• 한국정밀공학회지
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• 제34권2호
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• pp.107-114
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• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.