• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.211-217
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• 2005

[ $Zn_{1-x}Co_{x}O$ (x=0-0.3) films were grown on Corning 7059 glasses by asymmetrical bipolar pulsed dc magnetron sputtering. The c-axis orientation along (002) plane was enhanced with increasing Co concentration. The $Zn_{1-x}Co_{x}O$ films are grown with fibrous grains of tight dome shape. The transmittance spectra measured from UV-visible showed that sp-d exchange interactions and typical d-d transitions become activated with increasing Co concentration. The electrical resistivity of $Zn_{1-x}Co_{x}O$ films increased with increasing Co concentration, especially it increased greatly at $30at\% Co. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster is formed and the ferromagnetic properties are exhibited. The low electrical resistivity and room temperature ferromagnetism of $Zn_{1-x}Co_{x}O$ thin films suggested the possibility of the application to Diluted Magnetic Semiconductors (DMSs).

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.27-32
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• 1986

Electrical conductivities of NiO-$Y_2O_3$ systems containing 0.8, 1.6, and 3.2 mol% NiO have been measured in the temperature range of 400 to 1100$^{\circ}$C at $PO_2$'s of 1 ${\times}10^{-5}$ to 2 ${\times}10^{-1}$ atm. Plots of $log\sigma$ vs 1/T at constant $PO_2$'s are found to be linear with an inflection at temperature around 650$^{\circ}$C. The slopes are steeper in the high temperature region above 650$^{\circ}$C than in the low temperature region below 650$^{\circ}$C. The average activation energies are 41.8kcal/mol in the high temperature region and 12.5kcal/mol in the low temperature region. $PO_2$'s dependence value, 1/n, is 1/5.1~1/5.4 in the high temperature region and 1/5.9~1/6.2 in the low temperature region. The NiO-$Y_2O_3$ systems are found to be an electronic p-type semiconductor. The predominant defects in the systems are believed to be triply ionized yttrium vacancy in the high temperature region and doubly ionized oxygen interstitial in the low temperature region. Ionic contribution to the total conductivity is found from ${\sigma}^{\propto}PO_2$ in the temperatures below 650$^{\circ}$C.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.85-88
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• 2009

Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.237-242
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• 2003

$Ti_{1-x}$$^{57}$ F $e_{x}$ $O_2$(0.0$\leq$x$\leq$0.07) compounds were fabricated using the sol-gel method, and the crystal structure and magnetic properties were investigated as a function of doped $^{57}$ Fe concentration. X-ray diffraction patterns showed a pure anatase single phase, without any segregation of Fe into particulate. With varying $^{57}$ Fe concentration, we could observe unusual magnetic phenomena in these materials. Doping $^{57}$ Fe into the Ti $O_2$ nonmagnetic semiconductor formed magnetic properties, but the gradual increase of $^{57}$ Fe concentration decreased rapidly the ferromagnetic properties rather than enhanced the ferromagnetic properties. Obvious ferromagnetic behavior was shown for the samples with x$\leq$0.01, while paramagnetic behavior was shown for the sample with x$\geq$0.03. These phenomena could be verified using Mossbauer measurement. Separation of the ferromagnetic phase (sextet) and the paramagnetic phase (doublet) of the samples with different $^{57}$ Fe concentration was characterized. Samples with x$\leq$0.01 have sextet and doublet simultaneously, but samples with x$\geq$0.03 have only doublet at room temperature. This indicates that the sample x$\leq$0.01 have the ferromagnetic phase at room temperature. This result corresponded with the M-H loops referenced above and reveals an interesting feature that there is a critical limit of $^{57}$ Fe concentration (0.01$\leq$0.01 samples was fundamentally attributable to the paramagnetic phase as well as the ferromagnetic phase.e.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.348-351
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• 2003

