• Journal of Periodontal and Implant Science
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• v.28 no.4
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• pp.601-611
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• 1998

Ion irradiation is a very promising tool to modify the chemical structure and physical properities of polymers. This study was aimed to evaluate the cellular adhesion to ion beam-irradiated surface of biodegradable poly-l-lactide(PLLA) membrane. The PLLA membrane samples were irradiated by using 35 KeV $Ar^+$ to fluence of $5{\times}10^{13}$, $5{\times}10^{14}$ and $5{\times}10^{15}\;ion/cm^2$. Water contact angles to control and each dose of ion beam-irradiated PLLA membranes were measured. Cultured fetal rat calvarial osteoblasts were seeded onto control and each dose of ion beam-irradiated PLLA membranes and cultured. After 24 hours, each PLLA membranes onto which osteoblasts attached were examined by scanning electron microscopy(SEM). Osteoblasts were removed from each PLLA membrane and then, the vitality and the number of cells were calibrated. Alkaline phosphatase of detached cells from each PLLA membranes were measured. Ion beam-irradiated PLLA membranes showed no significantly morphological change from control PLLA membranes. In the measurement of water contact angle to each membrane, the dose range of ion beam employed in this study reduced significantly contact angles. Among them, $5{\times}10^{14}\;ion/cm^2$ showed the least contact angle. The vitalities of osteoblastes detached from each membranes were confirmed by flow cytometer and well attached cells with their own morphology onto each membranes were observed by SEM. A very strong improvement of the cell adhesion and proliferation was observed for ion beam-irradiated surfaces of PLLA membranes. $5{\times}10^{15}\;ion/cm^2$ exhibited the most strong effect also in cellular adherence. ALPase activities also tended to increase in ion beam-irradiated membranes but statistical differences were not found. These results suggested that ion beam irradiation is an effective tool to improve the adhesion and spreading behaviour of the cells onto the biodegradable PLLA membranes for the promotion of membrane-tissue integration.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2009.11a
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• pp.177-177
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• 2009

사용후 핵연료의 건식처리 시 핵연료 다발을 절단하여 voloxidation 즉 휘발산화처리를 하면 고온에 의해 분리가 가능한 핵분열생성물의 분리와 우라늄의 산화에 의한 부피팽창으로 핵연료가 쪼개져서 입도가 작아지고 또한 핵연료가 피복재에서 쉽게 박리되게 된다. 그 결과 폐기물 처리 시에 발열핵종으로 폐기물의 저준위화시에 분리가 요망되는 Cs-137이 분리되는 장점이 있어 습식 재처리에 있어서도 바람직하다. 건식처리에 있어서는 voloxidation 으로 처리된 피복재에는 금속 지르코늄에 불순물로 함유된 우라늄의 의한 방사화 생성물과 피복재 표변에 부착/침투한 방사화 생성물이 방사능을 갖게 된다. 이러한 부착된 TRU 잔류물은 통상 1% 미만으로 알파핵종의 방사능이 원자로에서 배출시에는 고준위 기준치의 약 100배 수준이었다가 30년 냉각후에는 약 1/10 수준으로 저준위화 된다. 지르코늄 금속중에 불순물로 함유된 우라늄의 방사화로 생기는 방사능은 고준위 기준치의 10% 를 넘지 않아서 피복재의 저준위화시에 고려할 필요가 없다. 발생열은 방출시에 고준위 기준치의 약 30 배 수준에서 5년 냉각후에는 기준치 미만이 되며 30년후에는 1/8000 정도로 저준위화 된다. 사용후 핵연료를 습시처리시에 발생하는 고준위 폐기물 중 약 1/4 가 피복재 (hull) 임을 고려하면 피복재의 저준위화는 사용후 연료의 건식처리에 있어서도 필수적인 과정이다. 특히 미국의 고준위 폐기물 처분장 Yucca Mt.의 포기와 우리의 고준위 폐기불 처분장이 공론화되는 싯점에서 저준위화는 매우 필요한 기술이다. 피복재는 방사성 물질의 침투두께가 0.01mm 미만이 대부분으로 저준위화에는 표면제염에 의한 저준위화가 주로 연구되어왔다. 표면제염에 의한 저준화는 이온 빔, laser에 의한 방법, dry ice 분사에 의한 방법이 시도되었다. 염소기체를 이용하여 지르코늄의 산화막을 제거하고자 하였으나 이 산화막이 안정적이어서 표변의 연마, 아크릴 칼의 사용, 표면을 눌러서 처리하는 등 전처리하여서 염소기체 반응에 의한 표면제거 실험이 가장 효과적임이 실험적 결과이었다. 이러한 전처리로 방사능을 1/100 수준으로 낮춘다고 하더라도 지르코늄 금속중에 불순물로 함유된 우라늄의 방사화에 의해 중저준위 폐기물의 범주에서 벗어나지 않으므로 재활용에는 제한이 있다. 또한 전처리(표면제염)하여 분리되는 고준위는 다른 고준위 염폐기물과 함께 처리하여 발열 핵종을 제거하면 중저준위화가 가능하다. 저준위화 된 hull폐기물에는 지르코늄 금속에 불순물로서 함유되어있는 우라늄에 의한 방사능을 갖는데 이들의 제거나 분리는 지르코늄 합금 피복재 원료물질에 불순물로 함유하는 우라늄의 함량을 낮추는 것과 유사한 문제이다. 현재까지 지르코늄합금 피복재에 우라늄이 불순물로 함유된 것을 사용함으로 원자로내에서 방사화되어서 방사능을 갖게 되는 것은 피할 수가 없다. 따라서 저준위화 처리된 피복재는 장기 보관으로 방사능을 감쇠시켜서 재활용하도록 한다. 처리 방법으로는 초고압 압축저장, 시멘트 고화, 합성암석에 의한 고화법 등으로 장기간 보관 후에 금속으로서 재활용한다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.43-50
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• 2014

