• The Korean Journal of Rheology
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• v.11 no.1
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• pp.57-65
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• 1999

In order to measure yield stress of PIM feedstocks simply and effectively, a yield stress measuring technique was developed by a vane method. The vane method had an advantage that there was no wall-slip, while it had a drawback that it could not measure viscosity change at various shear rates. A Newtonian fluid was tested for the appropriateness of the measuring technique. The end effect of a vane was checked to produce an acceptable error. The torque peak has been considered to be developed at yielding of non-Newtonian fluids with yield stress. However, it was influenced very much by control system of the instrument so that the torque value at the stable region was taken to calculate yield stress. Torque at zero rotational speed was obtained by extrapolating the torque values at various speeds to remove the effect of the rotational drag. As general verification, yield stress of feedstocks made of Tungsten carbide powder with wax-based binder was measured at different temperatures and various powder concentrations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.37-42
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• 2004

Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.6
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• pp.572-581
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• 2001

A heat pipe heat sink device which is to evacuate maximum heat of about 1800W from a powersemiconductor was designed and manufactured One set of cooling device os composed of an Aluminum block (130${\times}$160${\times}$35mm) 4 PFC heat pipes $(d_0 22.23mm)$ and 126 Aluminium fins (250${\times}$58${\times}$0.8mm) Experimental data obtained at a power of 1~2kW revealed that the total thermal resistance of the device varied 0.02~0.018$^{\circ}C$/W along with increasing air velocity from 2m/s to 3 m/s. The result represented a good satisfaction of requirement condition to maintain temperature rise of semiconductor lowe that $40^{\circ}C$ at 1800W and air velocity of 3 m/s Some important resistance such as convective resistances at both fins and heat pipes showed good agreement between mathematical predictions and measurement data.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.22-29
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• 2006

According to the recent revision of KS on the basis of the IEC, equipotential grounding systems has been come into focus and the use of surge protective devices(SPD) has been increased radically in order to operate the power system stably. $Z_nO$ varistor with non-linear resistance, which has an outstanding voltage-current(V-I) characteristic, is mainly used in power system to limit surge voltage and divert surge current. $Z_nO$ varistors are packaged several types based on the circuit assembly to be connected to a.c. power line. When the user assemble the $Z_nO$ varistors into parallel or series circuit package, there are my things to be taken into consideration including functions and thermal stability because they are directly related to the safety. We compare stabilities of each assembly type by measuring residual voltage, discharge current, leakage current and surface temperature concerned to the protection performances between a single device with a 40[kA] of current capacity and parallel or series circuits type of varistor package.

• Korean Journal of Food Science and Technology
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• v.14 no.2
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• pp.125-129
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• 1982

Four peroxidase isozymes from horseradish roots (isozymes A, B, C and D) were isolated by chromatography and were thermally inactivated at $70{\sim}97^{\circ}C$ and pH 7.0. The four isozymes had different inactivation rates and the inactivation of each isozymes did not follow first order kinetics. D values of isozymes A, B, C, D and crude enzyme were 594s, 1850s, 2050s, 78s, 130s and z values were $24.0^{\circ}C$, $12.5^{\circ}C$, $18.0^{\circ}C$, $23.7^{\circ}C$ and $24.0^{\circ}C$, respectively. Sephadex gel chromatogram of the thermally treated isozyme C indicated that the shape and molecular weight of the native isozyme changed during inactivation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.48.2-48.2
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• 2011

열전재료는 열과 전기에너지의 상호 변환이 가능한 재료로 이를 이용한 응용제품의 개발이 크게 주목을 받고 있으며, 특히 $Bi_2Te_3$계 합금의 경우 상온에서 가장 우수한 성능지수를 가지는 재료로 많은 연구가 진행되고 있다. 그러나 기존의 $Bi_2Te_3$계 합금은 일방향응고법으로 제조되어 많은 시간과 비용을 필요로 하고, 특히 C축의 Van der Waals 결합으로 인해 기계적 강도가 약하다는 단점이 있었다. 최근 분말야금법을 이용하여 기계적강도를 높이고, 격자산란에 의한 열전도도의 감소로 성능지수를 높일수 있는 방법들이 제시되고 있다. 본 연구에서는 급속응고공정인 가스분무법을 이용하여 n-type의 $95%Bi_2Te_3-5%Bi_2Se_3$분말을 제조하였고, 이 재료의 경우 성형조건에 따라 조직이 쉽게 변하기 때문에 이를 제어하기 위해 단시간동안 고압으로 성형가능한 자기펄스압축성형법(Magnetic Pulsed Compaction)을 이용하여 성형체를 제조하였다. 제조된 성형체는 밀도를 증가시키고 결정립성장을 억제시킬수 있는 방전플라즈마소결법(Spark Plasma Sintering)을 이용하여 소결체로 제조되었으며, 각각의 공정이 열전성능에 미치는 영향을 고찰하였다. OM (Optical Microscope) 및 SEM (Scaning Electric Microscope)을 이용하여 미세구조를 관찰하였고 XRD (X-Ray Diffraction)를 이용하여 상의 변화를 분석하였으며, 상온에서 경도를 측정함으로서 공정조건에 따른 기계적강도를 비교하였다. Seebeck계수는 시편의 양단에 온도차를 주어 발생하는 기전압을 측정하여 계산하였고, 전기비저항은 4point probe방법으로 측정하였다. 전하이동도 및 전하농도는 Hall측정으로부터 구하였고 열전도도를 측정하여 종합적인 열전성능을 평가하였다.

