• Korean Journal of Materials Research
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• v.10 no.1
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• pp.34-40
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• 2000

The $Pb_{0.94}Y_{0.04}[(Zr_{0.6}Sn_{0.4})_{0.915}Ti_{0.085}]O_3$ ceramics which corresponded to the antiferroelectric-ferroelectric phase boundary composition were prepared for digital-type-piezoelectric/electrostrictive device application. Their dielectric, field-induced polarization (P) and strain (X) behaviors were studied with variations in sintering condition and excess PbO content. The orthorhombic structure of specimens was hardly affected either by excess PbO addition or sintering temperature. With increasing excess PbO content, grains tended to be smaller and rounded ones, and the optimum sintering temperature was lowered. Excess PbO addition stabilized the antiferroelectric phase of the specimen effectively, which was confirmed by P-E and X-E analyses. Also the digital-type-strain character was found to be enhanced despite of slight increase in phase transition (AFE-FE) field and electrical resistivity, and decrease in maximum strain. These results were explained in terms of possible lattice defects and domain wall motion.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.109-114
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• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.7-13
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• 2007

We synthesized and investigated $La_{0.75}Sr_{0.25}FeO_3$ by Glycine Nitrate Process(GNP) method used as cathode materials for SOFC(solid oxide fuel cell). Optimized amount of glycine is 3.17 mol. ICP elemental composition analysis indicated that the stoichiometry of the synthesized powders have nearly nominal values. SEM images and XRD patterns reveal that the synthesized powder has uniform size distribution and high degree of crystallinity. The sample powders were isostatically pressed to form a pellet. The green body was sintered at $1200^{\circ}C$ and the relative density of the sintered specimens were measured by Archimedes mettled. We measured electrochemical performance of LSF by AC impedance spectroscopy. Resistance of LSF shows lower value than that of LSM throughout all temperature region. The anode-supported solid oxide fuel cell showed a performance of $342mW/cm^2(0.7V,\;488mA/cm^2)$ at $750^{\circ}C$. The electrochemical characteristics of the single cell were examined by at impedance method.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.846-850
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• 2002

A PMN-PT-BT/Ag composite was prepared by surface modification with MgO sol with hoping to suppress silver's migration during sintering. The mixture of PbO, $N_2O_5,\;TiO_2\;with\;Mg(NO_3)_2$ instead of MgO was ball milled, the solvent was removed and then the dried powders were calcined at 950$^{\circ}C$/1h. The calcined powder were treated with 3.0 mol% $Ag_2O$ and 1.0 wt% MgO sol and calcined at 550$^{\circ}C$/1h. The dielectrics sintered at 1000$^{\circ}C$/4h under a flowing oxygen showed the density of 7.84g/$cm^3$, the room temperature dielectric constant of 18400, the dielectric loss of 2.4%, the specific resistivity of $0.24{\times}10^{12}{\Omega}{\cdot}cm$. It also showed the bending strength of $120.7{\pm}11.26$ MPa and the fracture toughness of $0.87{\pm}0.002\;MPam^{1/2}$ which were comparable to commercial PZT. The microstructure sonsisted of grains of ∼4${\mu}m$. SEM and SIMS analysis showed that Ag grew as ∼1${\mu}m$ and excess MgO as ∼0.5${\mu}m$.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.413-419
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• 2002

Particulate composites of $Al_2O_3$/TiC/SiC, $Al_2O_3$/TiC and $Al_2O_3$/SiC have been fabricated by hot pressing and their R-curve behaviors and mechanical properties were investigated. $Al_2O_3$ containing 30 vol% TiC particles showed higher toughness by 8% than that for monolithic alumina and its fracture strength was increased significantly by approximately 30%. On the other hand, the addition of 30 vol% SiC of $3{\mu}m$ in $Al_2O_3$ decreased the fracture strength slightly but induced a rising R-curve behavior owing to the strong crack bridging of SiC particles. In case of $Al_2O_3$/TiC/SiC, arising R-curve behavior was also observed and the fracture toughness reached 6.6 MPa${\cdot}\sqrt{m}$ at the crack length of $1000{\mu}m$, which was lower than that of $Al_2O_3$/SiC, however, while the fracture strength was higher by about 20%. The fracture toughness seemed to be decreased as smaller TiC particles roughened the SiC interface and pullout of the SiC particles for crack bridging became less active.

