• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.2A
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• pp.214-217
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• 2004

In this paper, a Ka-band LTCC (low temperature co-fired ceramic) narrow bandpass filter (BPF) is firstly presented. This BPF shows very narrow 3dB fractional bandwidth of 4.5 ％ centered at 28.7㎓. The advantages of multi-layered LTCC technology such as high integration and vertical stacking capabilities were employed to design three-dimensional interdigital end-coupled embedded microstrip narrow BPF. The difficulties in controlling the precise distance between two adjacent resonators in LTCC end-coupled BPF were overcome by locating the resonators on different layers. The measured insertion loss is 3dB at 28.7㎓, pass band is from 27.9 ㎓ to 29.2 ㎓, and the return loss in the pass band is less than 10 dB.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.213-216
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• 2009

WGS(Water Gas Shift)반응은 일산화탄소(CO)를 이산화탄소($CO_2$)로 전환하는 반응으로 일체형 수소생산시스템의 실현을 위한 고순도 수소생산에 있어서 중요한 단계이다. WGS 반응은 열역학적 평형을 고려하여 고온전이반응(HTS: High Temperature Shift)과 저온전이반응(LTS: Low Temperature Shift) 두 단계 반응으로 진행된다. 두 단계 공정의 통합을 위해 낮은 온도에서 높은 활성을 갖는 WGS 반응용 촉매 개발이 필요하다. 최근 낮은 온도에서 높은 활성을 갖는 귀금속 촉매에 다양한 담체를 적용시킨 연구가 활발히 진행되고 있다. 선행 연구 결과, Ce-$ZrO_2$ 구조는 Ce/Zr 비에 따라 다양한 특성 변화를 관찰하였다. 따라서 낮은 온도에서 높은 활성을 갖는 WGS 반응용 촉매 제조를 위해 환원성 담체인 $CeZrO_2$에 Pt 을 담지시켜 성능을 평가하였다. 제조된 모든 담체는 공침법(Co-precipitation)으로 제조 하였으며 $500^{\circ}C$에서 6시간 소성하였다. 제조된 담체에 백금(Pt)을 함침법(Incipient Wetness Impregnate)으로 담지시켰다. 특성분석은 BET를 이용하여 표면적을 측정하였다. 촉매 반응 실험조건은 $200^{\circ}C{\sim}400^{\circ}C$ 온도범위에서 기체공간속도(GHSV: Gas Hourly Space Velocity) 45,000 ml/$h{\cdot}g-cat$ 으로 혼합가스($H_2$:60%, $N_2$:20%,$CH_4$:1%,CO:9%,$CO_2$:10%)를 흘려 반응 후 배출되는 가스를 Micro-Gas Chromatography 를 이용하여 측정하였다.

• International Journal of Highway Engineering
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• v.14 no.1
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• pp.17-24
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• 2012

This study evaluated the performance of Korean epoxy asphalt mixtures using several laboratory tests. Four types of epoxy asphalt mixtures were manufactured based on 13mm dense graded asphalt mixtures: three Korean and one Japanese epoxy asphalt mixtures where 20% or 40% of asphalt binder was replaced by epoxy resins. Curing time was determined as 3 and 6 hours for the mixtures containing 40% and 20% of epoxy resins, respectively. From the laboratory tests including wheel tracking, indirect tension fatigue, bending beam, and moisture susceptibility tests, it was concluded that the epoxy asphalt mixtures had superior performance than conventional asphalt mixtures except moisture susceptibility. Also, the performance of the Korean epoxy asphalt mixtures was comparable to the Japanese mixtures. Thermal coefficient, bond strength, and indirect tension tests were conducted to examine the applicability of the Korean epoxy asphalt mixtures to concrete repair. Its adhesion was strong enough to be bonded to surrounding concrete materials and its tensile strength was comparable to the concrete, but thermal expansion coefficient was 5 times greater than the surrounding concrete.

• Applied Chemistry for Engineering
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• v.19 no.5
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• pp.512-518
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• 2008

The present work studied the selective catalytic reduction (SCR) of NO to $N_2$ by $NH_3$ over $V/TiO_2$ focusing on NOx control for the stationary sources. The SCR process depends mainly on the catalyst performance. The reaction characteristics of SCR with $V/TiO_2$ catalysts were closely examined at low and high temperature. In addition, adsorption and desorption characteristics of the reactants on the catalyst surface were investigated with ammonia. Seven different $TiO_2$ supports containing the same loading of vanadia were packed in a fixed bed reactor respectively. The interaction between $TiO_2$ and vanadia would form various non-stoichiometric vanadium oxides, and showed different reaction activities. There were optimum calcination temperatures for each samples, indicating different reactivity. It was finally found from the $NH_3-TPD$ test that the SCR activity was nothing to do with $NH_3$ adsorption amount.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1350-1355
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• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.327-327
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• 2008

Lead-free $(K_{0.5}Na_{0.5})NbO_3$ 압전 세라믹스는 다양한 광소자로의 응용과 압전 특성, 초전 특성을 이용한 압전 소자로의 응용이 가능한 재료로 보고되고 있다. 그러나 KNN계 압전소재 특성상 판상 형태의 결정립으로 인해 낮은 소결 밀도를 갖게 되고, 그로인해 압전물성의 저하를 초래하는 문제점을 가지고 있다. 따라서, 본연구에서는 다양한 밀링 방법을 적용하여 입자 사이즈를 작게 하고 소성체의 결정립을 구형화 함으로써 저온소결에서의 압전물성을 개선시키고자 한다. $(K_{0.5}Na_{0.5})NbO_3$를 기계적 분쇄법에 의해 입자사이즈에 따라 변화되는 상의 분석과 압전체로서의 특성을 관찰하였다. 결정학적 상분석 및 미세 조직은 XRD, SEM을 이용하여 관찰하였고, Capacitance는 Impedance analyzer(HP4192A)로 측정하였으며, Impedance 주파수 특성은 Network Analyzer로 측정하여 Kp, Kt와 Qm을 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.232-236
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• 2010

Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1105-1111
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• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.