By the trends of electronic package to be smaller, thinner and more integrative, the reliability of interconnection between Si chip and printed circuit board is required. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with different the thicknesses of electroless Ni-P deposit. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. The high speed shear energy of SAC405 solder joint with $1{\mu}m$ Ni-P deposit was found to be lower without $HNO_3$ vapor, compared to those of over $3{\mu}m$ Ni-P deposit. This could be due to the edge of solder resist in $1{\mu}m$ Ni-P deposit, which provides a fracture location for the weakened shear energy of solder joints and brittle fracture in high speed shear test. With $HNO_3$ vapor, the brittle fracture mode in high speed shear test decreased with increasing the thickness of Ni-P deposit. Then the roughness (Ra) of Ni-P deposits decreased with increasing its thickness. Thus, this gives the evidence that the decrease in roughness of Ni-P deposit for Eelectroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface play a critical role for improving the robustness of SAC405 solder joint.

• Progress in Medical Physics
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• v.21 no.2
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• pp.218-222
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• 2010

As radiation is irradiated from various directions in intensity modulated radiation therapy (IMRT), longer treatment time than conventional treatment method is taken. In case of the patients who have problem to keep same posture for long time because of pain and injury, reducing treatment time through increased dose rate is a way for effective treatment. This study measured and found out the variation of dose and dose distribution in accordance with dose rate variation. IMRT treatment plan was set up to investigate from 5 directions - $0^{\circ}$, $72^{\circ}$, $144^{\circ}$, $216^{\circ}$, $288^{\circ}$ - using ECLIPSE system (Varian, SomaVision 6.5, USA). To confirm dose and dose rate in accordance with dose rate variation, dose rate was set up as 100, 300, 500 MU/min, and dose and dose distribution were measured using ionization chamber (PTW, TN31014) and film dosimeter (EDR2, Kodak). At this time, film dosimeter was inserted into acrylic phantom, then installed to run parallel with beam's irradiating direction, 21EX-S (Varian, USA) was utilized as linear accelerator for irradiation. The measured film dosimeter was analyzed using VXR-16 (Vidar System Corporation) to confirm dose distribution.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.348-353
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• 2012

We investigated chemical states of a $Sb_2Te_3$ thin film with the polycrystalline phase by using high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. The $Sb_2Te_3$ thin film was formed by sputtering. The rhombohedral phase was confirmed by x-ray diffraction. To remove the surface oxide, we performed $Ne^+$ ion sputtering for 1 hour with the beam energy of 1 kV and post-annealing at $100^{\circ}C$ for 5 min in ultra-high vacuum. We obtained the Te and Sb 4d core-levels spectra with the peaks at the binding energies of 40.4 and 33.0 eV, respectively. The full-width of half maximum of both the Te and Sb $4d_{5/2}$ core-levels is 0.9 eV. The Te and Sb core-levels only show a single chemical state, and we also confirmed the stoichiometry of approximately 2 : 3.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.15-23
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• 2009

