• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.33 no.3B
• /
• pp.91-99
• /
• 2008

In this paper, we design the function of ULSLE(Upper Layer Shared LAN Emulation) to provide both the efficient LAN service and compatibility with 802.1D bridge in Hybrid two-stage AWG based WDM-PON. The ULSLE layer lies above MAC control layer in order to provide a mean to interface WDM-PON and 802.1D bridge. It also performs LAN emulation based on PON-Tag which is only used to decide both the transmission mode and the destination of frames transmitted from ONUs. That is, the PON-Tag is not used for downstream frames but destination address field in original frame instead. This decreases the processing overhead and complexity caused by PON-Tag at OLT and ONU. The verification of designed ULSLE is performed according to the specific scenarios based on transmission mode and destination using OPNET.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.5 s.347
• /
• pp.59-67
• /
• 2006

We demonstrate bidirectional long-reach 35-channel dense wavelength division multiplexing-passive optical network(DWDM-PON) based on wavelength-locked Fabry-Perot laser diodes (F-P LDs). The mode control of F-P LD enhances output power at decreased the required injection power. We show packet-loss-free transmission in all 70 channels at 125 Mb/s per channel line rate through 70 km of single mode fiber without optical amplifier The DWDM-PON can consolidate a metro network into an access network by bypassing the central offices within its reach. The proposed DWDM-PON can accommodate about 80 subscribers with an EDFA-based broadband light source. Further expansion up to 100 subscribers is possible with a semiconductor-based BLS.

• Journal of the Korea Society of Computer and Information
• /
• v.25 no.6
• /
• pp.1-8
• /
• 2020

Communication between system modules is applied using the Modbus protocol in industrial sites including smart factories, industrial drones, building energy management systems, PLCs, ships, trains, and airplanes. The existing Modbus was used for serial communication, but the recent Modbus protocol is used for TCP/IP communication.The Modbus protocol supports RTU, TCP and ASCII, and implements and uses protocols in embedded systems. However, the transmission I/O devices for RTU, TCP, and ASCII-based protocols may differ. For example, RTU and ASCII communications transmit on a serial-based communication protocol, but in some cases, Ethernet TCP/IP transmission is required. In particular, since the C language (object-oriented) is used in embedded systems, the complexity of source code related to I/O registers increases. In this study, we designed software that can logically separate I/O functions from embedded devices, and designed the execution logic of each instance requiring I/O processing through a delegate class instance with Modbus RTU, TCP, and ASCII protocol generation. We designed and experimented with software that can separate communication I/O processing and logical execution logic for each instance.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.8
• /
• pp.52-59
• /
• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.