• Title/Summary/Keyword: 이중센서

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Design of Modified Flooding Algorithm Applicable to Sensor Network (센서 네트워크에 적용 가능한 수정된 Flooding 알고리즘 개발)

  • Kim, Sung-Ho;Kim, Si-Hwan
    • Journal of the Korean Institute of Intelligent Systems
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    • v.17 no.1
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    • pp.32-38
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    • 2007
  • Wireless Ad-Hoc network which doesn't utilize any established infrastructure requires different communication protocols. Among them, Flooding algorithm is generally used in wireless Ad-Hoc network for packet transmission. However, Flooding algorithm has many drawbacks such as energy consumption according to the increase of nodes. Therefore, a modified flooding algorithm which can effectively overcome the aforementioned drawbacks is proposed in this paper. The performance of the proposed scheme is shown by various simulation studies.

Broadcast Redundancy Reduction Algorithm for Enhanced Wireless Sensor Network Lifetime (무선 센서 네트워크의 수명 향상을 위한 브로드캐스트 중복 제거 알고리즘)

  • Park, Cheol-Min;Kim, Young-Chan
    • Journal of Internet Computing and Services
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    • v.8 no.4
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    • pp.71-79
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    • 2007
  • The communicative behaviors in Wireless Sensor Networks(WSNs) can be characterized by two different types: routing and broadcasting. The broadcasting is used for effective route discoveries and packet delivery. However, broadcasting shorten the network lifetime due to the energy overconsumption by redundant transmissions. In this paper, we proposed a algorithm that remove redundant forward nodes based on Dominant Pruning method using 2-hop neighbors knowledge. Simulation results show that the proposed algorithm appears superior performance in respect of the number of forward nodes and the network lifetime.

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Real-time monitoring system for management of chemically management of chemically contaminated water pipeline (유해화학물질 이송관로 파손누수 실시간 감시 기술)

  • Kim, Joon-Seok;Yoon, Byoung-Jo;Seo, Jae-Soon
    • Proceedings of the Korean Society of Disaster Information Conference
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    • 2015.11a
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    • pp.195-196
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    • 2015
  • 유해화학물질 이송관로의 실시간 유지관리를 위하여 파손사전 예방감시를 위한 이중구조 파이프 제작, GIS관망 구축을 위한 측량 및 시공 속성정보 수집을 위한 스마트 폰 앱 프로그램 개발, 실시간 감시를 위한 서버프로그램 개발을 수행하였다. 또한, 파일럿규모의 야외시험시설을 구축하여 시스템 동작여부를 확인하였다. 파손 예방은 파이프에 부착된 센서 케이블을 통하여 감지하도록 하였고, 누수는 압력센서를 일정한 간격으로 설치하여 시험하였다. VRS 측량장비와 스마트폰을 연계할 수 있는 앱 프로그램으로 실시간 자료 수집을 수행할 수 있도록 하였고, 감시 서버프로그램을 통하여 실시간 감시 및 알람이 가능하도록 하였다.

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태양 활동의 변화에 따른 변화에 따른 저위도 상부 이온층 변화

  • 김희준;박재흥;민경욱
    • Bulletin of the Korean Space Science Society
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    • 2004.04a
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    • pp.86-86
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    • 2004
  • 다목적 실용위성 1호의 데이터를 이용하여 관측기간인 2000년 6월 28일에서 2001년 8월1일까지의 고도 685km, 22:50LT(Local Time) 이온층을 조사하였다. 데이터는 이온층 측정 센서(Ionospheric Measurement Sensor)로부터 얻은 전자 온도와 전자 밀도를 이용하였으며, 자기 위도로 -60$^{\circ}$-+60$^{\circ}$ 사이의 중ㆍ저위도의 값을 분석하였다. 관측 기간은 지자기 변화를 나타내는 Kp index나 태양 활동을 나타내는 F10.7이 크게 변화한 태양 극대기 기간으로, 이중 일변화의 F10.7을 통해 전자 온도와 전자 밀도의 변화를 조사하였다. (중략)

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8체질 맥법 검증을 위한 요골동맥 파형 측정 센서 개발

  • 문성수;정용원;이중재;공준웅;이흥세;전국진
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.9-12
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    • 2001
  • In oriental medicine, it is possible to classify each person into eight kinds of constitutions based on the eight constitutional medicine theory. We developed a piezoelectric 3-channel tactile sensor using PVDF (polyvinylidene fluoride) film for pulse detection of the radial artery. High frequency buffer (impulse buffer), amplifier, 60 Hz noise notch filter and low pass filter were integrated on three sheets of PCB board. The pulses of the radial artery at three points were checked using our system. Each constitution of the eight ones has different combinations of pulses.

