• Title/Summary/Keyword: 이동속도

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Photocurrent study on the splitting of the valence band and growth of $ZnIn_{2}Se_{4}$ single crystal thin film by hot wall epitaxy (Hot wall epitaxy(HWE)법에 의한 $ZnIn_{2}Se_{4}$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.5
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    • pp.217-224
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    • 2008
  • A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

A Preliminary Study of Flume Experiments on the Flow Velocity for Initial Formation of Bedforms on Bimodal Sand-sized Sediments (이정 사질 퇴적물의 층면구조 형성 속도에 대한 수조 실험 예비 연구)

  • Kim, Hyun Woo;Choi, Su Ji;Choi, Ji Soo;Kwon, Yoo Jin;Lee, Sang Cheol;Kwak, Chang Hwan;Kwon, Yi Kyun
    • Journal of the Korean earth science society
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    • v.37 no.4
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    • pp.218-229
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    • 2016
  • The bedform stability diagram indicates the shape and size of bedforms that will occur to a given grain size and flow velocity. The diagram has been constructed from experimental data which have been mostly acquired by flume experiments. Generally, the flume experiments have been performed on well sorted sediments with unimodal grain size distribution, in order to understand relationship between grain size and flow velocity. According to the diagram, a ripple structure initiates to be formed from lower flow regime flat bed, as the flow velocity increases on the surface of fine-sand or medium-sand sediments. This study aims to verify that the experimental result of bedform stability diagram will be reproduced in our flume experimental systems, and also to confirm that the result is consistent not only on well-sorted sand sediments but also on poorly-sorted sand sediments with bimodal grain size distribution. The experimental results in this study show that initiation of 2D or 3D ripple structure on poorly-sorted sand sediments requires higher flow velocity and shear stress than those for initiation of the structure on well-sorted sand sediments. In general, carbonate sediments are characterized by poor sorting due to inactive hydraulic sorting and bimodal grain size distribution with allochems and matrices. The results suggest that the carbonate depositional system possibly need a higher flow velocity for initial formation of 2D or 3D bedform structures. The reason might be the fact that pulling off and lifting of a grain in poorly sorted sediments require more energy due to sorting, friction, stabilization, armour effects, and their complex interaction. This preliminary study warrants additional experiments under various conditions and more accurate analysis on the relationship between formation of bedforms and grain size distribution.

Growth and Photocurrent Properties of CdIn2S4/GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy 법에 의한 CdIn2S4 단결정 박막의 성장과 광전류 특성)

  • Lee, Sang-Youl;Hong, Kwang-Joon;Park, Jin-Sung
    • Journal of Sensor Science and Technology
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    • v.11 no.5
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    • pp.309-318
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    • 2002
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

tans-Resveratrol Content of Varieties and Growth Period in Peanut (땅콩 품종 및 생육기별 trans-Resveratrol 함량)

  • Lee, Mi-Ja;Cheong, Young-Keun;Kim, Hyung-Soon;Park, Ki-Hun;Doo, Hong-Soo;Suh, Duck-Yong
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.48 no.6
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    • pp.429-433
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    • 2003
  • trans-Resveratrol(3,5,4'-trihydroxystilbene) is phenolic compound present in grapes, wines, and peanuts, has been reported to have health benefits including anticarcinogenic effects, protection against cardiovascular diseases and reduced cancer risk. A simple method for the quantitative extraction of trans-resveratrol from peanut has been developed. Optimal conditions for extraction were investigated. Type of solvent, time, and temperature assayed influenced trans-resveratrol yield. Adequate extraction condition was decided to ethanol/water (80:20v/v) maintained at $25^{\circ}C$ for 45 min. After extraction, the protocol consists of sample preparation using a $\textrm{C}_{18}$ solid-phase extraction (SPE) cartridge after concentrate with rotary evaporator and quantified by reversed phase HPLC using a $\textrm{C}_{18}$ column at 308 nm. Analytical methods for measuring trans-resveratrol in peanut were adapted to isolate, identify, and quantify trans-resveratrol in 11 peanut varieties by HPLC (high-performance liquid chromatography) with UV detector, The 11 peanut varieties content ranged from 0.018 to 1.125 $\mu\textrm{g}/\textrm{g}$ with an average of 0.289 $\mu\textrm{g}/\textrm{g}$. The contents were higher in the seeds with than without testa, regardless of varieties. The trans-resveratrol content was Higher in 110, 130 days after sowing than that of other period.

