• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.1
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• pp.74-79
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• 2002

The EM(Engineering Model) VCO(Voltage Controlled Oscillator) is nonlinear designed for LO(Local Oscillator) of Ka-band satellite transponder. The microstripline coupled with dielectric resonator is implemented as a high impedance inverter to improve the phase noise, and the quality factor of resonant circuit can be transferred to active device with the enhanced loaded quality factor. The developed VCO has the oscillating tuning range of 9.7965~9.8032 GHz for the control voltage range of 0~12 V. This VCO requires the DC power of 8 V and 17 mA. The phase noise characteristics are -96.51 dBc/Hz @10 KHz and -116.5 dBc/Hz @100 KHz, respectively. And, the output power of 7.33 dBm is measured.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.79-82
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• 2003

본 논문은 마이크로파발진기의 위상잡음 특성에 영향을 미치는 P-HEMT의 비선형 파라미터를 선정하고, 3개의 비선형 파라미터와 최소 위상잡음을 분석하였다. 분석된 P-HEMT가 저 위상잡음을 가지는 최적의 바이어스 동작점을 선정하여, 선정된 바이어스 동작점에서 두 가지 형태의 발진기를 설계하므로 서 발진기의 물리적 구조에 의한 위상 잡음의 영향을 비교하고 위상잡음의 감소방안을 제시하였으며, 이를 이용하여 ku-대역 위상동기유전체공진 발진기를 설계 제작하였다.

• The Journal of Korean Institute of Information Technology
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• v.17 no.3
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• pp.43-50
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• 2019

In this paper, we propose a S-band oscillator with a reduced electrical size by applying a vertical split ring resonator(VSRR). The VSRR is a type of split ring resonator that operates as a resonator by the capacitance and inductance generated between the microstrip lines arranged on the top and bottom of the dielectric substrate and it has an advantage that the electrical size of the resonance circuit can be reduced as compared with the conventional ring resonator. In this paper, we design a VSRR operating over S-band and an oscillator using the VSRR as the resonant circuit. The proposed oscillator showed the output of 5.9dBm at 2.4HGz and showed the phase noise characteristics of -112.58dBc at 100KHz offset frequency and -117.85dBc at 1MHz offset.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.1
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• pp.68-74
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• 2008

The substrate integrated waveguide (SIW) structure can be approximated as the rectangular waveguide using common dielectric substrate with via-holes. To realize reflection-type resonator, $50-{\omega}$ microstrip line can be used for coupling with the center plane of the cavity. The oscillator is designed to operate at 9.45 GHz using the reflection-type SIW cavity resonator. The phase noise of oscillator shows -98.1dBc/Hz at 100 KHz offset. In experiment, the reflection type SIW cavity resonator improves the loaded quality factor making the low phase noise oscillator possible. Due to the entirely planar structure of this resonator, this technique can also be adequate in oscillator applications for a low cost and low phase noise performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.9
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• pp.813-821
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• 2013

In this paper, a vital signal sensor based on impedance variation of resonator is presented. Proposed vital signal sensor can detect the vital signal, such as respiration and heart-beat signal. System is composed of resonator, oscillator, surface acoustic wave (SAW) filter, and power detector. The cyclical movement of a dielectric such as a human body, causes the impedance variation of resonator within the near-field range. So oscillator's oscillation frequency variation is effected on resonator's resonant frequency. SAW filter's skirt characteristic of frequency response can be transformed a small amount of frequency deviation to a large variation. Aim to enhance the existing sensor detection range, proposed sensor operates in 870 MHz ISM band, and detect respiration and heart-beat signal at distance of 120 mm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.2A
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• pp.122-128
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• 2005

In this paper, a low noise parallel feedback oscillator for harmonic suppression and a frequency doubler are designed and implemented. As the fundamental signal of the oscillator for frequency doubling is extracted between the dielectric resonator (DR) filter and the gate device of the active device, the undesired harmonics at the output of the oscillator is remarkably suppressed. The fundamental signal of the oscillator for frequency doubling directly feeds to the frequency doubler without an additional band pass filter for harmonic suppression. The second harmonic suppression of -47.7 dBc at the oscillator output is achieved, while the fundamental suppression of -37.5 dBc at the doubler output is obtained. The phase noise characteristics are -80.3 dBc/Hz and -93.5 dBc/Hz at the offset frequency of 10 KHz and 100 KHz from the carrier, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.228-231
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• 2001

본 논문에서는 K-band SMDS용 하향변환기를 설계 및 제작하였다. SMDS용 하향변환기는 입력신호 주파수 19.2㎓~20.2㎓에 대한 3단 저잡음 증폭기, 대역통과필터, 18.25㎓의 국부발진기, 및 IF단으로 구성하였고 3단 저잡음 증폭기의 이득은 28dB를 나타내었다. 국부 발진기는 고안정 특성을 위하여 유전체 공진 발진기로 구성하여 주파수 18.25㎓에서 0.5dBm의 출력전력을 나타냈으며, 19.2㎓~20.2㎓의 RF신호를 드레인형 FET믹서에 인가하였을 때 950MHz ~1950MHz 범위에서 변환이득은 5dB를 나타내었다. 본 논문에서 국내 K-band 위성인터넷을 위한 하향변환기의 규격을 만족시킬 수 있었다.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.385-388
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• 2000

In this paper, the Ka-band Dielectric resonator oscillator has been designed and fabricated. The resonator network was simulated using HFSS program. The design method of an oscillator is the small-signal S-parameter design. The Push-push DRO employs a hetero junction FET (NE32484A). The fabricated Push-push DRO shows such characteristics as the phase noise -106 ㏈c/Hz at the 100 ㎑ frequency offset. the output power and fundamental frequency surpression were -6 ㏈m and -29 ㏈c, respectively.