• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.593-596
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• 2017

Sodium titanate nanosheets were prepared by a hydrothermal synthesis method under basic conditions. Ruthenium was introduced on the surface of sodium titanate nanosheets through an UV irradiation in the aqueous $RuCl_3$ solution. The crystal phase and morphology of synthesized samples were analyzed by X-ray diffraction, transmission electron microscopy and energy dispersive spectroscopy. In addition, the content of Ru was evaluated by inductively coupled plasma. It was proposed that a monomeric form of ruthenium was incorporated on the surface of sodium titanate. Ruthenium incorporated sodium titanates were applied to alcohol oxidation using molecular oxygen as an oxidant. The sample with 7% ruthenium showed a catalytic activity with a turnover frequency value of $2.1h^{-1}$ in oxidizing benzyl alcohol to benzaldehyde without any other byproducts at $105^{\circ}C$ and 1 atmosphere.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.266-270
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• 2003

We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.370-378
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• 2017

A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.143-144
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.49-53
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• 2001

Vortical etching experiments of ($SrBi_2Ta_2O_9$)/Si thin films have been performed by using the inductively coupled plasma reactive ion etching (ICP-ME) apparatus. The purposes of these experiments are to get the effective area of vertical surface. Because this technology is very important to get good qualities of ferroelectric gate structure, capacitor and the minimum parasitic effects related to the excellent performances of the FRAM (Ferroelectric Random Access Memory) device. The reacting gases were Ar and $Cl_2$gases, and various $Ar/C1_2$flow ratios were used. The etching experiments were carried out at various RF powers such as 700, 700, 500W and at various DC powers such as 200, 150, 100, 50W, respectively. The maximum etch rate of $SrBi_2Ta_2O_9$/Si thin films was 1050 A/min at the $Ar/C1_2$ gas ratio of 20/16, RF power of 700 W and DC power of 200 W. From the SEM (scanning electron microscopy) image of the SBT thin films, the wall angle was as good as about $82^{\circ}$.

• Journal of Energy Engineering
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• v.7 no.1
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• pp.146-156
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• 1998

Fly ash produced in coal combustion is a fine-grained material consisting mostly of spherical, glassy, and porous particles. A physical, morphological, and chemical characteristic of fly ash has been analyzed. This study may contribute to the data base of domestic fly ash, the improvement of combustion efficiency, ash recycling and ash collection in the electrostatic precipitator. The physical property of fly ash is determined using a particle counter for the measurement of ash size distribution and gravimeter. Morphological characteristic of fly ash is performed using a scanning electron micrograph and an optical microscope. The chemical components of fly ash are determined using an inductively coupled plasma emission spectrometry (ICP). The distribution of fly ash size was ranged from 15 to 25 $\mu$m in mass median diameter. Exposure conditions of flue gas temperature and duration within the combustion zone of the boiler played an important role on the morphological properties of the fly ash such as shape, relative opacity, coloration, cenosphere and plerosphere. The spherical fly ash might be generated at the condition of complete combustion. The size of fly ash was found to be increased the with particle-particle interaction of agglomeration and coagulation. Fly ash consisted of $SiO_2\;Al_2O_3\;and\;Fe_2O_3$ with 85% and carbon with 3~10% of total mass.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.40 no.2
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• pp.203-214
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• 2014

We measured the contact dermatitis-causing substances concentrations in 28 commercial oxidative hair-coloring products. This study was aimed to provide the fundamental data about oxidative hair-coloring products. We selected 10 oxidation dyes (p-phenylenediamine, toluene-2,5-diamine, m-phenylenediamine, nitro-p-phenylenediamine, p-aminophenol, m-aminophenol, o-aminophenol, p-methylaminophenol, N,N'-bis(2-hydroxyethyl)-p-phenylenediamine sulfate, 2-methyl-5-hydroxyethylaminophenol) and 4 heavy metal (nikel; Ni, chromium; Cr, cobalt; Co, copper; Cu) as contact dermatitis-causing substances. To identify 10 oxidation dyes, hexane-2% sodium sulfite was used for the rapid and simple extraction and ultra performance liquid chromatography (UPLC) analysis was used for simultaneous analysis in 12 minutes. 10 oxidative dyes were detected as indicated on the product packaging and each concentration was lower than prescribed upper concentration limit by pharmaceutical manufacturing standards. And we analysed inductively coupled plasma-optical emission spectrophotometer (ICP-OES) for content search of heavy metal after microwave digestion. The heavy metal average concentration in oxidative hair-coloring products was 0.572 ${\mu}g/g$ for Ni, 3.161 ${\mu}g/g$ for Cr, 2.029 ${\mu}g/g$ for Co, 0.420 ${\mu}g/g$ for Cu, respectively. The average of concentration in powder type (henna) was higher than those of other foam and cream type oxidative hair-coloring products as follows; 1.800 ${\mu}g/g$ for Ni, 10.127 ${\mu}g/g$ for Cr, 7.082 ${\mu}g/g$ for Co, 1.451 ${\mu}g/g$ for Cu. Hair coloring products were classified into the six colors - black, dark brown, brown, dark brown, light brown, red brown and analyzed. Brown color had the highest average concentration of Co and the others had the highest average concentration of Cr.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.161-165
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• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

• Journal of Food Hygiene and Safety
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• v.26 no.4
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• pp.322-329
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• 2011

This study was done to analyze the contents of minerals and vitamins to compare the measured values of minerals, vitamins with labeled values of them in food labeling and to investigate the ratio of measured values to labeled values in 437 specimen with minerals and vitamins - fortified commercial beverages and liquid teas. Content of calcium and sodium in samples after microwave digestion was analyzed with an ICP-OES (Inductively Coupled Plasma Optical Emission Spectrometer) and vitamins were determined using by HPLC (High Performance Liquid Chromatography). The measured values of calcium were ranged 80.3~142.6% of the labeled values in 21 samples composed calcium - fortified commercial beverages and liquid teas. In case of sodium, measured values were investigated 33.9~48.5% of the labeled values in 21 sports beverages. The measured values of vitamin C, vitamin $B_2$ and niacin were ranged 99.7~2003.6, 81.1~336.7, 90.7~393.2% of the labeled values in vitamins - fortified commercial beverages and liquid teas, 57, 12, 11 samples. To support achievement of the accurate nutrition label, there must be program and initiatives for better understanding and guidances on food labelling and nutrition for food manufacture.