Growth and optical properties for MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot wall epitaxy법에 의한 MgGa2Se4 단결정 박막 성장과 광학적 특성)

  • Moon, Jong-Dae;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.3
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    • pp.99-104
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    • 2011
  • A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

Regional load deflection rate of multiloop edgewise archwire (Multiloop edgewise arch wire의 부위별 하중변형률)

  • Kim, Byoung-Ho;Yang, Won-Sik
    • The korean journal of orthodontics
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    • v.29 no.6 s.77
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    • pp.673-688
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    • 1999
  • This study was conducted in order to analyze the mechanical characteristics of multiloop edgewise archwire (MEAW). The purposes were 1) to compare load deflection rate (LDR) of MEAW with that of various other arch wires in the individual interbracket span, 2) to compare the wire stiffness in the interbracket span with that in the multi-L-loop region (the span from distal border of the bracket of the lateral incisor to the mesial border of the buccal tube of the second molar), and 3) to verify the experimental results with theoretically derived formula. The single L-loops of five different horizontal lengths and multi-L-loops for the upper and lower arches were made out of .$016\times.022$ permachrome stainless steel wire. Straight segment of plain stainless steel, TMA and NiTi wire of the same dimension were prepared. The LDR was measured using Instron model 4466 with the load cell of 50N capacity at cross head speed of 1.0mm/min, and maximum deflection of 1.0mm. Five specimens were tested under each experimental condition. The wire stiffness number for each interbracket region and multi-L-loop region was calculated from the LDR and the interbracket spans. By dividing the theoretical model of multi-L-loop into 35 linear segments, the energy stored in each segment was obtained. Then the LDR and wire stiffness of single L-loop and multi-L-loop were calculated and compared. The findings were as follows : 1) The average LDR of MEAW in the individual interbracket region was 1/1.53 of that of the NiTi,1/2.47 of TMA and 1/5.16 of the plain stainless steel wire. 2) The wire stiffness of MEAW in the multi-L-loop region was 1.53 times larger than that in the interbracket region, and the LDR was almost twice as large as that of NiTi in that region. 3) According to the theoretically derived equation, the wire stiffness of the single L-loop was lower than that of multi-L-loop. The results of this study suggest that MEAW has the unique mechanical Property which could allow individual tooth movement and transmit elastic force effectively through the entire arch wire.

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Survival and Cross-contamination of Escherichia coli O157:H7 on Various Agricultural Product-Contact Surfaces (농산물 접촉 표면 재질에 따른 Escherichia coli O157:H7의 생존 및 상추로의 교차오염도 조사)

  • Kim, Se-Ri;Choi, Song-Yi;Seo, Min-Kyoung;Kim, Won-Il;Chung, Duck-Hwa;Ryu, Kyoung Yul;Yun, Jong-Chul;Kim, Byung-Seok
    • Journal of Food Hygiene and Safety
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    • v.28 no.3
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    • pp.272-278
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    • 2013
  • To evaluate the effect of surface contaminated with Escherichia coli O157:H7 (E. coli O157:H7) on the microbiological safety of lettuce, this study was conducted to investigate the attachment, biofilm producing, survival, and cross-contamination of E. coli O157:H7 on stainless steel and polyvinyl chloride (PVC). The attachment rate of E. coli O157:H7 on PVC was 10 times higher than that on stainless steel after exposure 1 h in cell suspension. However, there was not a difference between two types of surface after exposure for 6 h and 24h. The biofilm producing of E. coli O157:H7 was TSB > 10% lettuce extracts > 1% lettuce extracts > phosphate buffer. When two kinds of materials were stored at various conditions ($20^{\circ}C$ and $30^{\circ}C$, relative humidity (RH) 43%, 69%, and 100%), the numbers of E. coli O157:H7 at $30^{\circ}C$, RH 43% or RH 69% were reduced by 5.0 log CFU/coupon within 12 h regardless of material type. Conversely, the survival of E. coli O157:H7 at RH 100% was lasted more than 5 days. In addition, the reduction rate of E. coli O157:H7 was decreased in the presence of organic matter. The transfer efficiency of E. coli O157:H7 from the contaminated surface to lettuce was dependent upon the water amount of the surface of lettuce. Especially, the transfer rate of E. coli O157:H7 was increased by 10 times in the presence of water on the lettuce surface. From this study, the retention of E. coli O157:H7 on produce contact surfaces increase the risk cross-contamination of this pathogen to produce. Thus, it is important that the surface in post harvest facility is properly washed and sanitized after working for prevention of cross-contamination from surface.

Prediction of field failure rate using data mining in the Automotive semiconductor (데이터 마이닝 기법을 이용한 차량용 반도체의 불량률 예측 연구)

  • Yun, Gyungsik;Jung, Hee-Won;Park, Seungbum
    • Journal of Technology Innovation
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    • v.26 no.3
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    • pp.37-68
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    • 2018
  • Since the 20th century, automobiles, which are the most common means of transportation, have been evolving as the use of electronic control devices and automotive semiconductors increases dramatically. Automotive semiconductors are a key component in automotive electronic control devices and are used to provide stability, efficiency of fuel use, and stability of operation to consumers. For example, automotive semiconductors include engines control, technologies for managing electric motors, transmission control units, hybrid vehicle control, start/stop systems, electronic motor control, automotive radar and LIDAR, smart head lamps, head-up displays, lane keeping systems. As such, semiconductors are being applied to almost all electronic control devices that make up an automobile, and they are creating more effects than simply combining mechanical devices. Since automotive semiconductors have a high data rate basically, a microprocessor unit is being used instead of a micro control unit. For example, semiconductors based on ARM processors are being used in telematics, audio/video multi-medias and navigation. Automotive semiconductors require characteristics such as high reliability, durability and long-term supply, considering the period of use of the automobile for more than 10 years. The reliability of automotive semiconductors is directly linked to the safety of automobiles. The semiconductor industry uses JEDEC and AEC standards to evaluate the reliability of automotive semiconductors. In addition, the life expectancy of the product is estimated at the early stage of development and at the early stage of mass production by using the reliability test method and results that are presented as standard in the automobile industry. However, there are limitations in predicting the failure rate caused by various parameters such as customer's various conditions of use and usage time. To overcome these limitations, much research has been done in academia and industry. Among them, researches using data mining techniques have been carried out in many semiconductor fields, but application and research on automotive semiconductors have not yet been studied. In this regard, this study investigates the relationship between data generated during semiconductor assembly and package test process by using data mining technique, and uses data mining technique suitable for predicting potential failure rate using customer bad data.

