• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.41.1-41.1
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• 2013

우주 자기장의 기원은 잘 알려져 있지 않다. 크게 나누어서 우주론적인 기원과 천문학적인 기원을 고려할 수 있다. 자기장의 기원이 무엇이든지 간에, 난류는 씨앗자기장을 증폭시키는데 큰 역할을 한다. 본 발표에서는 천문학적인 기원을 가지는 씨앗자기장이 난류 내에서 어떻게 성장하는 지를 논의한다. 또한 과연 관측을 통해서 천문학적 기원과 우주론적 기원을 구분할 수 있는 지를 논의한다.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.147-153
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• 2008

It has been well-known that the Fe/GaAs heterostructure has a small lattice mismatch of 1.4% between Fe and GaAs, and the Fe layer is grown epitaxially on the the GaAs substrate. There are rich physics are observed in the GaAs/Fe interface, and the spininjection is actively studied due to its potential applications for spintronics devices. We fabricated Fe wedge layer in the thickness range $0{\sim}3.4$ nm on the GaAs(100) surface with 5-nm thick Au capping layer. The magnetic anisotropy of the Fe/GaAs system was investigated by employing Brillouin light scattering(BLS) measurements in this study. The spin wave excitation of Fe layer was studied as the function of intensity and the in-plane angle of external magnetic field, and thickness of Fe layer. Also these various dependences were analyzed with analytic expression of spin wave surface mode in order to determine the magnetic anisotropies. It has been found that the GaAs/Fe/Au system has additional uniaxial magnetic anisotropy, while the bulk Fe has biaxial anisotropy. The uniaxial anisotropy shows increasing dependency respected to decreasing thickness of Fe layer while biaxial anisotropy is reduced with Fe film thickness. This result allows the analysis that the uniaxial anisotropy is originated from interface between GaAs surface and Fe layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.1-11
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• 1993

A suppression of turbulent fluid motion and a control of oxygen and dopants could be improved by application of magnetic field in Czochralski growth of silicon. The effect of an axial magnetic field on Czochralski system was numerically calculated. The fluid motions induced by temperature gradients and by crystal and crucible rotations were suppressed by magnetic force. The S/L interface was gradually flattened in proportion to the increase of magnetic field due to a reduced ascending velocity in the vicinity of center line. The t.emperature distributions in the melt at 8=0.3 Tesla were similar to those analyzed by the conduction heat transfer only. The dissipated amounts of heat flux from melt and crystal surfaces by Ar gas blowing was Jess than 3 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.260-260
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• 2010

OTFT소자는 각 박막계면간의 접촉성에 따라 그 성능이 좌우 된다는 것은 널리 알려진 사실이다. 즉 박막계면간의 접촉성 저하는 계면간의 결함을 형성하여 OTFT소자 성능을 저하시킨다. 이러한 결함을 고품질의 자기조립단분자막을 제작함으로써 박막계면간 결함을 최소화 할 수 있다. 이러한 고품질의 자기조립단분자막 형성은 박막계면간의 결함을 최소화 하기때문에 고성능OTFT소자 제작시 박막계면간 접촉성 향상에 효율적으로 적용할 수 있을것이다. 이 논문에서는 계면간의 접촉성 향상을 위해 실리콘 웨이퍼 위에 3-Aminoproplytriethoxtsilane과 용매인 무수톨루엔을 이용하여 고품질의 자기조립단분자막을 제작 하였으며 고품질을 자기조립단분자막 성장 조건을 찾기 위해 엄격한 수분조절 및 APS농도, 담근시간, 온도를 조절하여 각기 다른 조건의 샘플을 제작하였다. 또한 APS성장 분포를 알기위하여 접촉각 측정기를 이용하여 접촉각을 측정 하였고 AFM 이용하여 실리콘 웨이퍼에 생성된 박막의 균질도를 측정하였다. 그 결과 APS농도(33%) 24시간 $25^{\circ}C$, APS농도(33%) 24시간 $70^{\circ}C$, APS농도(33%) 72시간 $25^{\circ}C$, APS농도 (33%) 72시간 $70^{\circ}C$ 샘플이 기존에 알려진 APS 접촉각인 $19^{\circ}C{\sim}21^{\circ}C$ 접촉각이 나왔으며 AFM 이미지 또한 높은 균질도를 보였다. 이 결과 고품질의 APS단분자막은 농도와 시간 그리고 온도에 영향은 받으며 이렇게 완성된 단분자막은 높은 균질도를 가지게 된다. 현재 실험을 통해 얻어진 고품질의 자기조립단분자막 성장 조건을 이용하여 OTFT소자 제작하고 있으며 고품질의 자기조립단분자막 형성에 의해 결함을 최소화 하므로써 박막계면간 옴성결합을 형성하여 OTFT소자의 성능 향상이 기대되어 진다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.17-20
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• 2004

We derive specific heat gap at the critical temperature as an exact anylitical function of applied magnetic field by using the thermodynamics. And we calculate numerical value of specific heat gap for some superconductors with the derived results and discuss the physical meaning. And it will be discussed that gap of specific heat discontinuity under certain magnetic field intensity become zero at the critical temperature.

• Journal of the Korean Home Economics Association
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• v.41 no.11
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• pp.171-187
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• 2003

The purpose of this study was to measure the effects of self-growth group counseling program for children in a group home. The results of this study are as follows. First, the self-growth group counseling program was effective to improve self esteem. The most significant increases were seen in the global self-esteem and school-academic self-esteem. Second, the group cohesion and participation frequency of the program were improved, as the session was progressed. Third, as the changes of individual, the understanding and acceptance of oneself and the others are improved. So, impulsivity and aggression became lower, and problem behavior was less.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.140-141
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.163-164
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.73-74
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• 2010

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.31-31
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• 2012