• Proceedings of the KIPE Conference
• /
• 2015.11a
• /
• pp.121-122
• /
• 2015

무선 전력 전송에서 자기장을 이용하는 방식은 인덕티브 커플링 방식과 자기 공진 방식이 있다. 자기 공진 방식은 송수신 코일의 크기를 작게 할 수 있고, 인덕티브 방식보다 전력 수신할 수 있는 범위가 넓다. 본 논문에서는 모바일 기기를 위한 자기 공진 무선 전력 전송의 표준 주파수로 유력한 6.78MHz 시스템을 구성하고, 직렬 공진 송신과 병렬 공진 수신을 제안한다. 전자파 노이즈를 억제하기 위하여 LC Low Pass Filter를 추가한 Half-bridge 인버터 송신 회로를 사용하여, 5.5W급 Smart phone 충전을 위한 Prototype을 제작 및 동작과 특성을 검증하였다.

• Journal of Welding and Joining
• /
• v.17 no.2
• /
• pp.97-103
• /
• 1999

The dynamic resistance monitoring in primary circuit is one of the important issues. Because in-process and real time quality assurance of resistance spot weld is needed to increase the product reliability. In this study, new dynamic resistance detecting method is proposed as a practical manner of weld quality assurance using instantaneous current and voltage measured at the primary circuit. and also, various patterns of primary dynamic resistance curve are characterized with the macro photograph and the weldability lobe curve. It is found that the primary dynamic resistance patterns are basically similar to those of the secondary, but there is evident advantage such as no extra devices are needed to obtain the quality information and eventually real time feedback control will be possible.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.4 s.346
• /
• pp.16-22
• /
• 2006

Gigabit transimpedance amplifiers are realihzed in submicron CMOS technologies for Gigabit Ethernet applications. The regulated cascode technique is exploited to enhance the bandwidth and noise performance simultaneously so that it can isolate the large input parasitic capacitance including photodiode capacitance from the determination of the bandwidth. The 1.25Gb/s TIA implemented in a 0.6um CMOS technology shows the measured results of 58dBohm transimpedance gain, 950MHz bandwidth for a 0.5pF photodiode capacitance, 6.3pA/sqrt(Hz) average noise current spectral density, and 85mW power dissipation from a single 5V supply. In addition, a 10Gb/s TIA is realized in a 0.18um CMOS incorporating the RGC input and the inductive peaking techniques. It provides 59.4dBohm transimpedance gain, 8GHz bandwidth for a 0.25pF photodiode capacitance, 20pA/sqrt(Hz) noise current spectral density, and 14mW power consumption for a single 1.8V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.8 s.338
• /
• pp.53-60
• /
• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.