Comparison of Algorithms for Generating Parametric Image of Cerebral Blood Flow Using ${H_2}^{15}O$ PET Positron Emission Tomography (${H_2}^{15}O$ PET을 이용한 뇌혈류 파라메트릭 영상 구성을 위한 알고리즘 비교)

  • Lee, Jae-Sung;Lee, Dong-Soo;Park, Kwang-Suk;Chung, June-Key;Lee, Myung-Chul
    • The Korean Journal of Nuclear Medicine
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    • v.37 no.5
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    • pp.288-300
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    • 2003
  • Purpose: To obtain regional blood flow and tissue-blood partition coefficient with time-activity curves from ${H_2}^{15}O$ PET, fitting of some parameters in the Kety model is conventionally accomplished by nonlinear least squares (NLS) analysis. However, NLS requires considerable compuation time then is impractical for pixel-by-pixel analysis to generate parametric images of these parameters. In this study, we investigated several fast parameter estimation methods for the parametric image generation and compared their statistical reliability and computational efficiency. Materials and Methods: These methods included linear least squres (LLS), linear weighted least squares (LWLS), linear generalized least squares (GLS), linear generalized weighted least squares (GWLS), weighted Integration (WI), and model-based clustering method (CAKS). ${H_2}^{15}O$ dynamic brain PET with Poisson noise component was simulated using numerical Zubal brain phantom. Error and bias in the estimation of rCBF and partition coefficient, and computation time in various noise environments was estimated and compared. In audition, parametric images from ${H_2}^{15}O$ dynamic brain PET data peformed on 16 healthy volunteers under various physiological conditions was compared to examine the utility of these methods for real human data. Results: These fast algorithms produced parametric images with similar image qualify and statistical reliability. When CAKS and LLS methods were used combinedly, computation time was significantly reduced and less than 30 seconds for $128{\times}128{\times}46$ images on Pentium III processor. Conclusion: Parametric images of rCBF and partition coefficient with good statistical properties can be generated with short computation time which is acceptable in clinical situation.

A development of DS/CDMA MODEM architecture and its implementation (DS/CDMA 모뎀 구조와 ASIC Chip Set 개발)

  • 김제우;박종현;김석중;심복태;이홍직
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.6
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    • pp.1210-1230
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    • 1997
  • In this paper, we suggest an architecture of DS/CDMA tranceiver composed of one pilot channel used as reference and multiple traffic channels. The pilot channel-an unmodulated PN code-is used as the reference signal for synchronization of PN code and data demondulation. The coherent demodulation architecture is also exploited for the reverse link as well as for the forward link. Here are the characteristics of the suggested DS/CDMA system. First, we suggest an interlaced quadrature spreading(IQS) method. In this method, the PN coe for I-phase 1st channel is used for Q-phase 2nd channels and the PN code for Q-phase 1st channel is used for I-phase 2nd channel, and so on-which is quite different from the eisting spreading schemes of DS/CDMA systems, such as IS-95 digital CDMA cellular or W-CDMA for PCS. By doing IQS spreading, we can drastically reduce the zero crossing rate of the RF signals. Second, we introduce an adaptive threshold setting for the synchronization of PN code, an initial acquistion method that uses a single PN code generator and reduces the acquistion time by a half compared the existing ones, and exploit the state machines to reduce the reacquistion time Third, various kinds of functions, such as automatic frequency control(AFC), automatic level control(ALC), bit-error-rate(BER) estimator, and spectral shaping for reducing the adjacent channel interference, are introduced to improve the system performance. Fourth, we designed and implemented the DS/CDMA MODEM to be used for variable transmission rate applications-from 16Kbps to 1.024Mbps. We developed and confirmed the DS/CDMA MODEM architecture through mathematical analysis and various kind of simulations. The ASIC design was done using VHDL coding and synthesis. To cope with several different kinds of applications, we developed transmitter and receiver ASICs separately. While a single transmitter or receiver ASC contains three channels (one for the pilot and the others for the traffic channels), by combining several transmitter ASICs, we can expand the number of channels up to 64. The ASICs are now under use for implementing a line-of-sight (LOS) radio equipment.

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