하지 않은 기준시료의 1452 nm 보다 13 nm 장파장으로 이동하였다. 열처리 온도가 $700^{\circ}C$ 이상인 경우, 양자점 PL 파장이 다시 단파장으로 이동하는 현상을 보였지만 여전히 열처리하지 않은 기준시료보다 장파장을 나타내었다. $700^{\circ}C$에서 열처리한 양자점 시료의 저온 PL 광세기는 기준시료보다 15.5배 더 크게 나타났으며, 주변 온도가 증가할수록 더디게 감소하는 것을 확인할 수 있었다. 온도의존성 PL로부터 구한 활성화에너지 (Activation Energy)는 $700^{\circ}C$ 열처리 온도의 경우 175.9 meV를 나타내었다. InAs/InAlGaAs 양자점 시료의 열처리 온도에 따른 광특성 변화를 InAs 양자점과 InAlGaAs 장벽층 계면에서 III족 원소인 In, Al 및 Ga의 상호확산과 결함이 완화되는 현상으로 해석할 수 있다.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.75-80
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• 2019

Silicon solar cells have been widely used as a most promising renewable energy source due to eco-friendliness and high efficiency. As modules of silicon solar cells are connected in series for a practical electricity generation, a large voltage of 500-1,500 V is applied to the modules inevitably. Potential-induced degradation (PID), a deterioration of the efficiency and maximum power output by the continuously applied high voltage between the module frames and solar cells, has been regarded as the major cause that reduces the lifetime of silicon solar cells. In particular, the migration of the $Na^+$ ions from the front glass into Si through the anti-reflection coating and the accumulation of $Na^+$ ions at stacking faults inside Si have been reported as the reason of PID. In this research, the thickness effect of $SiO_x$ layer that can block the migration of $Na^+$ ions on the reduction of PID is investigated as it is incorporated between anti-reflection coating and p-n junction in p-type PERC solar cells. From the measurement of shunt resistance, efficiency, and maximum power output after the continuous application of 1,000 V for 96 hours, it is revealed that the thickness of $SiO_x$ layer should be larger than 7-8 nm to reduce PID effectively.