Saturation-coverage silyl, $-SiH_3(a)$, overlayers were prepared from $Si_2H_6$ adsorption on three comparative surfaces: clean unmodified; D-precovered; and atomically roughened Si(100). Together with its precursor-mediated adsorption behavior, the surface reactivity of $Si_2H_6$ was found to be the highest on the unmodified Si(100)-$2{\times}1$ surface. This was correlated with its dissociative adsorption mechanism, in which both the $H_3Si-SiH_3$ bond scission and the dual surface $Si-SiH_3(a)$ bond formation require a surface dangling bond 'pair'. The unusually high thermal stability of $-SiH_3(a)$ on the unmodified surface was ascribed to a nearly close-packed $-SiH_3(a)$ coverage of ${\sim}0.9$ monolayer and the consequent lack of dangling bonds on the silyl-packed surface.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1056-1063
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• 2006

Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• Journal of the Korean Magnetics Society
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• v.13 no.2
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• pp.53-58
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• 2003

Annealing effects of exchange bias fields ($H_{2ex}$(top), $H_{lex}$ (bottom)) on composite type NiFe/[FeMn/Mn]$_{80}$/NiFe multilayers have been studied. Three samples with ultra-thin Mn inserted layers on glass/Ta(50 $\AA$)/NiFe(150 $\AA$)/[F $e_{53}$M $n_{47}$(1.25 $\AA$)/Mn(0 $\AA$, 0.11 $\AA$, 0.3 $\AA$)]$_{80}$/NiFe(90 $\AA$)/Ta(50 $\AA$) were prepared by ion beam sputtering. The average x-ray diffraction peak ratios NiFe(111) of FeMn (111) fcc textures for the Mn inserted total thicknesses of 0 $\AA$, 9 $\AA$, and 24 $\AA$ were about 0.65, 0.90, and 1.5, respectively. For the sample without Mn inserted layer, the $H_{2ex}$ of 260 Oe up to 300 $^{\circ}C$ disappeared at 350 $^{\circ}C$. For two multilayer samples with ultra-thin Mn layers of 0.11 $\AA$ and 0.3 $\AA$, the $H_{2exs}$ of 310 Oe and 180 Oe up to 300 $^{\circ}C$ endured of 215 Oe and 180 Oe at 350 $^{\circ}C$, respectively. The $H_{ex}$ (bottom)s of three samples decreased from 100 Oe to 70 Oe up to 250 $^{\circ}C$, while these values increased beyond 300 $^{\circ}C$. This observation can be attributed to less diffusive path of Mn atoms in bottom NiFe than top NiFe layer. The top and bottom coercive fields slightly varied about 5 Oe∼10 Oe. From these results, we could obtain the enhancement of exchange coupling intensity and thermal stability by an ultra-thin Mn inserted layer on NiFe/[FeMn/Mn]$_{80}$/NiFe Multilayers.

• KSBB Journal
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• v.20 no.4
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• pp.253-259
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• 2005

This study was accomplished using attached $A^2/O$ process that contains nonsurface-modified and surface-modified polyethylene media inside the Anaerobic/Anoxic, Oxic tank, respectively. We could make the hydrophobic polyethylene media have hydrophilic characteristics by radiating ion beam on the surface of the media. The objectives of this study is to investigate the removal efficiencies of the organics and nitrogen when the step feed ratio of raw wastewater into anaerobic and anoxic tank is changed. In this case, we assumed that the denitrification rate can be improved because the nitrifiers in anoxic tank can perform denitrification using RBDCOD instead of artificial carbon sources (for example, methanol, etc.). The wastewater injection rate into anaerobic/anoxic tank was set up by the ratio of 10 : 0, 9 : 1, 8 : 2, 6 : 4, and the results of BOD removal efficiency showed similar trends with $93.3\%,\;92.6\%,\;92.4\%\;and\;91.6\%$, respectively. But the BOD removal efficiency (utilization of the organics) in the anoxic tank was in the order of 9 : 1 $(84.8\%)$, 10 : 0 $(77.0\%)$, 8 : 2 $(75.3\%)$, and 6 : 4 $(61.1\%)$. The T-N removal efficiency was most high when the ratio is 9 : 1 $(67.4\%)$, and other conditions, 10 : 0, 8 : 2, 6 : 4, showed $61.3(\%),\;60.7\%,\;55.5\%$, respectively; the ratio 6 : 4 was found to be lowest T-N removal efficiency, lower than the ratio 9 : 1 by $12\%$. Though the nitrification rate of the ratio 10 : 0, 9 : 1, and 8 : 2 showed similar levels, the ratio 6 : 4 showed considerable inhibition of nitrification, ammonia was the great portion of the effluent T-N. The advantages of this process is that this process is cost-saving, and non-toxic methods than injecting the artificial carbon source.