• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.208-213
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• 2011

We calculated the EPR (electron paramagnetic resonance) line-shape function. The line-widths of a -doped single crystal was studied as a function of the temperature with 0.5 and 2 at. at a frequency of (X-band). The line-width decreases with increasing temperature, such temperature behavior of the line-width can indicate a motional narrowing of the spectrum, when impurity ions substitute for host ions in an off-center position, and thus there can be fast jumping of dipoles between several symmetrically equivalent configurations. Therefore, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition problems.