• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.6
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• pp.90-96
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• 2014

The electrical resistivity of concrete can be related to two processes involved in corrosion of reinforcement: initiation (chloride penetration) and propagation (corrosion rate). The resisistivity of concrete structure exposed to chloride indicates the risk of early corrosion damage, because a low resistivity is related to rapid chloride penetration and to high corrosion rate. Concrete resistivity is a geometry-independent material property that describes the electrical resistance, which is the ratio between applied voltage and resulting current in a unit cell. In previous study, it was realized that the resistivity of concrete depended on the moisture content in the concrete, microstructural properties, and environmental attack such as carbonation. The current is carried by ions dissolved in the pore liquid. While some data exist on the relationship between moisture content on electrical resistivity of concrete, very little research has been conducted to evaluate the effect of chloride on the conduction of electricity through concrete. The purpose of this study is to examine and quantify the effect of chloride content on surface electrical resistivity measurement of concrete. It was obvious that chloride content had influenced the resistivity of concrete and the relationship showed a linear function. That is, concrete with chloride ions had a comparatively lower resistivity. Decreasing rate of resistivity of concrete was clear at early time, however, after 50 days resistivity was constant irrespective of chloride concentration. Conclusively, this paper suggested the quantitive solution to depict the electrical resistivity of concrete with chloride content.

• Applied Biological Chemistry
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• v.47 no.4
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• pp.390-395
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• 2004

In order to characterize ion channels present in tomato roots, microsomes were incorporated into an artificial lipid bilayer arranged for electrophysiological analysis. Of the five different ion channels that could be found, a channel of 450 pS conductance was found most frequently. This channel displayed subconductance states of 450, 257 and 105 pS. All subconductance states showed linear current-voltage relationships. At positive holding potentials, high frequency of transient channel openings was observed; however, at negative potentials, the open times were long and open probability high. Po was 0.83 at -40 mV. When an additional 50 mM $K^+\;or\;Na^+$ was added to the cis side of bilayer, the reversal potentials shifted in the negative direction to near -10 mV. Thus, the 450 pS cation channel selects poorly between $K^+\;and\;Na^+$. In the presence of $100\;{\mu}M$ metal ions, the channel activity was severely inhibited by $La^{3+},\;Ba^{2+},\;and\;Zn^{2+}$, and Po was decreased to 0.2 or even less. However, $Al^{3+}\;and\;Cd^{2+}$ decreased the activity by only 20%. Interestingly, each metal ion showed different kinetics of channel inhibition. While $500\;{\mu}M\;La^{3+}$ inhibited the activities of all subconductance state, 1 mM $Zn^{2+}$ inhibited all except the 105 pS state. $Cd^{2+}$ changed the gating of the channel from a long-opening state to brief transient openings even at negative holding potentials. These data represent that the metal ions may have different binding sites on the channel protein and could be useful modulators and probes to investigate structural characteristics as well as the functional roles of the 450 pS channel on the root physiology.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.96-99
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• 2000

In order to improve the rate capability of lithium manganese oxide thin film, we prepared the patterned cathode films by conventional lithography and etching techniques. From the investigation of discharge current density effects on discharge curves of cathode films, the rate capability was greatly improved due to increase of lithium intercalation kinetics fur charge transfer.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.891-897
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• 1997

본 논문은 용액법으로 성장시킨 저밀도 폴리에틸렌 박막의 냉각 조건에 따른 결정화도의 관계와 냉각 조건에 따른 전기전도현상, 유전특성 및 절연파괴에 관하 연구로서 박막은 140[$^{\circ}C$]에서 2시간 유지후 냉각 조건을 달리하여 제작하였다. 결정화도는 XRD를 이용하여 측정하였으며 냉각 속도가 빠를수록 결정화도가 감소함을 볼 수 있었다. 전기전도현상은 냉각 조건에 무관하게 저전계에서는 이온전도특성이 나타나고 고전계에서는 공간전하제한전류이론이 지배적이다. 절연파괴전계는 냉각속도가 증가할수록 증가하고 self-healing절연파괴 방법에서는 시험회수가 증가할수록 증가하였다.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.382-388
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• 1992

