• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.178-179
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• 2003

단일기본모드 수직공진표면광레이저(VCSELs)는 광네트워크, 광연결, 광저장 및 레이저 프린팅 등 다양한 분야에 응용이 가능한 소자로서 많은 관심과 연구가 증대되고 있다. 일반적으로 VCSELs은 공간홀버닝(spatial hole burning)과 열 렌즈효과(thermal lensing)로 인하여 단일기본모드로 동작하기가 쉽지 않다. 지금까지 여러 가지 연구가 진행되고 있는데 대표적인 예로서 VCSEL의 공진기를 길게 하거나 출력경 표면을 정교하게 식각하는 방법, 그리고 이온 주입구경과 산화막을 함께 사용한 것들이 있다. (중략)

• Proceedings of the Korean Magnestics Society Conference
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• 1995.05a
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• pp.102-103
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• 1995

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.573-576
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• 1992

Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.61-62
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• 2007

low angle forward reflected neutral beam etching system으로 식각한 후 SIMS depth profile을 이용하여 에너지 침투 깊이에 따른 중성빔 에너지를 분석하여 중성화 과정에서 에너지와 flux의 손실이 있었다. 기존의 two-grid 대신에 three-grid를 사용하여 에너지의 변화없이 이온 flux 및 중성빔 flux가 향상됨을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.263-267
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• 1996

Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.562-562
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• 2013

산소 플라즈마는 음이온을 발생시키는 음전성 플라즈마로서 감광제 세정이나 금속, 폴리실리콘 등의 식각을 위해 할로겐 가스와 혼합하여 반도체나 디스플레이 공정에 광범위하게 사용되고 있다. 산소 플라즈마는 아르곤 플라즈마와 그 특성이 상이하고, 다량의 음이온이 국부적으로 만들어지므로 음이온의 공간분포 진단이 중요하다. 본 연구에서는 평판형 부유형 탐침에 고조화파 분석법을 적용하여 양이온의 밀도를 구하고, 직류 차단 커패시터를 제거하여 접지전위에서 전자 전류 측정을 통하여 위치에 따른 전자의 상대적인 공간 분포를 얻었다. 이러한 방법으로 측정된 양이온과 전자의 공간 분포로부터 음이온의 공간 분포를 구할 수 있었다. 가스 압력, 산소 첨가량, 인가 전력 등 여러 조건에서 측정된 음이온의 분포는 이론적인 경향성과 유사함을 확인할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.485-490
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• 1994

The reactive ion etching characteristics of aluminum oxide films, prepared by PECVD, were investigated in the CCl4 plasma. The atomic chlorine concentration and the DC self bias were determined at various etching conditions, and their effects on the etch rate of aluminum oxide film were studied. The bombarding energy of incident particles was found to play the more important role in determining the etch rate of aluminum oxide rather than the atomic chlorine concentration. It is considered to be because the bombardment of ions or neutral atoms breaks the strong Al-O bonds of aluminum oxide to help activate the formation reaction of AlCl3 which is the volatile etch product.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.112-118
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• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.13-20
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• 2014

In this paper, the effects of a nonionic surfactant on the etch uniformity and the etch profile during the wet-etching process of high-purity aluminum were investigated for the fabrication of uniform micropattern arrays. To improve the surface roughness of a high-purity aluminum plate, a mechanical lapping process and an electrolytic polishing process were used. After electrolytic polishing process, the surface roughness, Ra, of the high-purity aluminum plate was improved from $1.25{\mu}m$ to $0.02{\mu}m$. A photoresist was used as an etching mask during the aluminum etching process, where the mixture of phosphoric acid, acetic acid, nitric acid, a nonionic surfactant and water was used as the aluminum etchant. Different amounts of the Triton X-100 nonionic surfactant were added to the aluminum etchant to investigate the effect of a nonionic surfactant during the wet-etching process of high-purity aluminum. The etch rate and the etch profile were measured by an optical interferometer and a scanning electron microscope.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.151-157
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• 1993

Abstract We have fabricated Y-Ba-Cu-O superconducting thin films by in-situ on-axis rf magnetron sputtering method using $Y_1$B$a_2$C${u_4}\;{_2O_x}$ nonstoichiometric target. Reactive ion etching (RIE) method was used in patterning the films. We have investigated the properties of patterned films, and compared the properties of the films before and after patterning. As the line width of the pattern decreases from 5${\mu}$m to 2${\mu}$m, a slight but not significant degradation in superconducting properties of the patterned films is observed. The bridge patterns are found to have clean edges and good electrical properties enough to be applied in device applications. From the result of this research, the possibility of submicron patterning by RlE is confirmed.