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Analytic Results for the Double Short Turn Sensor Structure of Rotor Winding in Generators (발전기 회전자권선 단락센서의 이중화구조 실험결과 분석)

  • Lee, Young-Jun;Ju, Young-Ho
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.2054-2055
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    • 2008
  • Due to the severe operation environment, the accidents in the rotor winding increase lately. To prevent the rotor's damage from short turn phenomena, research staffs in Korea Electric Power Research Institute develop sensors to detect short turn efficiently. In this paper, we present the double-structured short turn sensor which evluates the healthiness of rotor winding.

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Electrochemical Growth of Palladium Nanowire for Highly Sensitive Hydrogen Sensor (고감도 수소센서를 위한 팔라듐 나노선의 전기화학적인 성장)

  • Jo, S.Y.;Kang, B.R.;Im, Y.H.
    • Journal of Energy Engineering
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    • v.19 no.1
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    • pp.21-24
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    • 2010
  • We present a novel electrochemical method to fabricate a single Pd nanowire based on direct current assisted dielectropheresis (DEP) process between two predefined metal electrodes. The electrochemical methods was investigated as functions of frequency and voltage for optimal growth conditions of Pd nanowire. The synthesized Pd nanowire have a good resistance of $1\;k{\Omega}$, diameters of several hundred nanometers on average and lengths of $8\;{\mu}m$. Finally, the single Pd nanowire was capable of detecting hydrogen in the concentration range from 100 to 2500 ppm with high sensitivity and response time, thus demonstrating its suitability for use as a hydrogen sensor.

Operation of a wide dynamic range CMOS image sensor based on dual sampling mechanism and its SPICE simulation (이중 샘플링 기반의 넓은 동작 범위 CMOS 이미지 센서의 동작 및 시뮬레이션을 통한 특성 분석)

  • Kong, Jae-Sung;Jo, Sung-Hyun;Lee, Soo-Yeun;Choi, Kyung-Hwa;Seo, Sang-Ho;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.19 no.4
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    • pp.285-290
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    • 2010
  • In this paper, a dynamic range(DR) extension technique based on a 3-transistor active pixel sensor(APS) and dual image sampling is proposed. The feature of the proposed APS is that the APS uses two or more photodiodes with different sensitivities, such as a high-sensitivity photodiode and a low-sensitivity photodiode. Compared with previously proposed wide DR(WDR) APS, the proposed approach has several advantages, such as no-external equipments or signal processing, no-additional time-requirement for additional charge accumulation, simple operation and adjustable DR extension by controlling parasitic capacitance and sensitivity of two photodiodes. Approximately 16 dB of DR extension was evaluated from the simulation for the situation of 10 times of sensitivity difference and the same size of parasitic capacitance between those two photodiodes.

A Study on the Development of Quality Inspection System for Connector Components Used in Automotive Wiring (자동차 배선용 커넥터 부품의 품질 검사 시스템 개발에 관한 연구)

  • Ryu, Jeong-Tak;Kim, Pil-Seok;Lee, Hyeong-Ju
    • Journal of Korea Society of Industrial Information Systems
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    • v.26 no.6
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    • pp.11-16
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    • 2021
  • In this paper, a quality inspection system was developed to identify the defective assembly of connectors used in automobile wiring. For waterproof connectors, an internal seal must be inserted for waterproofing. However, there are cases where it is omitted or double-inserted during production. An automatic inspection jig was designed using photosensors and touch switches to classify good and bad connector components. In the case of the existing visual inspection, 6,400 connectors were inspected when 5 people inspected for 8 hours. However, when using the inspection jig developed under the same conditions, 20,000 pieces were inspected. In other words, the productivity is greatly improved compared to the conventional visual inspection.

Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications (바이오 센서 적용을 위한 수직형 이중게이트 InGaAs TFET의 게이트 열화 현상 분석)

  • Baek, Ji-Min;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.31 no.1
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    • pp.41-44
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    • 2022
  • In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al2O3/HfO2 = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 103 at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.