Electromigration은 인가된 전계하에서 발생하는 전자풍력에 의한 금속 이온의 현 상이며, 반도체 디바이스의 주요 결함 원인으로 보고되어 왔다. 선폭 1$mu extrm{m}$의 Al-1%Si 금속 박막전도체에 대한 electromigration 수명 실험을 위해 인가된 d.c. 전류밀도는 10MA/cm2 이었고, electromigration에 대한 활성화 에너지 측정을 위한 분위기 온도는 $80^{\circ}C$, 10$0^{\circ}C$ 그리고 $120^{\circ}C$이었다. 평균수명 및 신뢰성에 대한 보호 절연막 효과를 위해 두께 3000 $\AA$의 SiO2 산화막을 sputtering 진공증착기를 사용하여 Al-1%Si 금속 박막 전도체 위에 증착하였 다. 주요 연구 결과는 다음과 같다. Al-1%Si 금속 박막 전도체의 electromigration에 대한 활성화 에너지값은 0.75eV이었고 온도가 증가함에 따라 Al-1%Si의 수명은 감소하였고 신 뢰성은 향상되었다. SiO2 보호막은 electromigration에 대한 저항성을 크게 함으로써 평균수 명을 향상시켰으며, electromigration failure는 lognormal failure distribution은 갖는 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.223-226
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• 1998

In this paper, we have investigated how morphology and electrical properties in Polyphenylene sulfide(PPS) are changed by uniaxial elongation. XRD pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. Electrical conduction mechanism of PPS is explained as schottky emission from analysis of electrical current. The electrical current is decreased by increasing elongation ratio. The conductivity is changed remarkably above the glass transition temperature around $(82^{\circ}C)$. The band gap of PPS is evaluated as 3.9-4(eV) from the results of photoconductivity. Increarnent of elongation ratio gives us some information about deep trap formation from photocurrent.

• 전기의세계
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• v.9
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• pp.11-17
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• 1962

본 연구는 냉음극방전등의 기동특성에 방사성동위원소의 이온화작용을 이용하여 기동특성의 개량을 시도하려는 것이다. 냉음극이나 열음극방전등을 막론하고 일반으로 사용되는 것은 상용전압인 저전압에서는 직접 점등이 불능하기 때문에 순시 또는 한시적인 승압장치가 필요하나. 예컨데 네온 관과 같는 냉음극방전등에서는 한시적인 승압 및 방전전류의 제한때문에 누설변압기를 사용하고 또 형광방전관 및 저압수은방전관과 같은 열음극방전관은 저전압기동을 위한 음극의 가열과 순시적인 승압장치로 점등관 및 쵸크코일등을 사용하고 있다.이와같이 방전등에서는 고전압기동으로 말미암은 승압장치 때문에 경제적 부담과 전력의 손실을 초래하고 있다. 그러기 때문에 저전압기동을 해결하는 것과 방전등의 방전개시전압의 부정으로 인한 방전개시전압의 시간적인 변동을 해결하는 것이 중요한 방전등 기동특성의 개량이다. 그리고 일반방전등에서는 그다지 문제되여 있지 않지만 방전이 늦임도 기동의 한 요소로 되어있다.

• Analytical Science and Technology
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• v.14 no.6
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• pp.540-544
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• 2001

Determination of cyanide ion has been studied by adsorptive stripping voltammetry using hanging mercury electrode. Cyanide ion complexed with copper ion is adsorpbed on the electrode and oxidised at the positive potential scan. Optimal conditions of CN determination were found to be ; supporting electrolyte solution ; 0.1 M NaCl of ammonium buffer at pH 10, accumulation potential; -800 mV vs Ag/AgCl, accumulation time ; 300 s, scan rate ; 50mV/s. The linear concentration of cyanide ion was observed in the range $1{\times}10^{-8}$, $1{\times}10^{-7}M$. The detection limit(n/s=3) was $0.13{\mu}g/L$($5{\times}10^{-9}M$) with 3.5% RSD.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.55-55
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• 2015

오늘날 전해동박은 리튬이온전지의 집전체, PCB, FPCB등의 핵심부품으로써, 산업 전반에 걸쳐 널리 사용되고 있다. 그러나 전자 회로의 미세화로 인한 열 발생, 낮은 강도에 의한 신뢰성 하락 등이 문제가 되고 있는 실정이다. 구리에 나노 쌍정을 높은 밀도로 형성하게 되면, 전기 저항의 변화 없이 기계적 강도를 높이는데 도움이 된다. 특히 펄스 전해증착에서는 높은 전류밀도가 인가되기 때문에 고밀도의 나노쌍정을 얻을 수 있다는 점이 여러 논문에서 보고되었다. 이번 연구에서는 펄스도금 조건에서 온도 조건의 변화를 통해 강도가 향상됨을 알 수 있었다.