• Title/Summary/Keyword: 유효생성열

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Formation of amorphous and crystalline phase, phase sequence by solid state reaction in Zr/Si multilayer thin films (Zr/Si 다층박막에서의 고상반응에 의한 비정질상과 결정상의 생성 및 상전이)

  • Sim, Jae-Yeop;Ji, Eung-Jun;Gwak, Jun-Seop;Choe, Jeong-Dong;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.4 no.5
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    • pp.493-501
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    • 1994
  • DSC와 XRD를 사용하여 Zr/Si 다층박막의 고상반응에 의한 비정질상과 결정상 생성 및 상전이를 확인하고 이를 유효구동력 개념과 유효생성열 개념 및 phase determining factor(PDF)모델을 이용하여 예측한 결과와 비교하였다. Zr/Si 다층박막은 비정질호 반응이 잘 일어났으며 이는 유효구동력 개념으로 예측한 바와 일치하였다. Zr/Si 계에서 생성되는 최초의 결정상은 ZrSi 였으며 유효생성열과 PDF모델로부터 예측된 최초의 결정상은 PDF 모델의 예측 결과와 일치하였다. Zr/Si 다층박막의 원자조성비가 1대 1일경우와 1대 2일 경우의상전이는 ZrSi$\longrightarrow$$ZrSi_{2}$로 되었으며 이러한 상전이 과정은 유효생성열 다이아그램으로 해석되었다. ZrSi의 생성기구는 핵생성이 율속임을 규명하였고 ZrSi와 $ZrSi_{2}$의 생성에 필요한 활성화에너지는 1.64$\pm$0.19eV와 2.28$\pm$0.36eV이었다.

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Formation of amorphous and crystalline phase, phase sequence by solid state reaction in Co/Si multilayer thin films (Co/Si 다층박막에서의 고상반응에 의한 비정질상과 결정상의 생성 및 상전이)

  • Sim, Jae-Yeop;Park, Sang-Uk;Ji, Eung-Jun;Gwak, Jun-Seop;Choe, Jeong-Dong;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.4 no.3
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    • pp.301-311
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    • 1994
  • The growth of amorphous and first crystalline phase, and phase sequence by solid state reaction were examined in Co/Si multilayer thin films by DSC and XRD. The experimental results were compared with the results expected by effective driving force models, PDF and effective heat of formation models.Amorphous phase growth was not observed in Co/Si system and it was consistent with the predicted result by effective driving force. It was observed that the first crystalline phase is CoSi. According to the PDF and effective heat of formation models, the first crystalline phases were CoSi and $CO_2Si$, respectively. The experiemental results were coincident with the PDF model considering structure factors. In case of the atomic concentration ratios of 2Co : 1Si and 1Co : 2Si, the phases sequences were $CoSi\to Co_2Si$ and $CoSi \to Co_2Si \to CoSi \to CoSi_2$, respectively and it was analysized through the effective heat of formation model. The formations of CoSi, $CO_2Si$ and $COSi_2$ in initial stage were controlled by nucleation and the activation energies for the nucleation of three phases were 1.71, 2.34 and 2.79eV.

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Interfacial reactions in Cu/NbTi multilayer thin films and superconducting wires (임게전류밀도 향상을 위한 Cu/NbTi다층박막과 초전도 선재에서의 계면반응)

  • 심재엽;백홍구;하동우;오상수;류강식
    • Electrical & Electronic Materials
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    • v.8 no.4
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    • pp.478-486
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    • 1995
  • Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

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A Thermodynamical Study on the Phase Formation and Sequence by Ion Beam Mixing in Al/Pd System (이온선 혼합에 의한 Al/Pd계의 상형성 및 전이에 관한 열역학적 연구)

  • Choi, Jeong-Dong;Hong, Jin-Seok;Kwak, Joon-Seop;Chi, Eung-Joon;Park, Sang-Wook;Baik, Hong-Koo;Chae, Keun-Hwa;Jung, Sung-Mun;Whang, Chung-Nam
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.209-219
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    • 1993
  • Evaporated Al/Pd thin films were irradiated with various doses to produce intermetallic compounds. In order to study the first phase formation and phase sequence, RBS and TEM studies have been used. It was found that the initial phase formed by irradiation of $5{\times}10^{15}Ar^+/cm^2$ was $Al_3Pd_2$, while $1.5{\times}10^{16}Ar^+/cm^2$ gave the subsequent phase of AlPd. This phenomenon was analysed using effective heat of formation (${\Delta}$H') model. The experimental results agree with that predicted by effective heat of formation model. This model has been extended to predict the first phase formation and phase sequence by ion beam mixing in metal/Si systems as well as metal-metal systems.

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