• Journal of the Korean Recycled Construction Resources Institute
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• v.5 no.4
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• pp.474-480
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• 2017

In this study, the evolution of electrical impedance of electric nodes was investigated to determine the setting time of cement paste using the electrical impedance spectroscopy method. The electric nodes were embedded in fresh cement paste and the electrical impedance signatures were continuously monitored. Vicat needle test and semi-adiabatic calorimetry test were also conducted to validate the electrical impedance spectroscopy method. During hydration period of cement paste, the magnitude of conductance gradually increased, and then started to decrease rapidly at a first certain time. After that, the magnitude of conductance gradually decreased at a second certain time. The times of turning point in the curves of magnitude of conductance seem to be related with the setting time by Vicat needle test. Also, the setting times by the electrical impedance spectroscopy method are well posed within the setting period estimated by the semi-adiabatic calorimetry test. Based on the results, it can be concluded that the setting time of cement paste can be effectively monitored through the electrical impedance spectroscopy method.

• Journal of the Korea Concrete Institute
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• v.15 no.2
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• pp.246-253
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• 2003

Although concrete members are not normally designed to resist direct tension, the knowledge of tensile strength is of value in estimating the cracking load. In general, there are three types of test method for tensile strength ; direct tension test, flexural tension test, and splitting tension test. Though direct tensile strength represents the real tensile strength of concrete, direct tension tests are seldom carried out, mainly because it is very difficult to applicate a pure tension force. The purpose of this paper is to investigate the test methods, effect of aspect ratio, and the size effect on the direct tensile strength. Direct tension test, using bonded end plates, follows RILEM and U.S.Bureau of Reclamation. And other test methods follow ASTM provisions. Four kinds of aspect ratio and two kinds of size effect are tested. Same variables are tested by direct tension test and splitting tension test for comparison between the two test methods. Test results show that direct tensile strength of concrete is more affected by aspect ratio and size than other kinds of strength.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.112-117
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• 2008

Vertical interconnection scheme using novel silicon-through-via for 3D MEMS devices or stacked package is proposed and fabricated to demonstrate its feasibility. The suggested silicon-through-via replaces electroplated copper, which is used as an interconnecting material in conventional through-via, with doped silicon. Adoption of doped silicon instead of metal eliminates thermal-mismatch-induced stress, which can make troubles in high temperature MEMS processes, such as wafer bonding and LP-CVD(low pressure chemical vapor deposition). Two silicon layers of $30{\mu}m$ thickness are stacked on the substrate. The through-via arrays with spacing $40{\mu}m$ and $50{\mu}m$ are fabricated successfully. Electrical characteristics of the through-via are measured and analyzed. The measured resistance of the silicon-through-via is $169.9\Omega$.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.929-935
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• 1995

In order to develop COG (Chip On Glass) technology for LCD module interconnecting the driver IC to Al pad electrode on the glass substrate, Anisotropic Conductive Adhesive(ACA) process, the most promising one among COG technologies, was investigated. ACA process was carried out by two steps, dispensing of ACA resin in the bonding area and curing by W radiation. Load on the chip was ranged from 2.0 to 15kg and the chip was heated at about 12$0^{\circ}C$. In resin, the density of conductive particles coated with Au or Ni at the surface were 500, 1000, 2000 and 4000 particles/$\textrm{mm}^2$, and the diameter of particles were 5, 7 and 12${\mu}{\textrm}{m}$. As a result of the experiments, ACA process using ACA particle of diameter and density of 5${\mu}{\textrm}{m}$ and 4000 particles/$\textrm{mm}^2$ respectively shows optimum characteristic with the stabilzed bonding properties and contact resistance.