• Journal of the Korean Society for Railway
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• v.15 no.6
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• pp.597-603
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• 2012

The cases for selecting contact materials of Ag and AgC for Bias Track Relay are the studies and their safety evaluations are proposed in this paper. The welding at the relative low current has occurred in Ag contacts, but the one has not occurred in AgC contacts although the high currents flow since it has an excellent temperature characteristic. In the repetitive switching experiment, more unstable resistance and transfer phenomena has occurred in contacts as the switching numbers of AgC contacts increase, which results in more consumption of contacts. In the experiments, there exists a trade off relationship between welding and resistance variation. AgC contacts have excellent characteristics in welding, but the caution is required in using them since a lot of repetition switching produces much resistance variation. However, Ag contacts have excellent characteristics in repetitive switching, but weak ones in welding.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.111-116
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• 1998

Silicon nitride is hard and tough ceramic material. Hereby, mechanical machinability is very poor. It has also high electrical resistance. Silicon nitride of extremely high electrical resistivity becomes conductive ceramic composite by adding 30 wt% TiN. Ceramics with high electrical conductivity can be electrical discharge machined. Using by the Electrical Discharge Machining (EDM) technique. $Si_3N_4-TiN$ ceramic composite with high electrical conductivity is utilized to make metal working tool. These tool materials have severe wear problem as well as oxidation. Post HIP processing after sintering $Si_3N_4-TiN$ ceramic composites was performed. The tribological property of $Si_3N_4-TiN$ composite as a function of content of TiN was investigated in air, at room temperature. The hardness, fracture toughness, and flexural strength were compared with the wear volume. SEM observation of wear tracks can make an explanation of wear mode of $Si_3N_4-TiN$ composite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.112-112
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• 2008

박막형 태양전지에 관한 연구는 1954년 D.C. Reynolds 가 단결정 CdS 에서 광기전력을 발견하면서부터 시작되었다. 고효율 단결정 규소 태양전지가 간편하게 제작되고 박막형 태양전지의 수명문제가 대두되어 한때는 연구가 중단되어지기도 하였으나, 에너지 문제가 심각해지면서 값이 저렴하고 넓은 면적에 쉽게 실용화 할 수 있는 박막형 태양전지에 많은 관심을 가지게 되었다. 박막형 태양전지에 사용되는 CdS는 II-VI 족 화합물 반도체로서 에너지금지대폭이 2.42eV인 직접천이형 n-type 반도체로서 대부분의 태양광을 통과시킬 수 있으며 가시광선을 잘 투과시키고 낮은 비저항으로서 광흡수층인 CdTe/$CuInSe_2$ 등과 같이 태양전지의 광투과층(윈도레이어)으로 널리 사용되고 있다. 이러한 이종접합 박막형 태양전지의 효율을 높이기 위해선 윈도레이어 재료인 CdS 박막의 낮은 전기 비저항치와 높은 광 투과도 값이 요구되어지고 있다. CdS 박막의 제작방법으로는 spray pyrolysis법, 스크린프린팅, 소결법, puttering법, 전착법, CBD(chemical bath deposition)법 및 진공증착법 등의 여러 가지 방법들이 보고되었다. 이 중 sputtering의 경우, 다른 방법들에서는 얻기 어려운 매우 얇은 두께의 박막 증착이 가능하며, 균일성 또한 우수하다. 또한 대면적화가 용이하여 양산화 기술로는 다른 제조 방법들에 비해 많은 장점을 가지고 있다. 따라서 본 연구에서는 sputtering에 의해 증착한 CdS의 박막에 광투과도 등의 향상을 위하여 CMP( chemical mechanical polishing) 공정을 적용하여 표면 특성을 개선하고자 하였다. 그 기초적인 자료로서 CdS 박막의 CMP 공정 조건에 따른 연마율과 비균일도, 표면 특성 등을 ellipsometer, AFM(atomic force microscopy) 및 SEM(scanning electron microscope) 등을 활용 하여 분석하였다.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.206-212
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• 1994

Aluminium titanate-mullite composites with varying chemical compositions were prepared by the stepwise hydrolysis of $Si(OC_2H_5)_4$, and $Ti(OC_2H_5)_4$in $AI_2O_3$ ethanolic colloidal dispersion. Sintered bodies having 20-50~01% mullite at $1600^{\circ}C$ for 2h have shown, that it is possible to develop an aluminium titanate with moderately high strength and low thermal expansion coefficient. This was obtained by inhibiting grain site of aluminium titanate with mullite and microcracks. Those with 80-70vol % aluminium titanate have excellent thermal shock resistance and has room-temperature strengths of 31-45MPa. The relation between thermal shock resistance and strength, Young's modulus, sound velocity and thermal expansion coefficient was discussed.