산소 과전압이 낮은 $MnO_2$를 촉매로 사용하여 반도체 산화물계의 산소선택성 전극을 제조하고 산화물 coating층의 미세구조와 전기화학적 특성을 분석하였다. Ti 기판에 열분해 법을 이용하여 $MnO_2$ 피막을 형성하였고, 또한 PVDF : $MnO_2$의 함량비를 1 : 1에서 1 : 40까지 정량적으로 변화시키고 DMF의 함량을 각각의 고정된 PVDF : $MnO_2$의 함량비에서 변화시켜 Pb전극에 1.5 mm/sec의 속도로 5회 dipping하여 $MnO_2$ 피막층을 형성 하였다. $450^{\circ}C$에서 1시간 열분해하여 약 $1\;{\mu}m$의 $MnO_2$ 피막층이 형성되었으나 Ti 기판과의 접착력이 약하여 피막자체에 대한 전기화학적 특성을 관찰할 수 없었다. PVDF : DMF = 4 : 96인 경우 pb 전극의 피막층이 얇기 때문에 박리현상이 일어났으며 이는 산화물 용제의 낮은 점도 때문인 것으로 판단된다. 또한 PVDF : DMF = 10 : 90의 경우는 5회 dipping 하여 약 $150\;{\mu}m$의 피막층을 형성하였다. PVDF : $MnO_2$의 함량비가 1:1에서 1:6 까지는 DMF의 함량에 무관하게 전극 특성이 나타나지 않았지만 $MnO_2$의 양이 상대적으로 증가하면 cycle이 증가하더라도 거의 일정한 전류 값을 갖고 $MnO_2$와 PVDF의 비가 20:1 이상의 조성에서는 균일한 CV 특성을 나타냈다. 이는 $MnO_2$가 효과적으로 촉매 작용을 한 것으로 판단되며 anodic polarization에 의한 산소 발생 과전압도 약 1.4V 정도로 감소되었다.동등한 MSIL 코드를 생성하도록 시스템을 컴파일러 기법을 이용하여 모듈별로 구성하였다.적용하였다.n rate compared with conventional face recognition algorithms. 아니라 실내에서도 발생하고 있었다. 정량한 8개 화합물 각각과 총 휘발성 유기화합물의 스피어만 상관계수는 벤젠을 제외하고는 모두 유의하였다. 이중 톨루엔과 크실렌은 총 휘발성 유기화합물과 좋은 상관성 (톨루엔 0.76, 크실렌, 0.87)을 나타내었다. 이 연구는 톨루엔과 크실렌이 총 휘발성 유기화합물의 좋은 지표를 사용될 있고, 톨루엔, 에틸벤젠, 크실렌 등 많은 휘발성 유기화합물의 발생원은 실외뿐 아니라 실내에도 있음을 나타내고 있다.>10)의 $[^{18}F]F_2$를 얻었다. 결론: $^{18}O(p,n)^{18}F$ 핵반응을 이용하여 친전자성 방사성동위원소 $[^{18}F]F_2$를 생산하였다. 표적 챔버는 알루미늄으로 제작하였으며 본 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으로 보고, 수학적 창의성 중 특히 확산적 사고에 초점을 맞추어 개방형 문제가 확산적 사고의 요소인 유창성, 독창성, 유연성 등에 각각 어떤 영향을 미치는지 20주의 프로그램을 개발, 진행하여 그 효과를 검증하고자

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.274-281
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• 1999

Usually sputtering and electroless plating methods were used for manufacturing metal-alloy thin film magnetic memory devices. Since electroless plating method has many merits in mass production and product variety com­pared to sputtering method, many researches about electroless plating have been performed in the United State of America and Japan. However, electroless plating method has not been studied frequently in Korea. In these respects the purpose of this research is manufacturing Co-Mn-P alloy thin film on the corning glass 2948 by electroless plating method using sodium hypophosphite as a reductant, and analyzing deposition rate, alloy composition, microstructure, and magnetic characteristics at various pH's and temperatures. For Co-P alloy thin film, the reductive deposition reaction 0$\alpha$urred only in basic condition, not in acidic condition. The deposition rate increased as the pH and temperature increased, and the optimum condition was found at the pH of 10 and the temperature of $80^{\circ}C$. Also magnetic charac­teristics was found to be most excellent at the pH of 9 and the temperature of $70^{\circ}C$, resulting in the coercive force of 8700e and the squareness of 0.78. At this condition, the contents of P was 2.54% and the thickness of the film was $0.216\mu\textrm{m}$. For crystal orientation, we could not observe fcc for $\beta$-Co. On the other hand,(1010), (0002), (1011) orientation of hcp for a-Co was observed. We could confirm the formation of longitudinal magnetization from dominant (1010) and (1011) orientation of Co-P alloy. For Co-Mn-P alloy deposition, coercive force was about 1000e more than that of Co P alloy, but squareness had no difference. For crystal orientation, (l01O) and (lOll) orientation of $\alpha$-Co was dominant as same as that of Co- P alloy. Likewise we could confirm the formation of longitudinal magnetization.