• Journal of Korean Society of Water and Wastewater
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• v.24 no.2
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• pp.219-230
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• 2010

Computer simulation has been widely used to design and optimize the operation of wastewater treatment plants since 1980. For secondary clarifiers, the simulation has been a tool to optimize the performance by providing dimensions for flocculation well. However, there has been no attempt to find the optimized geometrical parameters in circular secondary clarifier using simulation tools. In this study, three SVIs (Sludge Volume Indexes), two well types (feed and flocculation wells), 8 SWDs (Side Water Depths) and 9 bottom slopes were variables for simulation. Diurnal inflow and associated MLSS (Mixed Liquor Suspended Solid) concentrations were used for input loadings. When flocculation well was installed, 48% less concentration at lowest ESS (Effluent Suspended Solid) concentrations was produced and the diurnal ESS concentration range had been reduced by 52%. From these results, flocculation well must be installed to produce lower and stable ESS from circular secondary clarifiers. Under same loading conditions with $300m{\ell}$/g of SVI, The lowest ESS was produced when SWD was 4.5m with 4% of bottom slope. Therefore, SWD and bottom slope must not be deeper than 4.5m and must be near 4%, respectively, in circular clarifier with flocculation well to produce the lowest ESS concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.636-639
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• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.